微電子工程研究所

研究成果

每年研究成果 1981 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2023

• 2411 Article
• 497 Conference contribution
• 85 Conference article
• 49 Paper
• 67 更多
  • 18 Patent
  • 13 Letter
  • 12 Editorial
  • 11 Comment/debate
  • 7 Chapter
  • 5 Review article
  • 1 Book

每年研究成果

每年研究成果

搜尋結果

• 2014

  Enhanced light-extraction efficiency in GaN-based light-emitting diodes via nanopillars on roughened surface

  Zeng, X. F., Chang, S. J. & Shei, S. C., 2014, p. 265-268. 4 p.

  研究成果: Paper › 同行評審

  • Nanopillars 100%
  • Light emitting diodes 57%
  • Etching 37%
  • Adsorption 19%
  • Nanoparticles 18%

• Optimization of small molecule organic solar cells based on Boron Subphthalocyanine Chloride (SubPc) and fullerene (C ₆₀ )

  Ke, J. C., Wang, Y-H., Huang, C. J., Huang, P. H. & Kang, C. C., 2014 1月 1, p. 47-49. 3 p.

  研究成果: Paper › 同行評審

  • Organic solar cells 100%
  • Fullerenes 96%
  • Boron 70%
  • Molecules 60%
  • Molecular orbitals 23%
• 2011

  Modeling intrinsic and extrinsic asymmetry of 3D cylindrical gate/gate-all-around FETs for circuit simulations

  Venugopalan, S., Chauhan, Y. S., Lu, D. D., Karim, M. A., Niknejad, A. M. & Hu, C., 2011, p. 125-128. 4 p.

  研究成果: Paper › 同行評審

  • Circuit simulation 65%
  • Doping (additives) 32%
  • Computer simulation 31%
  • SPICE 31%
  • Transistors 24%
  2 引文 斯高帕斯（Scopus）
• 2006

  BSIM4 and BSIM multi-gate progress

  Dunga, M. V., Lin, C. H., Xi, X., Chen, S., Lu, D. D., Niknejad, A. M. & Hu, C., 2006, p. 658-661. 4 p.

  研究成果: Paper › 同行評審

  • Transistors 100%
  13 引文 斯高帕斯（Scopus）
• 2005

  Effects of post-growth annealing treatment on the photoluminescence of ZnO nanorods

  Wang, D., Sathitsuksanoh, N., Yang, H. Y., Seo, H. W., Tzeng, Y. H., Tin, C. C., Bozack, M. J., Williams, J. R. & Park, M., 2005, p. 11075-11083. 9 p.

  研究成果: Paper › 同行評審
• 2004

  A 3.5GHz 2W MMIC power amplifier using AlGaAs/InGaAs/GaAs PHEMTs

  Chu, C. K., Huang, H. K., Liu, H. Z., Chiu, R. J., Lin, C. H., Wang, C. C., Wang, Y. H., Hsu, C. C., Wu, W., Wu, C. L. & Chang, C. S., 2004 12月 1, p. 101-104. 4 p.

  研究成果: Paper › 同行評審

  • Monolithic microwave integrated circuits 100%
  • Power amplifiers 87%
  • Wireless local area networks (WLAN) 85%
  • Acoustic impedance 64%
  2 引文 斯高帕斯（Scopus）

• Characterization of gan schottky barrier photodiodes with a low-temperature GaN Cap layer

  Lee, M. L., Sheu, J. K., Su, Y. K., Chang, S. J., Lai, W. C. & Chi, G. C., 2004, p. 260-269. 10 p.

  研究成果: Paper › 同行評審

  • Photodiodes 100%
  • Vapor phase epitaxy 47%
  • Organometallics 40%
  • Dark currents 40%
  • Photocurrents 38%

• High linearity power amplifier for PHS base station using a 50 mm AlGaAs/InGaAs/GaAs PHEMT

  Liu, H. Z., Huang, H. K., Wang, C. C., Wang, Y. H., Chang, C. H., Wu, W., Wu, C. L. & Chang, C. S., 2004, p. 105-108. 4 p.

  研究成果: Paper › 同行評審

  • Power amplifiers 100%
  • Base stations 88%

• InGaP/InGaAs/GaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor with a liquid phase oxidized InGaP gate

  Lee, K. W., Lin, Y. J., Yang, N. Y., Lee, Y. C., Sze, P. W., Wang, Y-H. & Houng, M., 2004 12月 1, p. 2301-2304. 4 p.

