The study of photoelectrochemical water splitting using GaN p-n junction as the photoanode

Abstract

The pn junction was adopted on the GaN photoanode the extension of the depletion region is beneficial to the charge separation However the GaN photoanodes are easily corroded and hence the pn junction will disappear We deposited a NiO thin film on the GaN photoanodes as the anti-corrosion layer The NiO film is highly transparent and has a sufficiently low charge transfer resistance The pn-GaN/NiO photoanode has an excellent stability and it can drive the water splitting reaction under the AM1 5 G illumination without any external bias This is attributed to the catalytic effect of the NiO film and the modified flat band potential of the pn-GaN photoanode

Date of Award	2019
Original language	English
Supervisor	Jinn-Kong Sheu (Supervisor)