Quantum Transport Modeling for Nanoscale FET with Non-Equilibrium Green’s Function Formalism

  • 謝 宇峰

Student thesis: Master's Thesis


As complementary metal–oxide–semiconductor (CMOS) technology progresses device dimensions have been scaled into the nanometer regime The electronic devices would show more pronounced wave characteristics of carriers when operating The non-equilibrium Green’s function (NEGF) approach which is a powerful conceptual tool and a practical analysis method to treat nanoscale electronic devices with quantum mechanical At the start of this thesis we calculated the band structure based on the tight-binding theory The calculations of band structure used to extract band gap longitudinal and transverse effective electron masses Then we explore the impact of the parameter of confinement modulated on double-gate (DG) MOSFET by explicitly incorporating the quantum confinement effects in the band structure calculations using the tight-binding theory Using the nanoMOS 4 0 simulator we calculate the drain current in DG MOSFET using the quantum ballistic transport model At last we choice the tunneling barrier junction (TBJ) MOSFET structure in order to suppress the short channel effects (SCE) To further enhance the TBJ MOSFET performance we try to use single barrier structure The single barrier at source structure which still have ability of SCE suppression and have higher drive current than TBJ MOSFET
Date of Award2017 Jun 23
Original languageEnglish
SupervisorKuo-Hsing Kao (Supervisor)

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