微電子工程研究所

研究成果

每年研究成果 1981 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2023

• 2411 Article
• 497 Conference contribution
• 85 Conference article
• 49 Paper
• 67 更多
  • 18 Patent
  • 13 Letter
  • 12 Editorial
  • 11 Comment/debate
  • 7 Chapter
  • 5 Review article
  • 1 Book

每年研究成果

每年研究成果

搜尋結果

• 2023

  Investigation of optical responsivity of BiFeO3-based photodetectors equipped with different electrode patterns

  Chuang, R. W., Tsai, T. H., Chuang, W. C. & Huang, C-L., 2023, Oxide-based Materials and Devices XIV. Rogers, D. J. & Teherani, F. H. (編輯). SPIE, 124220X. (Proceedings of SPIE - The International Society for Optical Engineering; 卷 12422).

  研究成果: Conference contribution

  • Responsivity 100%
  • Photodetector 89%
  • Photodetectors 63%
  • photometers 43%
  • Electrodes 37%

• Long period waveguide grating filters on lithium niobate

  Chuang, R. W., Chen, H. L., Chang, Y. C. & Chiu, Y. S., 2023, Integrated Optics: Devices, Materials, and Technologies XXVII. Garcia-Blanco, S. M. & Cheben, P. (編輯). SPIE, 124241Q. (Proceedings of SPIE - The International Society for Optical Engineering; 卷 12424).

  研究成果: Conference contribution

  • Lithium Niobate 100%
  • Full width at half maximum 71%
  • Gratings 67%
  • Cladding 62%
  • Waveguide 56%
• 2022

  (Invited, Digital Presentation) Heterogeneous IGZO/Si CFET Monolithic 3D Integration

  Lee, Y. J., Chang, S. W., Lee, W. H. & Wang, Y. H., 2022, ECS Transactions. 6 編輯 Institute of Physics, p. 145-152 8 p. (ECS Transactions; 卷 109, 編號 6).

  研究成果: Conference contribution

  • Polysilicon 100%
  • Static random access storage 96%
  • Transistors 73%
  • Substrates 61%

• First Demonstration of Heterogeneous L-shaped Field Effect Transistor (LFET) for Angstrom Technology Nodes

  Yang, C. Y., Sung, P. J., Chuang, M. H., Chang, C. W., Shih, Y. J., Huang, T. Y., Lu, D. D., Hong, T. C., Yu, X. R., Lu, W. H., Chang, S. W., Tsai, J. J., Huang, M. K., Cho, T. C., Lee, Y. J., Luo, K. L., Wu, C. T., Su, C. J., Kao, K. H., Chao, T. S., 及其他2Wu, W. F. & Wang, Y. H., 2022, 2022 International Electron Devices Meeting, IEDM 2022. Institute of Electrical and Electronics Engineers Inc., p. 2021-2024 4 p. (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2022-December).

  研究成果: Conference contribution

  • Field effect transistors 100%
  • Field Effect 92%
  • Demonstrations 76%
  • field effect transistors 73%
  • logic 36%

• First Demonstration of Vertical Stacked Hetero-Oriented n-Ge (111)/p-Ge (100) CFET toward Mobility Balance Engineering

  Yu, X. R., Chang, W. H., Hong, T. C., Sung, P. J., Agarwal, A., Luo, G. L., Wu, C. T., Kao, K. H., Su, C. J., Chang, S. W., Lu, W. H., Fu, P. Y., Lin, J. H., Wu, P. H., Cho, T. C., Ma, W. C. Y., Lu, D. D., Chao, T. S., Maeda, T., Lee, Y. J., 及其他3Wu, W. F., Yeh, W. K. & Wang, Y. H., 2022, 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022. Institute of Electrical and Electronics Engineers Inc., p. 399-400 2 p. (Digest of Technical Papers - Symposium on VLSI Technology; 卷 2022-June).

  研究成果: Conference contribution

  • Field effect transistors 100%
  • Demonstrations 76%
  • Nanosheets 70%
  • Raman scattering 67%
  • Electron diffraction 61%

• Improved Synaptic Characteristics in Bilayer Memristor by Post-Oxide Deposition Annealing for Pattern Recognition

  Kumar, D., Huang, Y. R., Pal, P., Saleem, A., Singh, A., Lee, H., Wang, Y. H. & Tseng, T. Y., 2022, 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc., (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022).

