Graphene on silicon nitride dielectrics

Abstract

Graphene is a one-atom-thick honeycomb lattice which is composed of carbon atoms discovered by A K Giem and his team in 2004 However graphene on standard silicon dioxide substrates are facing a bottleneck due to the poor quality of this kind of devices Fortunately the quality has been greatly improved by putting graphene on boron nitride substrates but the way of fabricating such a device is too hard for massive production Here we provide another but easier way to achieve such high quality devices The new way to improve the quality of graphene devices is to put graphene on silicon nitride substrates which is predicted to enhance the quality greatly So far my work is using mechanical exfoliation method to place graphene on the new substrate “silicon nitride” in which the thickness is 60 nm and try to make a graphene-based electrical devices In this thesis I present how to fabricate such a device and show that graphene is visible on 60-nm-thick silicon nitride substrates under observation of optical microscope

Date of Award	2015 Jul 31
Original language	English
Supervisor	Tse-Ming Chen (Supervisor)