  研究成果: Paper › 同行評審

  • Oxide semiconductors 100%
  • High electron mobility transistors 97%
  • Liquids 56%
  • Metals 54%
  • Gate dielectrics 39%
  3 引文 斯高帕斯（Scopus）

• Liquid phase oxidation on GaAs-based materials and the applications

  Wang, Y. H., 2004 12月 1, p. 2291-2296. 6 p.

  研究成果: Paper › 同行評審

  • Oxidation 100%
  • Liquids 75%
  • Oxides 32%
• 2002

  A four-stage Ku-Band 1 watt PHEMT MMIC power amplifier

  Liu, H. Z., Wang, C. C., Wang, Y. H., Huang, J. W., Chang, C. H., Wu, W., Wu, C. L. & Chang, C. S., 2002, p. 33-36. 4 p.

  研究成果: Paper › 同行評審

  • Monolithic microwave integrated circuits 100%
  • Power amplifiers 87%
  • Acoustic impedance 32%
  10 引文 斯高帕斯（Scopus）

• High reliability in low noise InGaP gated PHEMTs

  Wang, C. S., Huang, H. K., Wang, Y-H., Wu, C. L. & Chang, C. S., 2002 1月 1, p. 81-84. 4 p.

  研究成果: Paper › 同行評審

  • High electron mobility transistors 100%
  • Thermal stress 85%
  • Transconductance 34%
  • Noise figure 32%
  • Capacitance 24%
  1 引文 斯高帕斯（Scopus）
• 2001

  Super low noise InGaP gated PHEMT

  Huang, H. K., Wang, Y. H., Wu, C. L., Wang, J. C. & Chang, C. S., 2001, p. 237-240. 4 p.

  研究成果: Paper › 同行評審

  • Wet etching 100%
  • Transconductance 85%
  • Noise figure 81%
  • Threshold voltage 78%
  2 引文 斯高帕斯（Scopus）
• 2000

  Depletion-mode GaAs MOSFET with a low temperature selective grown oxide gate

  Wu, J. Y., Wang, H. H., Sze, P. W., Wang, Y. H. & Houng, M. P., 2000 12月 1, p. 149-154. 6 p.

  研究成果: Paper › 同行評審

  • Masks 100%
  • Oxidation 93%
  • Oxides 90%
  • Metals 45%
  • Passivation 42%
• 1999

  A high-breakdown and low-offset voltage InGaP/GaAs heterostructure bipolar transistor for power system applications

  Liu, W-C., Cheng, S. Y., Wang, W. C., Chen, J. Y., Pan, H. J., Feng, S. C. & Yu, K. H., 1999 12月 1.

  研究成果: Paper › 同行評審

  • Breakdown Voltage 100%
  • Heterojunctions 87%
  • Bipolar transistors 82%
  • Heterojunction bipolar transistors 59%
  • Electric breakdown 56%

• A high-breakdown voltage n⁺-GaAs/δ (p⁺)-GaInP/ n-GaAs heterojunction camel-gate transistor for power system applications

  Liu, W-C., Chang, W. L., Chen, J. Y., Pan, H. J., Wang, W. C., Yu, K. H. & Feng, S. C., 1999 12月 1.

  研究成果: Paper › 同行評審

  • Current Gain 100%
  • Transconductance 86%
  • Breakdown Voltage 84%
  • Leakage Current 73%
  • Heterojunctions 73%

• Design consideration of emitter-base junction structure for InGaP/GaAs heterojunction bipolar transistor

  Liu, W-C., Chen, J. Y., Wang, W. C., Feng, S. C., Yu, K. H. & Yan, J. H., 1999 1月 1, p. 246-248. 3 p.

  研究成果: Paper › 同行評審

  • Current Gain 100%
  • Heterojunction bipolar transistors 66%
  • Doping (additives) 62%
  • Voltage 40%
  • Passivation 34%
  1 引文 斯高帕斯（Scopus）

• High-barrier gate and tri-step doped channel transistor

  Liu, W. C., Pan, H. J., Chang, W. L., Yu, K. H., Feng, S. C. & Yan, J. H., 1999, p. 454-456. 3 p.

  研究成果: Paper › 同行評審

  • Transconductance 100%
  • Breakdown Voltage 97%
  • Electric breakdown 73%
  • Field Effect 64%
  • Transistors 55%

• High-breakdown and high-linearity Ga_0.51In_0.49P/In_0.15Ga_0.85As pseudomorphic HEMT

  Liu, W-C., Chang, W. L., Chen, J. Y., Yu, K. H., Feng, S. C. & Yan, J. H., 1999 1月 1, p. 457-459. 3 p.