  研究成果: Conference contribution

  • Memristors 100%
  • Pattern Recognition 92%
  • Annealing 77%
  • Conductance 74%
  • Pattern recognition 68%

• Integration Design and Process of 3-D Heterogeneous 6T SRAM with Double Layer Transferred Ge/2Si CFET and IGZO Pass Gates for 42% Reduced Cell Size

  Yu, X. R., Chuang, M. H., Chang, S. W., Chang, W. H., Hong, T. C., Chiang, C. H., Lu, W. H., Yang, C. Y., Chen, W. J., Lin, J. H., Wu, P. H., Sun, T. C., Kola, S., Yang, Y. S., Da, Y., Sung, P. J., Wu, C. T., Cho, T. C., Luo, G. L., Kao, K. H., 及其他11Chiang, M. H., Ma, W. C. Y., Su, C. J., Chao, T. S., Maeda, T., Samukawa, S., Li, Y., Lee, Y. J., Wu, W. F., Tarng, J. H. & Wang, Y. H., 2022, 2022 International Electron Devices Meeting, IEDM 2022. Institute of Electrical and Electronics Engineers Inc., p. 2051-2054 4 p. (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2022-December).

  研究成果: Conference contribution

  • Static random access storage 100%
  • inverters 74%
  • cells 48%
  • Reduction 40%
  • footprints 33%

• Neuromorphic Computing with Fe-FinFETs in the Presence of Variation

  De, S., Baig, M. A., Qiu, B. H., Le, H. H., Lee, Y. J. & Lu, D., 2022, 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc., (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022).

  研究成果: Conference contribution

  • Flicker Noise 100%
  • Drain Current 83%
  • Ferroelectric materials 71%
  • FinFET 69%
  • Hafnium Atom 65%
  10 引文 斯高帕斯（Scopus）
• 2021

  Alleviation of charge trapping and flicker noise in HfZrO₂-Based Ferroelectric Capacitors by Thermal Engineering

  De, S., Bu, W. X., Qiu, B. H., Su, C. J., Lee, Y. J. & Lu, D. D., 2021 4月 19, VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings. Institute of Electrical and Electronics Engineers Inc., 9440091. (VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings).

  研究成果: Conference contribution

  • Charge trapping 100%
  • Thermal Engineering 96%
  • Defect density 91%
  • Capacitor 87%
  • Ferroelectric materials 84%
  9 引文 斯高帕斯（Scopus）

• Analytical Modelling of Ferroelectricity Instigated Enhanced Electrostatic Control in Short-Channel FinFETs

  Ciou, J. Y., De, S., Wang, C. W., Lin, W., Lee, Y. J. & Lu, D., 2021 4月 8, 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021. Institute of Electrical and Electronics Engineers Inc., 9420931. (2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021).

  研究成果: Conference contribution

  • Ferroelectricity 100%
  • FinFET 67%
  • Electrostatics 55%
  • Capacitance 44%
  • Length 31%
  2 引文 斯高帕斯（Scopus）

• A Novel Three-Dimensional 6T-SRAM Cell Featuring Vertical Transistors and 24F²Layout Area

  Lu, D. D. & Chen, I. H., 2021 9月 24, 2021 7th International Conference on Applied System Innovation, ICASI 2021. Chang, S-J., Young, S-J., Kin-Tak Lam, A. D., Ji, L-W. & Prior, S. D. (編輯). Institute of Electrical and Electronics Engineers Inc., p. 88-90 3 p. (2021 7th International Conference on Applied System Innovation, ICASI 2021).

  研究成果: Conference contribution

  • random access memory 100%
  • Transistors 73%
  • transistors 68%
  • Data storage equipment 52%
  • cells 46%

• Benchmarking the performance of heterogeneous stacked RRAM with CFETSRAM and MRAM for deep neural network application amidst variation and noise

  Pal, P., Thunder, S., Tsai, M. J., Huang, P. T. & Wang, Y. H., 2021 4月 19, VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings. Institute of Electrical and Electronics Engineers Inc., 9440130. (VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings).

  研究成果: Conference contribution

  • Benchmarking 78%
  • RRAM 78%
  • Deep neural networks 54%
  • Static random access storage 41%
  • Neural Networks 35%
  8 引文 斯高帕斯（Scopus）

• Contact Engineering for High-Performance N-Type 2D Semiconductor Transistors

  Lin, Y., Shen, P. C., Su, C., Chou, A. S., Wu, T., Cheng, C. C., Park, J. H., Chiu, M. H., Lu, A. Y., Tang, H. L., Tavakoli, M. M., Pitner, G., Ji, X., McGahan, C., Wang, X., Cai, Z., Mao, N., Wang, J., Wang, Y., Tisdale, W., 及其他12Ling, X., Aidala, K. E., Tung, V., Li, J., Zettl, A., Wu, C. I., Guo, J., Wang, H., Bokor, J., Palacios, T., Li, L. J. & Kong, J., 2021, 2021 IEEE International Electron Devices Meeting, IEDM 2021. Institute of Electrical and Electronics Engineers Inc., p. 37.2.1-37.2.4 (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2021-December).

