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奈米積體電路工程博士學位學程
國立成功大學
電機資訊學院
電話
886-6-2757575 Ext. 62303
電子郵件
[email protected]
網站
https://nice.ncku.edu.tw
Postal address
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概要
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研究成果
(125)
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查看啟用 奈米積體電路工程博士學位學程 的研究主題。這些主題標籤來自此機構會員的作品。共同形成了獨特的指紋。
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重量
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Engineering & Materials Science
Aluminum oxide
18%
Annealing
14%
Bandpass filters
10%
Buffer layers
22%
Camphor
10%
Capacitors
21%
Carrier concentration
14%
Chemical analysis
10%
Circuit simulation
12%
Computer simulation
15%
Conduction bands
14%
Conversion efficiency
13%
Cryogenics
9%
Crystal structure
10%
Data storage equipment
29%
Defects
20%
Demonstrations
9%
Dielectric properties
40%
Distributed Bragg reflectors
10%
Doping (additives)
83%
Electric potential
39%
Electric properties
18%
Electron mobility
10%
Electronic states
10%
Electrons
10%
Energy gap
16%
Entropy
9%
Epitaxial growth
14%
Field effect transistors
48%
FinFET
96%
Gas discharge tubes
9%
Gate dielectrics
15%
Gates (transistor)
17%
Graphene nanoribbon
9%
Heat treatment
13%
Heterojunction bipolar transistors
13%
Heterojunctions
38%
High electron mobility transistors
39%
High resolution transmission electron microscopy
9%
Hot Temperature
10%
Ilmenite
22%
Leakage currents
23%
Light emitting diodes
44%
Magnesium
15%
Metallorganic vapor phase epitaxy
9%
Metals
34%
Microwave frequencies
29%
Microwaves
47%
Monolayers
15%
Nanosheets
13%
Nanospheres
10%
Nanowires
100%
Natural frequencies
22%
Networks (circuits)
25%
Optical properties
9%
Organic solar cells
10%
Oxide semiconductors
30%
Oxides
58%
Passivation
16%
Permittivity
48%
Perovskite
55%
Perovskite solar cells
16%
Phase change memory
41%
Photodetectors
24%
Photoelectron spectroscopy
11%
Polymer solar cells
19%
Pulse code modulation
16%
Quantum efficiency
14%
Quenching
10%
Rubidium
9%
Sapphire
16%
Semiconductor materials
10%
Sheet resistance
12%
Silicon
44%
Silver nanowires
18%
Simulators
9%
Sintering
23%
Solar cells
24%
Spray pyrolysis
17%
Sputtering
25%
Static random access storage
48%
Substrates
33%
Sulfur
22%
System-on-chip
10%
Temperature
33%
Thin film solar cells
14%
Thin films
33%
Threshold voltage
29%
Tin oxides
16%
Transistors
36%
Transparent electrodes
13%
Two dimensional electron gas
12%
Ultrasonics
9%
Valence bands
13%
Voltage scaling
16%
Wire
12%
X ray diffraction analysis
14%
Chemical Compounds
Alloy
5%
Annealing
7%
Atomic Layer Epitaxy
6%
Atomistic Simulation
7%
Band Bending
8%
Band Gap
11%
Band Offset
8%
Behavior as Electrode
5%
Boron Nitride
6%
Breakdown Voltage
11%
Buffer Solution
6%
Capacitor
23%
Ceramic
32%
Chemical Passivation
7%
Communication
14%
Cryogenics
6%
Crystallinity
7%
Deep Defect Level
5%
Dielectric Constant
27%
Dielectric Material
37%
Dielectric Property
30%
Dimension
6%
Dioxygen
7%
Doping Material
14%
Drain Current
5%
Electric Field
6%
Electroluminescence
5%
Electron Mobility
29%
Electron Particle
5%
Electronic State
6%
Epitaxial Growth
18%
Field Effect
10%
Fowler-Nordheim Tunneling
10%
Heat Treatment
9%
Hexagonal Space Group
6%
Hysteresis
9%
Interface Trap
6%
Iodide
5%
Leakage Current
27%
Length
8%
Lightning
9%
Liquid Film
30%
Magnesium Atom
12%
Magnesium Oxide
6%
Memory Effect
7%
Metal
9%
Metal Oxide
7%
Microstructure
6%
Microwave
43%
Monolayer
12%
Monopole
9%
Nanomaterial
8%
Nanoparticle
6%
Nanosphere
6%
Nanowire
43%
Nonconductor
10%
Overvoltage
7%
Oxide
19%
Photoelectron
5%
Plastic Property
6%
Reaction Yield
8%
Reduction
7%
Reflection
5%
Reflectivity
5%
Resistance
9%
Semiconductor
5%
Short Circuit
8%
Simulation
54%
Sintering
19%
Solar Cell
25%
Spray Pyrolysis
13%
Sputtering
18%
Sulfurization
15%
Surface
10%
Thermal Conductivity
7%
Thermoelectricity
12%
Time
11%
Transconductance
5%
Trap Density Measurement
16%
Tunneling
13%
Vapor Phase Epitaxy
8%
Voltage
47%
Vulcanization
6%
Wave
5%
X-Ray Diffractometry
11%
Physics & Astronomy
adjusting
5%
antennas
9%
binary systems (materials)
7%
bipolar transistors
12%
brasses
6%
buffers
7%
capacitance
5%
capacitors
8%
carbon steels
6%
cells
8%
ceramics
24%
characterization
6%
citric acid
7%
CMOS
16%
coefficients
9%
conduction bands
6%
cracks
10%
cryogenics
5%
crystal structure
5%
defects
6%
dielectric properties
19%
direct current
5%
electric potential
14%
electrical properties
10%
electrodes
6%
electron mobility
8%
electroplating
6%
elimination
5%
entropy
8%
epitaxy
5%
fabrication
8%
field effect transistors
31%
gratings
8%
heat treatment
11%
heterojunctions
21%
high electron mobility transistors
29%
high speed
5%
hydrostatic pressure
5%
ilmenite
8%
indium oxides
5%
insulators
8%
inverters
15%
ITO (semiconductors)
5%
layouts
5%
leakage
5%
light emitting diodes
18%
lightning
6%
magnesium oxides
7%
metal oxide semiconductors
13%
metals
7%
microwave frequencies
17%
microwaves
25%
mixed oxides
8%
modulation
5%
monopoles
5%
nanorods
5%
nanowires
20%
nucleation
8%
oxygen ions
6%
passivity
5%
performance
20%
permittivity
12%
perovskites
18%
phenyls
8%
photoelectrons
6%
photoluminescence
6%
physics
6%
polymethyl methacrylate
5%
potassium
5%
pyrolysis
5%
Q factors
6%
random access memory
6%
resonant frequencies
14%
routes
5%
sapphire
12%
scaling
5%
short circuit currents
7%
silicon
15%
silicon oxides
5%
silver
7%
simulation
13%
sintering
12%
SOI (semiconductors)
16%
solar cells
24%
spectroscopy
6%
sprayers
5%
sputtering
8%
sulfur
10%
superlattices
5%
switches
5%
temperature
12%
templates
10%
thin bodies
9%
thin films
8%
threshold voltage
12%
tin oxides
5%
transmission electron microscopy
6%
vapor phase epitaxy
9%
wafers
6%
x rays
8%