Ultraviolet polarization emission from individual horizontal n-ZnO MR/p-GaN LED with whispering-gallery-mode oscillation

  • 林 凱祥

Student thesis: Master's Thesis

Abstract

Zinc oxide has wide direct band gap (3 37eV) and large exciton binding energy (60 meV) and also a similar crystallography with GaN which makes it a promising material for light emitting diode (LED) and laser diode (LD) ZnO microrod has well hexagonal shape which can confine light inside by totally reflectivity and perform whispery-gallery-mode (WGM) lasing WGM cavity provides a low loss that makes it has lower Q factor than traditional lasers Here a horizontal n-ZnO microrod/ p-GaN thin film LED were produced in a simple fabrication process The WGM emission and optical anisotropic properties of individual microrod-based LEDs were studied The electroluminescence spectra of LED show a dominate peak at 380 nm with partially polarization behavior and WGM oscillation at low injection current which has shown great potential for ZnO microrod base laser diode
Date of Award2015 Aug 10
Original languageEnglish
SupervisorHsu-Cheng Hsu (Supervisor)

Cite this

Ultraviolet polarization emission from individual horizontal n-ZnO MR/p-GaN LED with whispering-gallery-mode oscillation
凱祥, 林. (Author). 2015 Aug 10

Student thesis: Master's Thesis