  研究成果: Conference contribution

  • Contact Resistance 100%
  • Chemical Passivation 80%
  • Semiconductor materials 70%
  • Transistors 67%
  • transistors 63%
  3 引文 斯高帕斯（Scopus）

• Development of Attachable Transparnet Ultrasonic Transducer: A Versatile Photoacoustic Imaging Device for Body Sensor Network

  Liu, Y. H., Li, C. Y., Chen, L. X., Su, H. Y., Wang, Y. H. & Huang, C. H., 2021 6月 20, 21st International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2021. Institute of Electrical and Electronics Engineers Inc., p. 1424-1427 4 p. (21st International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2021).

  研究成果: Conference contribution

  • Photoacoustic Imaging 100%
  • Photoacoustic effect 80%
  • Ultrasonic transducers 72%
  • Body sensor networks 71%
  • Transducer 61%

• First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3D Integration with Dual Workfunction Gate for Ultra Low-power SRAM and RF Applications

  Chang, S. W., Lu, T. H., Yang, C. Y., Yeh, C. J., Huang, M. K., Meng, C. F., Chen, P. J., Chang, T. H., Chang, Y. S., Jhu, J. W., Hong, T. Z., Ke, C. C., Yu, X. R., Lu, W. H., Baig, M. A., Cho, T. C., Sung, P. J., Su, C. J., Hsueh, F. K., Chen, B. Y., 及其他21Hu, H. H., Wu, C. T., Lin, K. L., Ma, W. C. Y., Lu, D. D., Kao, K. H., Lee, Y. J., Lin, C. L., Huang, K. P., Chen, K. M., Li, Y., Samukawa, S., Chao, T. S., Huang, G. W., Wu, W. F., Lee, W. H., Li, J. Y., Shieh, J. M., Tarng, J. H., Wang, Y. H. & Yeh, W. K., 2021, 2021 IEEE International Electron Devices Meeting, IEDM 2021. Institute of Electrical and Electronics Engineers Inc., p. 34.4.1-34.4.4 (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2021-December).

  研究成果: Conference contribution

  • Static random access storage 100%
  • Etching 96%
  • Field effect transistors 95%
  • Fluorine 82%
  • Demonstrations 73%
  2 引文 斯高帕斯（Scopus）

• Investigating the applicability of ferroelectric hafnium-zirconium-oxide-based nanowire transistors in silicon photonics

  Chuang, R. W., Lee, Y. L., Huang, Y. C., Lee, Y. J. & Su, C. J., 2021, Silicon Photonics XVI. Reed, G. T. & Knights, A. P. (編輯). SPIE, 1169114. (Proceedings of SPIE - The International Society for Optical Engineering; 卷 11691).

  研究成果: Conference contribution

  • Silicon Photonics 100%
  • Nanowires 77%
  • Hafnium 71%
  • Silicon photonics 66%
  • Oxides 62%

• Ultra Low Power 3D-Embedded Convolutional Neural Network Cube Based on α-IGZO Nanosheet and Bi-Layer Resistive Memory

  Thunder, S., Pal, P., Wang, Y. H. & Huang, P. T., 2021, 2021 International Conference on IC Design and Technology, ICICDT 2021. Institute of Electrical and Electronics Engineers Inc., (2021 International Conference on IC Design and Technology, ICICDT 2021).

  研究成果: Conference contribution

  • Nanosheets 100%
  • Cubic Crystal 72%
  • Convolutional neural networks 60%
  • Nanosheet 54%
  • Data storage equipment 40%
  8 引文 斯高帕斯（Scopus）

• Ultra-Low Power Robust 3bit/cell Hf_0.5Zr_0.5O₂ Ferroelectric FinFET with High Endurance for Advanced Computing-In-Memory Technology

  De, S., Lu, D. D., Le, H. H., Mazumder, S., Lee, Y. J., Tseng, W. C., Qiu, B. H., Baig, M. A., Sung, P. J., Su, C. J., Wu, C. T., Wu, W. F., Yeh, W. K. & Wang, Y. H., 2021, 2021 Symposium on VLSI Technology, VLSI Technology 2021. Institute of Electrical and Electronics Engineers Inc., (Digest of Technical Papers - Symposium on VLSI Technology; 卷 2021-June).

  研究成果: Conference contribution

  • Ferroelectric materials 100%
  • FinFET 97%
  • Data storage equipment 46%
  • Multilayer neural networks 19%
  • Neurons 17%
  35 引文 斯高帕斯（Scopus）

• Vertically-waveguide-coupled BaTiO₃-based microdisk optical resonator equipped with the functionality of resistive random-access memory (ReRAM)

  Chuang, R. W., Zheng, Z. Y., Huang, C. L. & Liu, B. L., 2021, Integrated Optics: Devices, Materials, and Technologies XXV. Garcia-Blanco, S. M. & Cheben, P. (編輯). SPIE, 116891Q. (Proceedings of SPIE - The International Society for Optical Engineering; 卷 11689).

