Amorphous ZrCeOx thin films were prepared by sol-gel method and the resistive switching (RS) properties of sol-gel derived Al/ZrCeOx/ITO devices were investigated The influences of annealing temperature film thickness and top electrode on the RS properties were also discussed It is found that the 2 layered thin film annealed at 400 ℃ can operate up to 643 times In addition as the number of coating layers increases the repeatability of the components becomes more stable However On/Off ratio and retention times were not affected by the number of coating layers or with/without annealing The On/Off ratio values are all in between 101 and 102 and the retention times are up to 104 seconds The reason for the large increase in the number of operations after annealing is likely attributed to the diffusion of In ions from ITO substrate to ZrCeOx film and the increased oxygen vacancies which would allow the discontinuous ions to fit into the connecting process of the formation of filaments In addition the conduction mechanism could be classified into ohmic conduction in the low resistance state and space-charge-limited current conduction mechanism in the high resistance state
Research of Sol-Gel Derived ZrCeOx Thin Films for RRAM Applications
祐紳, 吳. (Author). 2020
Student thesis: Doctoral Thesis