In this study we change the metal interconnection layer (Ti Cu and Ag) of AlN-based complementary resistive switches (CRS) and we find that the devicesused Ag as the interconnection layer can effectively increase the endurance up to 500 times and have the lowest operating voltage In addition the characteristics of CRS with different orientation AlN films and the switching mechanism are also investigated in this thesis It is found that the mechanism in the low resistance state (LRS) exhibits an ohmic conduction behavior with a slope of 1 00 However the conduction mechanism in the high resistance state (HRS) is totally different from the one in LRS The charge transport behavior completely conforms to a typical space charge limited current (SCLC)
| Date of Award | 2019 |
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| Original language | English |
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| Supervisor | Sheng-Yuan Chu (Supervisor) |
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Investigations of the Effects and Mechanisms of Metal Interconnection Layer and Orientation of AlN-based Complementary Resistive Switches
培豪, 洪. (Author). 2019
Student thesis: Doctoral Thesis