Magnetic and Electrical Properties of Cr and Sb Doped Bi2Se3 Topological Insulator

Abstract

Sb doped and Cr doped Bi2Se3 topological insulators have been established on sapphire (0001) substrate by molecular beam epitaxy (MBE) Structural characterization and electrical properties were verified by in-situ reflection high energy electron diffraction (RHEED) ex-situ atomic force microscopy (AFM) X-ray diffraction (XRD) and carrier density measurements The real concentration of each element in our sample were verified by X-ray photoelectron spectroscopy (XPS) and the band structure of samples were revealed by angle-resolved photoemission spectroscopies (ARPES) The weak-anti localization (WAL) and weak localization (WL) performance were investigated in Sb doped Bi2Se3 and Cr-doped Bi2Se3 through the magnetoconductivity Further increase Sb doping with Cr-doping fixed would enhance WL behavior in Sb Cr co-doped Bi2Se3 In addition the curie temperature of Cr-doped Bi2Se3 was observed by the exchanging performance of magnetoconductivity with the altering measured temperature

Date of Award	2016 Aug 17
Original language	English
Supervisor	Jung-Chun Huang (Supervisor)