The study of photoelectrochemical water splitting using n-GaN with sol-gel coated NiOX & CoOX thin film as working electrode

Abstract

In this experiment we used nickel oxide (NiOX) and cobalt oxide (CoOX) to cover n-type gallium nitride (n-GaN) to reduce surface corrosion of gallium nitride (GaN) semiconductors and electrolytes during long-term measurements Nickel (Ni) and cobalt (Co) powders were used as precursors in the experiments The precursor is synthesized synthetically Finally the spin coating method was uniformly applied to the surface of gallium nitride (GaN) and the surface oxide characteristics were analyzed by using different annealing temperatures It is observed by the photoelectrochemical system that nickel oxide (NiOX) has a catalytic action so that holes can be introduced into the electrolyte more quickly and gallium nitride covering nickel oxide (NiOX) is used for a long period of time with less corrosion The photocurrent of cobalt oxide (CoOX) is lower than that of gallium nitride (GaN) It is speculated that the thickness of the cobalt oxide film is too thick thereby hindering carrier transport and low photocurrent

Date of Award	2019
Original language	English
Supervisor	Jinn-Kong Sheu (Supervisor)