TCAD Simulation-Based Comparative Study on Gate-All-Around Bulk and SOI FinFETs

  • 紀 昕妤

Student thesis: Master's Thesis

Abstract

The MOSFET has been the mainstream of the integrated circuit industry for decades As the demands for faster and smaller devices are still growing the transistors are shrinking toward the physical limitation The short channel effect becomes dominating The MOSFET has evolved from the planar structure to the three-dimensional structure In this thesis bulk FinFETs silicon on insulator (SOI) FinFETs and gate-all-around (GAA) MOSFETs are comprehensively analyzed based on TCAD simulation The punch-through stopper is applied for the bulk FinFET to suppress the leakage current Benchmarks of the current-voltage characteristics and intrinsic delays are provided We found that the bulk FinFET provides similar characteristics as SOI FinFETs and however the bulk wafers are at lower cost than the SOI wafers Inverter and NAND gate are the basic elements for the logic circuits Bulk FinFETs SOI FinFETs and GAA MOSFETs for building these two kinds of basic logical gates are assessed using TCAD mixed-mode simulation The bulk FinFET still has its advantage such as higher wafer area usage and faster logic gate speed With the stable mature manufacturing technology and good characteristics the bulk FinFETs will still play an important role in the future
Date of Award2017 Aug 17
Original languageEnglish
SupervisorMeng-Hsueh Chiang (Supervisor)

Cite this

TCAD Simulation-Based Comparative Study on Gate-All-Around Bulk and SOI FinFETs
昕妤, 紀. (Author). 2017 Aug 17

Student thesis: Master's Thesis