Electrical Properties of Graphene on β phase silicon nitride

Abstract

Abstract Graphene is a rising star in both science and technology due to its unique electronic thermal and mechanical properties However graphene family is generally supported on silicon dioxide substrates; strong impurity scatterings at the interface obscure the study of the fundamental physics in graphene systems Although suspending graphene and boron nitride [BN] as the substrate lead to a substantial improvement these methods are unsuitable for massive production and thus their implications are severely limited In principle epitaxial monocrystalline β-silicon nitride [β-Si3N4] substrates match graphene lattice which reduce interfacial strain like graphene/BN devices and exhibit higher-κ dielectric constant than that on BN substrates Graphene family on epitaxial β-Si3N4/Si substrates may be a promising structure in 2D-material integrated circuits on wafer scale Here we demonstrate the carrier mobility of single-layer graphene/β-Si3N4 devices is higher than 5000 cm^2?(v s) before using the annealing process In our experimental result we report on the characterization of magnetotransport measurements in the graphene’s devices

Date of Award	2015 Aug 10
Original language	English
Supervisor	Tse-Ming Chen (Supervisor)