Strain plays a crucial role when it comes to perovskite thin film Physical properties were formed because of the symmetric structure The relation between the center atom and the corner atom is the key to how the film exhibit Majority of the strain comes from the lattice mismatch between the film and the substrate SrRuO3 is a ferromagnetic material with TC~150K and it could vary as the strain changes The research on strain effect was done by combining different substrate which leads to different mismatch in lattice constant in order to generate different degrees of strain However this method couldn’t fully release the strain In this case we applied a procedure to manufacture freestanding SrRuO3 thin film By introducing a La0 7Sr0 3MnO3 as a sacrificial layer between the SrRuO3 film and the SrTiO3 substrate We were able to create a freestanding film by etching the La0 7Sr0 3MnO3 layer Which gives access to the characteristics of freestanding SrRuO3 thin film
Date of Award | 2019 |
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Original language | English |
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Supervisor | Jan-Chi Yang (Supervisor) |
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Synthesis and characteristics of freestanding SrRuO3 thin films
耀文, 張. (Author). 2019
Student thesis: Doctoral Thesis