  研究成果: Conference contribution

  • Optical Resonators 100%
  • Optical resonators 94%
  • Random Access 76%
  • optical resonators 67%
  • Waveguide 64%
  1 引文 斯高帕斯（Scopus）
• 2020

  3D integration of vertical-stacking of MoS₂and Si CMOS featuring embedded 2T1R configuration demonstrated on full wafers

  Su, C. J., Huang, M. K., Lee, K. S., Hu, V. P. H., Huang, Y. F., Zheng, B. C., Yao, C. H., Lin, N. C., Kao, K. H., Hong, T. C., Sung, P. J., Wu, C. T., Yu, T. Y., Lin, K. L., Tseng, Y. C., Lin, C. L., Lee, Y. J., Chao, T. S., Li, J. Y., Wu, W. F., 及其他3Shieh, J. M., Wang, Y. H. & Yeh, W. K., 2020 12月 12, 2020 IEEE International Electron Devices Meeting, IEDM 2020. Institute of Electrical and Electronics Engineers Inc., p. 12.2.1-12.2.4 9371988. (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2020-December).

  研究成果: Conference contribution

  • RRAM 100%
  • CMOS 63%
  • Surface Modification 61%
  • wafers 53%
  • configurations 38%
  4 引文 斯高帕斯（Scopus）

• First demonstration of heterogenous complementary FETs utilizing Low-Temperature (200 °c) Hetero-Layers Bonding Technique (LT-HBT)

  Hong, T. Z., Chang, W. H., Agarwal, A., Huang, Y. T., Yang, C. Y., Chu, T. Y., Chao, H. Y., Chuang, Y., Chung, S. T., Lin, J. H., Luo, S. M., Tsai, C. J., Li, M. J., Yu, X. R., Lin, N. C., Cho, T. C., Sung, P. J., Su, C. J., Luo, G. L., Hsueh, F. K., 及其他24Lin, K. L., Ishii, H., Irisawa, T., Maeda, T., Wu, C. T., Ma, W. C. Y., Lu, D. D., Kao, K. H., Lee, Y. J., Chen, H. J. H., Lin, C. L., Chuang, R. W., Huang, K. P., Samukawa, S., Li, Y. M., Tarng, J. H., Chao, T. S., Miura, M., Huang, G. W., Wu, W. F., Li, J. Y., Shieh, J. M., Wang, Y. H. & Yeh, W. K., 2020 12月 12, 2020 IEEE International Electron Devices Meeting, IEDM 2020. Institute of Electrical and Electronics Engineers Inc., p. 15.5.1-15.5.4 9372001. (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2020-December).

  研究成果: Conference contribution

  • Heterojunction bipolar transistors 100%
  • Field effect transistors 90%
  • Demonstrations 69%
  • field effect transistors 66%
  • Ambient Reaction Temperature 47%
  7 引文 斯高帕斯（Scopus）

• Investigation of HfSiO_XPassivation Effect on AlGaN/GaN HEMT

  Mazumder, S. & Wang, Y. H., 2020 3月 4, 3rd International Symposium on Devices, Circuits and Systems, ISDCS 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 9262998. (3rd International Symposium on Devices, Circuits and Systems, ISDCS 2020 - Proceedings).

  研究成果: Conference contribution

  • Passivation 100%
  • Electron Mobility 98%
  • High electron mobility transistors 95%
  • high electron mobility transistors 85%
  • passivity 76%
  3 引文 斯高帕斯（Scopus）

• Near-Nernstian pH Sensors Based on Hydrothermally Grown NiO Nanosheets on Hierarchically Roughened Si Substrates

  Kuo, C. Y., Wang, S-J., Chen, P. T. & Ko, R-M., 2020 6月 21, Device Research Conference (DRC 20). Columbus, Ohio, U.S.A

  研究成果: Conference contribution

• Normally-Off InAlN/GaN Fin-MOSHEMT with Fluorine Treatment

  Huang, Y. P., Lee, C. S. & Hsu, W. C., 2020 6月, 2020 Device Research Conference, DRC 2020. Institute of Electrical and Electronics Engineers Inc., 9135151. (Device Research Conference - Conference Digest, DRC; 卷 2020-June).

