Epitaxial growth of Boron Nitride thin film on Si and Graphite substrates

Abstract

Hexagonal boron nitride (h-BN) has excellent physical properties and chemical stability with many applications in 2D materials In recent study h-BN has grown on metals have to transfer to desirable substrate resulting in small size and defect Here we use two kinds of substrate which are graphite and silicon In traditional semiconductor process silicon is the most commonly used substrate We demonstrate growth of h-BN directly on Si substrate but silicon and h-BN has large lattice mismatch Therefore we demonstrate growth of h-BN on graphite because graphite and h-BN has low lattice mismatch Using the experience and conditions of growth on the graphite substrate grows h-BN on silicon substrate We investigate h-BN film by AFM SEM TEM Raman RHEED and XPS after growth

Date of Award	2020
Original language	English
Supervisor	Chung-Lin Wu (Supervisor)