Effect of Titanium Dioxide Buffer Layer on Organic Perovskite Resistive Random Access Memory

Abstract

In this study titanium dioxide were prepared by magnetron sputtering deposition technology with different argon-oxygen ratios Because titanium dioxide has light-induced hydrophilicity the substrate is illuminated by UV-radiation prior to the growth of CH3NH3PbI3 organic perovskite film by spin coating(two-step method) Titanium dioxide prepared by different argon to oxygen ratios was used as a substrate The UV light irradiation influenced the wetability of the substrates altering the subsequently grain growth of the CH3NH3PbI3 perovskite film Furthermore the oxygen vacancy content of titanium dioxide was associated with the argon/oxygen ratio that also related to the I-V hysteresis of organic perovskite solar cells Therefore we use titanium dioxide films that were prepared by different argon/oxygen ratio as the substrate for the growth of the CH3NH3PbI3 organic perovskite films Organic perovskite resistive random access memory (RRAM) devices were fabricated and the carrier transport behavior was discussed

Date of Award	2019
Original language	English
Supervisor	Chuan-Feng Shih (Supervisor)