  研究成果: Conference contribution

  • Fluorine 100%
  • High electron mobility transistors 83%
  • Two dimensional electron gas 42%
  • Power electronics 23%
  • Electron mobility 18%
  4 引文 斯高帕斯（Scopus）

• Revisited parasitic bipolar effect in FDSOI MOSFETs: Mechanism, gain extraction and circuit applications

  Wang, G. Q., Liu, F. Y., Li, B., Luo, J. J., Huang, Y., Su, X. H., Wang, Y. C., Han, Z. S., Wu, C. N., Zhang, J. M. & Cristoloveanu, S., 2020 9月 1, 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2020. Institute of Electrical and Electronics Engineers Inc., 9365391. (2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2020).

  研究成果: Conference contribution

  • Impact ionization 100%
  • Parasitic 79%
  • Bipolar transistors 78%
  • Static random access storage 71%
  • Amplification 65%
  1 引文 斯高帕斯（Scopus）

• The impact of ultraviolet light on the switching characteristics of NiO resistive random-access memory (ReRAM) devices

  Chuang, R. W., Huang, M. C., Hu, Y. K. & Zheng, Z. Y., 2020, Integrated Optics: Devices, Materials, and Technologies XXIV. Garcia-Blanco, S. M. & Cheben, P. (編輯). SPIE, 1128328. (Proceedings of SPIE - The International Society for Optical Engineering; 卷 11283).

  研究成果: Conference contribution

  • Nickel oxide 100%
  • Nickel 92%
  • RRAM 89%
  • Random Access 88%
  • Oxides 87%

• The integrated vertically coupled resistive random-access memory (ReRAM)-based microdisk resonator and the relevant performance evaluation

  Chuang, R. W., Fu, K. L. & Zheng, Z. Y., 2020, Integrated Optics: Devices, Materials, and Technologies XXIV. Garcia-Blanco, S. M. & Cheben, P. (編輯). SPIE, 1128327. (Proceedings of SPIE - The International Society for Optical Engineering; 卷 11283).

  研究成果: Conference contribution

  • Resonator 100%
  • Random Access 99%
  • random access memory 82%
  • Resonators 66%
  • resonators 53%
  2 引文 斯高帕斯（Scopus）

• Tri-Gate Ferroelectric FET Characterization and Modelling for Online Training of Neural Networks at Room Temperature and 233K

  De, S., Baig, M. A., Qiu, B. H., Lu, D., Sung, P. J., Hsueh, F. K., Lee, Y. J. & Su, C. J., 2020 6月, 2020 Device Research Conference, DRC 2020. Institute of Electrical and Electronics Engineers Inc., 9135186. (Device Research Conference - Conference Digest, DRC; 卷 2020-June).

  研究成果: Conference contribution

  • Ferroelectric materials 100%
  • Field effect transistors 81%
  • Neural networks 46%
  • Data storage equipment 30%
  • Temperature 30%
  9 引文 斯高帕斯（Scopus）

• Ultralow Power Neuromorphic Accelerator for Deep Learning Using Ni/HfO₂/TiN Resistive Random Access Memory

  Le, H. H., Hong, W. C., Du, J. W., Lin, T. H., Hong, Y. X., Chen, I. H., Lee, W. J., Chen, N. Y. & Lu, D. D., 2020 4月, 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 9117915. (4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 - Proceedings).

  研究成果: Conference contribution

  • Particle accelerators 100%
  • Deep learning 88%
  • Deep neural networks 63%
  • Data storage equipment 60%
  • Energy Consumption 54%
  7 引文 斯高帕斯（Scopus）

• Wearable transparent PVDF transducer for photoacoustic imager in body sensor network

  Liu, Y. H., Lin, F. S., Chen, L. X., Su, H. Y., Hsu, Y. C., Pal, S., Wang, Y. H. & Huang, C. H., 2020 9月 7, IUS 2020 - International Ultrasonics Symposium, Proceedings. IEEE Computer Society, 9251521. (IEEE International Ultrasonics Symposium, IUS; 卷 2020-September).

  研究成果: Conference contribution

  • vinylidene 100%
  • fluorides 87%
  • transducers 73%
  • indium oxides 59%
  • tin oxides 58%
  2 引文 斯高帕斯（Scopus）
• 2019

  A compact multi transmission zero dual-passband filter using dual stepped impedance resonators

  Tai, T. C., Lin, K. J., Chen, Y. W., Wu, H. W., Su, Y. K., Wang, Y. H. & Lai, H. Y., 2019 5月 14, 2019 IEEE Radio and Wireless Symposium, RWS 2019. IEEE Computer Society, 8714411. (IEEE Radio and Wireless Symposium, RWS).