  研究成果: Paper › 同行評審

  • Schottky Contact 100%
  • Transconductance 94%
  • Breakdown Voltage 92%
  • Fluorescence Maxima 81%
  • High electron mobility transistors 71%

• InGaP/GaAs resonant-tunneling transistor (RTT)

  Liu, W. C., Shie, Y. S., Chang, W. L., Feng, S. C., Yu, K. H. & Yan, J. H., 1999, p. 240-242. 3 p.

  研究成果: Paper › 同行評審

  • Valence bands 100%
  • Current Gain 98%
  • Resonant Tunneling 97%
  • Resonant tunneling 95%
  • Current voltage characteristics 73%

• New InGaP/GaAs double heterojunction bipolar transistor (DHBT) with a δ-doped wide-gap collector

  Liu, W-C., Wang, W. C., Chang, W. L., Yu, K. H., Feng, S. C. & Yan, J. H., 1999 1月 1, p. 243-245. 3 p.

  研究成果: Paper › 同行評審

  • Heterojunction bipolar transistors 100%
  • Current Gain 74%
  • Breakdown Voltage 63%
  • Voltage 61%
  • Heterojunctions 55%

• On the AlInAs/GaInAs superlatticed negative-differential-resistance transistor (SNDRT)

  Liu, W. C., Cheng, S. Y., Pan, H. J., Feng, S. C., Yu, K. H. & Yan, J. H., 1999, p. 249-251. 3 p.

  研究成果: Paper › 同行評審

  • Resonant Tunneling 100%
  • Resonant tunneling 98%
  • Superlattice 58%
  • Transistors 48%
  • Switches 20%
• 1998

  Analytic model for asymmetric trapezoidal-gate MOSFET

  Kao, C. H., Cho, S. K., Wei, C. T., Wong, S. C., Houng, M. P. & Wang, Y. H., 1998, p. 420-423. 4 p.

  研究成果: Paper › 同行評審

  • Capacitance 100%
  • Poisson equation 99%
  • Green's function 45%
  • Polynomials 30%
  • Economics 24%
  1 引文 斯高帕斯（Scopus）
• 1997

  Effects of passivation and extraction trap density on the 1/f noise of HgCdTe photoconductive detector

  Lin, C. T., Su, Y. K., Huang, H. T., Chang, S. J., Chen, G. S., Sun, T. P. & Luo, J. J., 1997, p. 168-174. 7 p.

  研究成果: Paper › 同行評審

  • Passivation 100%
  • Detectors 64%
  • Focal plane arrays 22%
  • Spectral density 22%
  • Oxides 14%
  1 引文 斯高帕斯（Scopus）

• Study of delta-doping concentration effect on a novel quantum-well HEMT structure

  Cheng, C. Y., Wang, S-J., Lin, J. C. & Luo, Y. C., 1997 1月 1, p. 209-212. 4 p.

  研究成果: Paper › 同行評審

  • Semiconductor quantum wells 100%
  • Transconductance 76%
  • High electron mobility transistors 74%
  • Doping (additives) 71%
  • Current density 61%
• 1996

  Investigation of step-doped channel heterostructure field-effect transistor

  Liu, W. C., Laih, L. W., Tsai, J. H., Chen, J. Y., Wang, W. C. & Lin, P. H., 1996 12月 1, p. 251-254. 4 p.

  研究成果: Paper › 同行評審

  • Transconductance 100%
  • High electron mobility transistors 96%
  • Threshold voltage 91%
  • Electric breakdown 47%
  • Networks (circuits) 23%
  3 引文 斯高帕斯（Scopus）

• New functional AlGaAs/InGaAs/GaAs heterostructure-emitter and heterostructure-base transistor (HEHBT)

  Liu, W. C., Tsai, J. H., Laih, L. W., Chen, H. R., Cheng, S. Y., Wang, W. C., Lin, P. H. & Chen, J. Y., 1996, p. 247-250. 4 p.

  研究成果: Paper › 同行評審

  • Semiconductor quantum wells 100%
  • Heterojunctions 83%
  • Valence bands 57%
  • Transistors 54%
  • Electrons 32%

• On the recombination currents effect of heterostructure-emitter bipolar transistors (HEBT's)

  Liu, W. C., Tsai, J. H., Laih, L. W., Cheng, S. Y., Wang, W. C., Lin, P. H., Chen, J. Y. & Lin, H. H., 1996, p. 243-246. 4 p.

