Improving optical performance of InGaN/GaN multiple quantum wells based light-emitting diodes

Abstract

This research is focused on light emission efficiency enhancement of InGaN/GaN multiple quantum wells(MQWs) based ultraviolet(UV) blue(B) and green(G) light-emitting diodes (LEDs) which were grown by metalorganic chemical vapor deposition The major scope is to increase the optical performance including: (1) reduction of dislocations by tuning total working pressure to modify the morphology during the buffer layer growth in UV LEDs (2) elimination of the V-defects by changing the temperature of growing GaN capping layer in B LEDs (3) fabrication of the more uniform and smaller embedded quantum dots in InGaN QWs by changing working pressure during the InGaN QWs layers growth in G LEDs The achievements proposed in this research provide effective schemes to improve the light output power for the InGaN/GaN MQWs based LEDs

Date of Award	2017 Jan 17
Original language	English
Supervisor	Chuan-Pu Liu (Supervisor)