GF(4) Polar Codes for MLC NAND Flash Memories

Abstract

Due to the process of technology scaling down the storage density of the memories increases progressively However the storage data is affected more easily by noise at the same time That effect results in the data reliability reduced Hence adding powerful error correction codes (ECCs) is inevitable In this work we study the current ECC polar codes which get researchers’ attention Moreover we propose a novel idea that is the application of the quaternary Galois field (GF(4)) polar codes to the multi-level cell (MLC) NAND flash memories Under the mechanism of the MLC NAND flash model，We first observe that the simulation results of the GF(4) polar codes with the 4-level pulse-amplitude modulation (PAM4) are better than the GF(2) at the high signal-to-noise ratio(SNR) Therefore our proposed method can reduce the bit error rate (BER) and improve the reliability of MLC NAND flash memories

Date of Award	2020
Original language	English
Supervisor	Chih-Hung Kuo (Supervisor)