Study of a fullerene derivative for use in pentacene-based thin-film transistor-type memory devices

Abstract

Thin-film transistor-type organic memory devices have high potential for applications in wearable devices or unmanned vehicles that feature low power consumption and detection ability In this study thin-film transistor-type pentacene-based memory devices were fabricated [6 6]-phenyl-C61-butyric acid methyl ester (PCBM) was used to modify the polyimide (PI) dielectric layer The role of PCBM in the electrical performance of pentacene-based memory devices was also investigated Three kinds of solution-processing dielectric layers of memory devices including the single PI layer (Device A) the PI:PCBM blending layer (Device B) and the PI/PCBM bilayer (Device C) were prepared Device A showed a low programming threshold voltage of 0 1 V Device B performed a small subthreshold swing (s s ) of 0 16 V/dec a memory window (VM) of 0 49 V and a low threshold voltage Device C presented a small s s of 0 19 V/dec and a large VM of 0 89 V Experimental results indicated that the PCBM-modified PI dielectric layer could increase the memory window of pentacene-based memory devices The charge erasing capability of Devices B and C could be achieved by laser irradiation without bias voltage which is beneficial for the decrease in the device’s power consumption

Date of Award	2019
Original language	English
Supervisor	Horng-Long Cheng (Supervisor)