Fabrication of CdSe Quantum Dot Sensitized Solar Cells with Photoelectrodes Prepared Using Potential-Induced Adsorption

Abstract

Successive ionic layer adsorption and reaction (SILAR) technique has been commonly adopted to fabricate quantum-dot-sensitized solar cells (QDSSCs) However pore blocking and poor distribution of quantum dots (QDs) in TiO2 matrices are still problems need to be solved A potential-induced adsorption (PA) of photoelectrodes was introduced to improve the deposition of cadmium selenide (CdSe) QDs and the performance of QDSSCs The QDs deposited photoelectrode was characterized by energy dispersive spectrometer (EDS) in scanning electron microscope (SEM) The experimental results show that the PA greatly enhanced the ion adsorption resulting in a higher amount of cadmium ions on the film surface for the following reaction with selenide precursors In addition TiO2 scattering layer was used to increase the light-trapping capabilities A comparison of photoelectrodes with 4+4 μm TiO2 films and 8+4 μm TiO2 films was carried out to inspect the effects of the layers The results show that both the efficiencies of the cell with the two different photoelectrodes increase with increasing SILAR cycles of CdSe However 8+4 μm TiO2 photoelectrodes have larger capacity to load more QDs while 4+4 μm TiO2 films performed better than those with 8+4 μm TiO2 films under small amount of CdSe QDs A maximum efficiency of 4 82% was achieved by using PA improved co-sensitization of CdS/CdSe on 8+4 μm TiO2 photoelectrode

Date of Award	2015 Aug 11
Original language	English
Supervisor	Yuh-Lang Lee (Supervisor)