  研究成果: Paper › 同行評審

  • Heterojunctions 100%
  • Bipolar transistors 94%
  • Electric properties 16%
  • Electric potential 15%
  • Transistors 13%

• Reverse antenna effect due to process-induced quasi-breakdown of gate oxide

  Chen, J. F., Gelatos, C., Tobin, P., Shimer, R. & Hu, C., 1996, p. 94-97. 4 p.

  研究成果: Paper › 同行評審

  • Oxides 100%
  • Antennas 75%
  • Leakage currents 25%
  • Transistors 19%
  1 引文 斯高帕斯（Scopus）
• 1995

  GaAs-InGaAs doped-channel negative-differential-resistance field-effect transistor (NDRFET)

  Liu, W-C., Laih, L. W., Tsai, J. H., Thei, K. B., Wu, C. Z., Lour, W. S., Ting, Y. T. & Liu, R. C., 1995 12月 1, p. 103-106. 4 p.

  研究成果: Paper › 同行評審

  • Field effect transistors 100%
  • Photoconductivity 87%
  • Transistors 79%
  • Electron mobility 73%
  • Heterojunctions 61%
  1 引文 斯高帕斯（Scopus）

• GaAs tri-step high-low doping channel field effect transistor

  Liu, W-C., Tsai, J. H., Li-Wen, Thei, K. B., Wu, C. Z., Lour, W. S., Yuan-Tzu & Liu, R. C., 1995 12月 1, p. 107-110. 4 p.

  研究成果: Paper › 同行評審

  • Doping (additives) 100%
  • Field effect transistors 95%
  • Gates (transistor) 63%
  • Transconductance 53%
  • Electric potential 46%

• Three-terminal switching device with InGaAs/GaAs/InGaAs hole confinement layer

  Lour, W. S., Liu, W-C., Tsai, J. H., Laih, L. W., Chen, J. R. & Tsai, M. K., 1995 12月 1, p. 95-98. 4 p.

  研究成果: Paper › 同行評審

  • Anodes 100%
  • Semiconductor quantum wells 80%
  • Impact ionization 80%
  • Molecular beam epitaxy 80%
  • Electric potential 80%
• 1994

  A GaAs double negative differential resistance device with a p⁺ AlGaAs base

  Yarn, K. F., Chang, C. Y., Wang, Y. H., Wei, H. C., Sze, P. W. & Jeng, J. M., 1994.

  研究成果: Paper › 同行評審

  • Resistance 100%
  • Electric potential 81%
  • Hole Gas 81%
  • Gases 45%
  • Tunneling 40%

• Design of multiple-quantum-well electroabsorption surface-normal modulators using asymmetric Fabry-Perot structures

  Pan, R. S., Houng, M. P. & Wang, Y. H., 1994 1月 1.

  研究成果: Paper › 同行評審

  • Semiconductor quantum wells 100%
  • Modulators 65%
  • λFmax 27%
  • Etalons 26%
  • Insertion losses 16%
  1 引文 斯高帕斯（Scopus）

• High hole mobility transistor (HHMT) with dual Si/Ge_0.4Si_0.6/Si wells structure grown by Si MBE

  Wang, S. J., Wu, S. L., Chung, H. D., Chang, W. & Wang, K. L., 1994.

  研究成果: Paper › 同行評審

  • Hole concentration 100%
  • Hole mobility 87%
  • Molecular beam epitaxy 81%
  • Transconductance 81%
  • Hole Concentration 80%

• MBE grown GaAs-InGaAs quantum-well resonant-Tunneling switching device

  Liu, W. C., Guo, D. F. & Laih, L. W., 1994 1月 1.

  研究成果: Paper › 同行評審

• The carrier transport in the GaSb/AlSb/InAs/GaSb/AlSb/InAs resonant interband tunneling structures

  Liu, M. H., Wang, Y. H., Houng, M. P., Chen, J. F. & Cho, A. Y., 1994.

  研究成果: Paper › 同行評審

  • Resonant tunneling 100%
  • Carrier transport 90%
  • Current voltage characteristics 77%
  • Tunneling 59%
  • Resistance 36%
• 1992

  Simulation of composite resonant tunneling diodes for multiple-valued logic applications

  Wang, S. J. & Uang, K. M., 1992 1月 1, p. 322-324. 3 p.

  研究成果: Paper › 同行評審

  • Resonant tunneling diodes 100%
  • Composite materials 36%
  • Electric potential 8%
• 1991

  Hybrid (Confinement and tunneling) application of AlGaAs/GaAs superlattice in a double-NDR transistor

  Liu, W. C., Lour, W. S., Wang, Y. H., Sun, C. Y., Lee, Y. S. & Guo, D. F., 1991, p. 371-373. 3 p.

