Investigation of the ITO/CuInSe2 Nanorod Solar Cells

Abstract

In this research the pulsed three-electrode plating method is used to fabricate the CuInSe2 (CISe) nanorods through anodic aluminum oxide (AAO) template After template removing CISe nanorods are used as the absorption layer Using the DC-sputtering method is used to deposit the indium tin oxide (ITO) thin film with high transmittance and good conductivity on the CISe nanorods Compared with the planar structure nanorod structure has the advantages of high anti-reflection capability and more light absorption area Therefore it is expected that the nanorod structure has good photoelectric conversion capability which can be applied to optoelectronic devices inclusive of the solar cell photodetector and image sensor This research adopts the top-down structure of ITO thin film CISe nanorod and p-type heavily doped silicon substrate to form the P-N junction diode with rectifying characteristics With the optimal parameters of each layer the electrical characteristics of the nanorod photoelectric element is the rectification of the diode with the forward current density 5 67 mA/cm2、the reverse current density -0 26 mA/cm2 and the on/off ratio is 21 8 times Applied to the solar cell the short circuit current density is 0 082 mA/cm2 the open circuit voltage is 0 75 volt the fill factor is 0 519 and the photoelectric conversion efficiency is 0 0319%

Date of Award	2020
Original language	English
Supervisor	Mau-phon Houng (Supervisor)