  研究成果: Conference contribution

  • Resonators 100%
  • simulation 84%
  • Acoustic impedance 78%
  • Electromagnetic simulation 43%
  • Bandpass filters 36%
  2 引文 斯高帕斯（Scopus）

• A Compact Triple Passband Bandpass Filter Using Stub Load - Uniform impedance Resonators

  Lin, K. J., Li, Z. F., Tai, T. C., Wu, H. W. & Wang, Y. H., 2019 12月, Proceedings - 2019 International Symposium on Intelligent Signal Processing and Communication Systems, ISPACS 2019. Institute of Electrical and Electronics Engineers Inc., 8986364. (Proceedings - 2019 International Symposium on Intelligent Signal Processing and Communication Systems, ISPACS 2019).

  研究成果: Conference contribution

  • Bandpass filters 100%
  • Resonators 92%
  • Acoustic impedance 72%
  • Electromagnetic simulation 29%
  • Multipath propagation 28%

• A Comprehensive Kinetical Modeling of Polymorphic Phase Distribution of Ferroelectric-Dielectrics and Interfacial Energy Effects on Negative Capacitance FETs

  Tang, Y. T., Fan, C. L., Kao, Y. C., Modolo, N., Su, C. J., Wu, T. L., Kao, K. H., Wu, P. J., Hsaio, S. W., Useinov, A., Su, P., Wu, W. F., Huang, G. W., Shieh, J. M., Yeh, W. K. & Wang, Y. H., 2019 6月, 2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., p. T222-T223 8776508. (Digest of Technical Papers - Symposium on VLSI Technology; 卷 2019-June).

  研究成果: Conference contribution

  • Ferroelectricity 100%
  • Ferroelectric materials 92%
  • Interfacial energy 86%
  • Field effect transistors 74%
  • Capacitance 59%
  12 引文 斯高帕斯（Scopus）

• A Junctionless SOI FET with Channel Thinning by Ion Implantation (CTIFET) and its application to 6T-SRAM Cell

  Huang, P. K., Chen, H. Y., Wang, S-J., Ko, R-M., Huang, A. C. & Chiang, M-H., 2019 9月 2, International Conference on Solid State Devices and Materials (SSDM’19). Nagoya University, Aichi, Japan

  研究成果: Conference contribution

• A New Transparent Planar Reflector Antennas for Satellite DTV Applications

  Lin, Y. M., Li, Z. F., Tai, T. C., Wu, H. W., Chang, S. J. & Wang, Y. H., 2019 12月, Proceedings - 2019 International Symposium on Intelligent Signal Processing and Communication Systems, ISPACS 2019. Institute of Electrical and Electronics Engineers Inc., 8986280. (Proceedings - 2019 International Symposium on Intelligent Signal Processing and Communication Systems, ISPACS 2019).

  研究成果: Conference contribution

  • Antenna reflectors 100%
  • Thin films 74%
  • Satellites 60%
  • Conductive films 58%
  • Opacity 50%

• An RRAM with a 2D material embedded double switching layer for neuromorphic computing

  Chen, P. A., Ge, R. J., Lee, J. W., Hsu, C. H., Hsu, W. C., Akinwande, D. & Chiang, M. H., 2019 1月 8, 2018 IEEE 13th Nanotechnology Materials and Devices Conference, NMDC 2018. Institute of Electrical and Electronics Engineers Inc., 8605915. (2018 IEEE 13th Nanotechnology Materials and Devices Conference, NMDC 2018).

  研究成果: Conference contribution

  • Plastic Property 100%
  • random access memory 99%
  • oxygen ions 94%
  • plastic properties 79%
  • Ions 78%
  5 引文 斯高帕斯（Scopus）

• Enhanced Electrical Performance and Reliability of Ti-IGZO Thin-Film Transistors with HfxAl1-xO Gate Dielectrics

  Wu, J. H., You, B. C., Wang, S-J., Ko, R-M. & Lin, C. E., 2019 9月 2, International Conference on Solid State Devices and Materials (SSDM’19). Nagoya University, Aichi, Japan, p. PS-10-01 C000328

  研究成果: Conference contribution

• Enhancement of light harvesting for organic solar cells via halogenated (sub-)phthalocyanines and fullerene

  Huang, P. H., Wang, Y. H. & Huang, C. J., 2019 6月, 2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019. Institute of Electrical and Electronics Engineers Inc., 8754074. (2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019).

  研究成果: Conference contribution

  • Organic solar cells 100%
  • Fullerenes 96%
  • fullerenes 64%
  • Molecules 60%
  • Vacuum evaporation 55%

• Exploring the impacts of long-period corrugation and phase gratings on a cascade of phase-shifted lithium niobate waveguides with the combined theoretical and experimental approaches

  Chuang, R. W., Huang, Y. C. & Lee, Y. J., 2019, Physics and Simulation of Optoelectronic Devices XXVII. Osinski, M., Arakawa, Y. & Witzigmann, B. (編輯). SPIE, 1091216. (Proceedings of SPIE - The International Society for Optical Engineering; 卷 10912).

