跳至主導覽
跳至搜尋
跳過主要內容
國立成功大學 首頁
English
中文
首頁
概要
研究單位
研究成果
專案
學生論文
設備
獎項
活動
按專業知識、姓名或所屬機構搜尋
光電科學與工程學系
國立成功大學
理學院
電話
886-6-2757575 Ext. 63905
電子郵件
[email protected]
網站
https://dps.ncku.edu.tw
Postal address
在地圖上顯示
概覽
指紋
網路
概要
(24)
專案
(360)
研究成果
(2911)
學生論文
(383)
指紋
查看啟用 光電科學與工程學系 的研究主題。這些主題標籤來自此機構會員的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Material Science
Aluminum
13%
Aluminum Nitride
9%
Aluminum Oxide
11%
Annealing
17%
Anode
6%
Antenna
6%
Atomic Force Microscopy
5%
Buffer Layer
11%
Capacitance
5%
Carrier Concentration
5%
Cathode
10%
Chemical Vapor Deposition
9%
Cholesteric Liquid Crystals
12%
Composite Material
9%
Contact Resistance
8%
Density
26%
Dielectric Material
28%
Doping (Additives)
7%
Dye-Sensitized Solar Cell
9%
Electrical Resistivity
6%
Electroluminescence
11%
Electron Mobility
19%
Electronic Circuit
12%
Epitaxial Film
7%
Field Effect Transistor
8%
Film
100%
Finite Difference Method
7%
Fullerene
5%
Gallium
6%
Gallium Arsenide
17%
Gallium Nitride
10%
Gas Sensor
6%
Gold Nanoparticles
6%
Graphene
7%
Halide
7%
Heterojunction
24%
Indium
9%
Indium Tin Oxide
25%
Light-Emitting Diode
88%
Liquid Crystal
29%
Lithography
15%
Luminescence
5%
Metal Nanoparticle
7%
Metal Oxide
18%
Metamaterial
12%
Molecular Beam Epitaxy
5%
Monolayer
6%
Nanofiber
5%
Nanoparticle
34%
Nanorod
23%
Nanostructure
22%
Nanowire
15%
Nitride Compound
15%
Optical Device
6%
Optical Property
21%
Organic Field Effect Transistors
8%
Organic Solar Cells
7%
Oxide Compound
24%
Oxide Film
11%
Oxide Semiconductor
14%
Perovskite Solar Cell
23%
Photoluminescence
33%
Photosensor
26%
Photovoltaics
13%
Polyimide
6%
Polymer Solar Cell
6%
Polystyrene
5%
Quantum Dot
15%
Quantum Well
13%
Raman Spectroscopy
6%
Refractive Index
12%
Resonator
11%
Sapphire
15%
Scanning Electron Microscopy
7%
Schottky Barrier
13%
Semiconductor Laser
10%
Silicon
10%
Silicon Dioxide
5%
Silver Nanoparticle
6%
Solar Cell
24%
Superlattice
7%
Surface (Surface Science)
68%
Surface Plasmon
23%
Surface Plasmon Resonance
8%
Surface-Enhanced Raman Spectroscopy
9%
Thermal Stability
5%
Thin Films
33%
Thin-Film Transistor
23%
Titanium Dioxide
12%
Transistor
26%
Waveguide
22%
X-Ray Diffraction
9%
Zinc Oxide
19%
ZnO
65%
Engineering
Active Layer
7%
Band Gap
7%
Barrier Height
5%
Buffer Layer
7%
Cap Layer
7%
Chemical Vapor Deposition
9%
Conversion Efficiency
7%
Current Injection
5%
Dielectric Layer
5%
Dielectrics
8%
Electric Field
8%
Engineering
5%
Epitaxial Film
5%
Experimental Result
9%
Field-Effect Transistor
7%
Gallium Arsenide
12%
Heterojunctions
13%
Indium-Tin-Oxide
12%
Light-Emitting Diode
57%
Liquid Crystal
20%
Low-Temperature
15%
Magnetron
5%
Metal Oxide Semiconductor
12%
Nanomaterial
10%
Nanoparticle
13%
Nanorod
11%
Nanowire
7%
Nitride
20%
Ohmic Contacts
11%
Output Power
10%
Oxide Film
6%
Oxide Layer
5%
Passivation
5%
Performance Improvement
6%
Perovskite Solar Cells
9%
Photodetector
5%
Photometer
21%
Photonics
8%
Photovoltaics
5%
Plasmonics
14%
Power Conversion Efficiency
7%
Quantum Dot
7%
Quantum Well
17%
Raman Spectra
5%
Ray Diffraction
5%
Ray Photoelectron Spectroscopy
5%
Resonator
7%
Responsivity
6%
Room Temperature
11%
Sapphire Substrate
9%
Schottky Barrier
10%
Silicon Dioxide
6%
Solar Cell
11%
Superlattice
7%
Surface Plasmon
17%
Surface State
5%
Terahertz
18%
Thin Films
17%
Thin-Film Transistor
9%
Two Dimensional
6%
Ultraviolet Light
5%
Vapor Deposition
8%
Waveguide
11%
Keyphrases
AlGaN-GaN
8%
Aluminum Gallium Nitride (AlGaN)
6%
Annealing
5%
Gallium Arsenide
6%
Gallium Nitride
5%
GaN Layers
6%
GaN-based
9%
GaN-based Light-emitting Diodes
8%
Indium Gallium Nitride (InGaN)
19%
Indium Tin Oxide
6%
Light-emitting Diodes
21%
Low Temperature
8%
MOS-HEMT
5%
Multiple Quantum Wells
8%
N-GaN
5%
Nitrides
10%
Ohmic Contact
6%
Optical Properties
6%
P-GaN
7%
Photodetector
5%
Power Output
7%
Room Temperature
5%
Subwavelength
5%
Surface Plasmon
5%
Terahertz
7%
UV Photodetector
6%