CMOS Devices Developed by Novel Hot Wire Implantation Doping Technology

Abstract

As the MOSFET devices have been scaling down short channel effects become serious problems for traditional bulk MOSFETs As the result alternative MOSFET structure has been proposed Shallow doping profiles is a solution Shallow doping profiles in drain and source and reducing implantation damage are the most popular methods to suppress short channel effect In lots of research HWCVD doping system was a choice we applied to reach the object In this thesis the P and N MOSFET devices on bulk-Si with HWCVD assistant ICP doping system were investigated and the characteristic and the reliability of device with various dopant wire temperature were discussed Silicon-on-insulator was used to test reliability in this work It is observed that the drain current threshold voltage and off-state leakage current would be affected due to the difference of doping depth The n-MOSFET and p-MOSFET device with 1800℃and 1650℃ catalysts temperature has batter characteristic such as lower leakage current and subthreshold swing Eventually we combined the p and n MOSFET to fabricate a Complementary Metal-Oxide-Semiconductor (CMOS) device

Date of Award	2015 Dec 23
Original language	English
Supervisor	Shoou-Jinn Chang (Supervisor)