Study of Optoelectronic Properties for AlxGa1-xN/AlyGa1-yN-MQW in Different Chip-Size of Deep Ultraviolet Micro-Light-Emitting Diodes

Abstract

The most commonly sold deep ultraviolet light-emitting diode components on the market today are mainly large-sized components but large-sized components have high current density when injected into the vicinity of the electrode area especially when This effect becomes more obvious as the component size becomes larger and larger We call this effect the current crowding effect The current crowding effect will cause uneven current distribution of the traditional large-size light-emitting diodes and the obvious thermal effect of the component will also indirectly cause high The luminous efficiency of the device decreases during the injection; in order to improve the current crowding effect we have adopted the miniaturization of the device size and explored its optoelectronic characteristics and its advantages and disadvantages with different sizes of 100 μm 80 μm 60 μm 40 μm and 20 μm devices When the element size is reduced the polarization field is reduced and the critical voltage is reduced due to the stress release of the small-sized element under the same current density The disadvantage is that the chemical bonding of the side wall gallium nitride by ICP when we make light-emitting diode elements The leakage path caused by broken keys is therefore non-radiative when the component size is reduced The combined effects of the more serious because when the side walls downsized higher occupancy ratio of the light emitting area of the edge effect caused by the more significant element which is miniaturized biggest drawback

Date of Award	2020
Original language	English
Supervisor	Wei-Chi Lai (Supervisor)