Thermoeletric Properties of In-doped ZnS Nanowires

Abstract

In our work we study the thermoelectric properties of ZnS one-dimensional (1-D) material However ZnS does not perform well due to extremely high resistivity To solve the resistivity issue we doped metal element such as indium to ZnS In order to investigate the difference before and after doping we use scanning electron microscopy and transmission electron microscope to examine the morphology and the crystallinity of the undoped and doped 1-D ZnS Furthermore photoluminescence of nanostructured ZnS is interesting especially doped ZnS in the nano-structure We found that the In-doped ZnS exhibits red-shift in which peak of PL spectrum under 325-nm laser and the wavelength of which peak of the doped ZnS increases with In concentration To understand the thermoelectrical and electrical properties we fabricated the device based on single 1-D material In our work it is found that although the Seebeck coefficient of the undoped ZnS is higher than that of the In-doped ZnS the resistivity of the In-doped ZnS is extremely low due to doping effect Therefore for the doped ZnS material the decrease in the resistivity is truly more dominant than the low in the Seebeck coefficient leading to the power factor which can evaluate the efficiency of thermoelectrical material higher than the undoped ZnS In this study we explore the ZnS material to be utilized in thermoelectricity and apply doping effect to ZnS in order to enhance the thermoelectrical performance

Date of Award	2016 Aug 25
Original language	English
Supervisor	Chuan-Pu Liu (Supervisor)