  研究成果: Conference contribution

  • Lithium Niobate 100%
  • Gratings 67%
  • Waveguide 56%
  • Lithium 53%
  • Cascade 51%
  1 引文 斯高帕斯（Scopus）

• Fabrication of omega-gated negative capacitance finfets and SRAM

  Sung, P. J., Su, C. J., Lu, D. D., Luo, S. X., Kao, K. H., Ciou, J. Y., Jao, C. Y., Hsu, H. S., Wang, C. J., Hong, T. C., Liao, T. H., Fang, C. C., Wang, Y. S., Huang, H. F., Li, J. H., Huang, Y. C., Hsueh, F. K., Wu, C. T., Ma, W. C. Y., Huang, K. P., 及其他6Lee, Y. J., Chao, T. S., Li, J. Y., Wu, W. F., Yeh, W. K. & Wang, Y. H., 2019 4月, 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019. Institute of Electrical and Electronics Engineers Inc., 8804663. (2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019).

  研究成果: Conference contribution

  • FinFET 100%
  • Static random access storage 87%
  • Capacitance 66%
  • Annealing 61%
  • Ferroelectricity 49%
  3 引文 斯高帕斯（Scopus）

• First Demonstration of CMOS Inverter and 6T-SRAM Based on GAA CFETs Structure for 3D-IC Applications

  Chang, S. W., Li, J. H., Huang, M. K., Huang, Y. C., Huang, S. T., Wang, H. C., Huang, Y. J., Wang, J. Y., Yu, L. W., Huang, Y. F., Hsueh, F. K., Sung, P. J., Wu, C. T., Ma, W. C. Y., Kao, K. H., Lee, Y. J., Lin, C. L., Chuang, R. W., Huang, K. P., Samukawa, S., 及其他16Li, Y., Lee, W. H., Chu, T. Y., Chao, T. S., Huang, G. W., Wu, W. F., Li, J. Y., Shieh, J. M., Yeh, W. K., Wang, Y. H., Lu, D. D., Wang, C. J., Lin, N. C., Su, C. J., Lo, S. H. & Huang, H. F., 2019 12月, 2019 IEEE International Electron Devices Meeting, IEDM 2019. Institute of Electrical and Electronics Engineers Inc., 8993525. (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2019-December).

  研究成果: Conference contribution

  • inverters 100%
  • Static random access storage 89%
  • Field effect transistors 86%
  • CMOS 72%
  • Demonstrations 65%
  33 引文 斯高帕斯（Scopus）

• Gradual RESET modulation by intentionally oxidized titanium oxide for multilayer-hBN RRAM

  Chen, P. A., Hsu, W. C. & Chiang, M. H., 2019 10月, 2019 IEEE 14th Nanotechnology Materials and Devices Conference, NMDC 2019. Institute of Electrical and Electronics Engineers Inc., 9084024. (2019 IEEE 14th Nanotechnology Materials and Devices Conference, NMDC 2019).

  研究成果: Conference contribution

  • Titanium oxides 100%
  • Boron nitride 95%
  • Boron Nitride 77%
  • Titanium Oxide 74%
  • Multilayers 65%
  1 引文 斯高帕斯（Scopus）

• Graphene Quantum Dots and Silver Nanoparticles Based High Sensitivity SERS Molecular Sensors

  Tzeng, Y. & Lai, J., 2019 1月 24, 18th International Conference on Nanotechnology, NANO 2018. IEEE Computer Society, 8626397. (Proceedings of the IEEE Conference on Nanotechnology; 卷 2018-July).

  研究成果: Conference contribution

  • Graphene quantum dots 100%
  • Silver nanoparticles 68%
  • Molecules 46%
  • Silver Nanoparticle 42%
  • silver 38%

• Improved sensitivity of pH sensors based on hydrothermally grown nickel oxide nanosheets on Si surface with pyramidal cones

  Kuo, C. Y., Wang, Y. S., Wang, S-J., Ko, R-M., Ou-Yang, Y. S. & Chen, P. T., 2019 9月 2, International Conference on Solid State Devices and Materials (SSDM’19). Nagoya University, Aichi, Japan

  研究成果: Conference contribution

• New Compact Triple-Passband Bandpass Filter with wide stopband

  Jiang, Y. C., Chen, Y. W., Lu, Y. C., Lin, K. J., Tai, T. C., Wu, H. W. & Wang, Y. H., 2019 8月, 2019 International Conference on Engineering, Science, and Industrial Applications, ICESI 2019. Institute of Electrical and Electronics Engineers Inc., 8863028. (2019 International Conference on Engineering, Science, and Industrial Applications, ICESI 2019).

