Presented is an investigation into the influence of various flow rates on flow features within a MOCVD (Metal-Organic Chemical Vapor Deposition) reactor Two most commonly used reactors designs are introduced with one of these generally regarded as an aggregate of a horizontal reactor Based on this we employ a simple test reactor geometry commonly used for MOCVD research and develop simulation models for the modelling of the flow and chemical reaction process within A variety of solvers are investigated for the given governing equations including two different non-linear solvers with the methods and efficiency of these solvers discussed in brief detail The outcome of the simulations demonstrate that the flowrate of type III and type V gas flows through the reactor plays a key role in the location of the production of the target molecule for deposition (based on TMGA-type MOCVD) and where flow speeds are too high the rate of reaction is low enough that the uniformity on the wafer is impacted
Date of Award | 2015 Aug 5 |
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Original language | English |
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Supervisor | Matt-Hew Smith (Supervisor) |
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The Influence of Various Flow Rates on Flow Features in MOCVD Reactor
哲允, 鍾. (Author). 2015 Aug 5
Student thesis: Master's Thesis