  研究成果: Paper › 同行評審

  • Resonant tunneling 100%
  • Bipolar transistors 71%
  • Electrons 58%
  • Transistors 49%
  • Temperature 23%

• MBE growth of AlGaAs/GaAs vertical cavity surface emitting lasers and the performance of PIN/VCSEL integrated structures

  Wang, Y. H., Hasnain, G., Tai, K., Wynn, J. D., Weir, B. E., Choquette, K. D. & Cho, A. Y., 1991, p. 329-331. 3 p.

  研究成果: Paper › 同行評審

  • Molecular beam epitaxy 100%
  • Surface emitting lasers 91%
  • Photodetectors 55%
  • Quantum well lasers 42%
  • Distributed Bragg reflectors 41%

• Room temperature characteristics of GaAs δ-doped superlattice switching transistor

  Liu, W. C., Sun, C. Y., Lour, W. S., Guo, D. F. & Lee, Y. S., 1991, p. 368-370. 3 p.

  研究成果: Paper › 同行評審

  • Semiconductor junctions 100%
  • Transistors 96%
  • Current voltage characteristics 74%
  • Transport properties 71%
  • Cathodes 56%
• 1990

  MBE-grown GaAs voltage-controlled bipolar-unipolar transition negative differential resistance power transistor

  Yarn, K. F., Chang, C. Y., Wang, Y. H. & Wang, R. L., 1990, p. 55-58. 4 p.

  研究成果: Paper › 同行評審

  • Resonant tunneling 100%
  • Molecular beam epitaxy 90%
  • Hot electrons 86%
  • Power transistors 75%
  • Current density 56%

• Negative differential resistance in a novel GaAs delta-doping tunneling diode

  Wang, R. L., Su, Y. K. & Wang, Y-H., 1990 12月 1, p. 27-29. 3 p.

  研究成果: Paper › 同行評審

  • Doping (additives) 100%
  • Diodes 82%
  • Resonant tunneling 76%
  • Semiconductor quantum wells 70%
  • Impact ionization 69%
• 1987

  FABRICATION AND HIGH TEMPERATURE CHARACTERISTICS OF DIAMOND ELECTRONIC DEVICES.

  Tzeng, Y., Lin, T. H., Davidson, J. L. & Lan, L. S., 1987 1月 1, p. 187-190. 4 p.

  研究成果: Paper › 同行評審

  • Diamonds 100%
  • Diodes 92%
  • Ion implantation 45%
  • Bipolar transistors 41%
  • Temperature 40%
  4 引文 斯高帕斯（Scopus）
• 1985

  ROLES OF N//2 O IN CF//4 plus N//2 O PLASMA ETCHING OF SILICON AND PHOTORESIST.

  Tzeng, Y-H., Lin, T. H., Davidson, J. L. & Jang, B. Z., 1985 12月 1, p. 28-33. 6 p.

  研究成果: Paper › 同行評審

  • Plasma etching 100%
  • Photoresists 85%
  • Plasmas 61%
  • Silicon 52%
  • Etching 36%
• 1982

  MIS SOLAR CELL MADE ON PLASMA HYDROGENATED POLYCRYSTALLINE SILICON.

  Chang, C. Y., Fang, Y. K., Wu, B. S., Wang, S. R., Hsu, W. C. & Liu, W. C., 1982, p. 372-376. 5 p.

  研究成果: Paper › 同行評審
• 1981

  DEPENDENCE OF PROPERTIES ON PLASMA POWER IN AN a-Si-H FILM.

  Chang, C. Y., Fang, Y. K., Lin, W. L. & Hsu, W. C., 1981, p. 368-374. 7 p.

  研究成果: Paper › 同行評審
  2 引文 斯高帕斯（Scopus）

• DLTS MEASUREMENT OF BULK DENSITY OF GAP STATES IN PLASMA ENHANCED CVD AMORPHOUS SILICON.

  Chang, C. Y., Fang, Y. K., Hsu, W. C. & Lin, W. L., 1981, p. 357-367. 11 p.

  研究成果: Paper › 同行評審
  2 引文 斯高帕斯（Scopus）

• EXPERIMENTAL OBSERVATIONS OF MOBILITY AND LIFETIME IN a-Si-H THIN FILMS.

  Chang, C. Y., Fang, Y. K., Lin, W. L. & Hsu, W. C., 1981, p. 400-412. 13 p.

  研究成果: Paper › 同行評審