  研究成果: Conference contribution

  • Bandpass Filter 100%
  • Filter 64%
  • Bandpass filters 63%
  • Electric Impedance 62%
  • Acoustic impedance 45%
  4 引文 斯高帕斯（Scopus）

• Speed Optimization of Vertically Stacked Gate-All-Around MOSFETs with Inner Spacers for Low Power and Ultra-Low Power Applications

  Huang, Y. C., Chiang, M. H. & Wang, S. J., 2019 4月 23, Proceedings of the 20th International Symposium on Quality Electronic Design, ISQED 2019. IEEE Computer Society, p. 231-234 4 p. 8697706. (Proceedings - International Symposium on Quality Electronic Design, ISQED; 卷 2019-March).

  研究成果: Conference contribution

  • Semiconductor doping 100%
  • Leakage currents 71%
  • Controllability 68%
  • System-on-chip 67%
  • Masks 62%
  3 引文 斯高帕斯（Scopus）

• Voltage Transfer Characteristic Matching by Different Nanosheet Layer Numbers of Vertically Stacked Junctionless CMOS Inverter for SoP/3D-ICs applications

  Sung, P. J., Chang, C. Y., Chen, L. Y., Kao, K. H., Su, C. J., Liao, T. H., Fang, C. C., Wang, C. J., Hong, T. C., Jao, C. Y., Hsu, H. S., Luo, S. X., Wang, Y. S., Huang, H. F., Li, J. H., Huang, Y. C., Hsueh, F. K., Wu, C. T., Huang, Y. M., Hou, F. J., 及其他16Luo, G. L., Huang, Y. C., Shen, Y. L., Ma, W. C. Y., Huang, K. P., Lin, K. L., Samukawa, S., Li, Y., Huang, G. W., Lee, Y. J., Li, J. Y., Wu, W. F., Shieh, J. M., Chao, T. S., Yeh, W. K. & Wang, Y. H., 2019 1月 16, 2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., p. 21.4.1-21.4.4 8614553. (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2018-December).

  研究成果: Conference contribution

  • Nanosheets 100%
  • inverters 82%
  • CMOS 59%
  • Nanosheet 54%
  • Voltage 47%
  6 引文 斯高帕斯（Scopus）
• 2018

  Absorption of high-frequency power by using graphene films

  Lin, G. S., Chen, L. S. & Houng, M., 2018 10月 1, Proceedings of the 2017 IEEE International Conference on Information, Communication and Engineering: Information and Innovation for Modern Technology, ICICE 2017. Lam, A. D. K-T., Prior, S. D. & Meen, T-H. (編輯). Institute of Electrical and Electronics Engineers Inc., p. 87-89 3 p. 8479120. (Proceedings of the 2017 IEEE International Conference on Information, Communication and Engineering: Information and Innovation for Modern Technology, ICICE 2017).

  研究成果: Conference contribution

  • Wireless Communication 38%
  • Sheet resistance 29%
  • Substrate 27%
  • Screen printing 27%
  • Microstrip lines 24%

• A comprehensive study of polymorphic phase distribution of ferroelectric-dielectrics and interfacial layer effects on negative capacitance FETs for Sub-5 nm node

  Tang, Y. T., Su, C. J., Wang, Y. S., Kao, K. H., Wu, T. L., Sung, P. J., Hou, F. J., Wang, C. J., Yeh, M. S., Lee, Y. J., Wu, W. F., Huang, G. W., Shieh, J. M., Yeh, W. K. & Wang, Y. H., 2018 10月 25, 2018 IEEE Symposium on VLSI Technology, VLSI Technology 2018. Institute of Electrical and Electronics Engineers Inc., p. 45-46 2 p. 8510696. (Digest of Technical Papers - Symposium on VLSI Technology; 卷 2018-June).

  研究成果: Conference contribution

  • Ferroelectric materials 100%
  • Field effect transistors 81%
  • Capacitance 64%
  • Depolarization 35%
  • Doping (additives) 28%
  11 引文 斯高帕斯（Scopus）

• An area efficient low-voltage 6-T SRAM cell using stacked silicon nanowires

  Huang, Y. C., Chiang, M. H., Wang, S. J. & Gupta, S. K., 2018 6月 27, ICICDT 2018 - International Conference on IC Design and Technology, Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 117-120 4 p. (ICICDT 2018 - International Conference on IC Design and Technology, Proceedings).

  研究成果: Conference contribution

  • Nanowires 100%
  • Doping (additives) 89%
  • Static random access storage 89%
  • Silicon 63%
  • Electric potential 41%
  5 引文 斯高帕斯（Scopus）