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查看啟用 Ching-Ting Lee 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
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國家/地區層面的近期外部共同作業。按一下圓點深入探索詳細資料，或
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Fabrication and Characterization of AlGaN/GaN Enhancement-Mode MOSHEMTs with Fin-Channel Array and Hybrid Gate-Recessed Structure and LiNbO3Ferroelectric Charge Trap Gate-Stack Structure
Lee, H. Y., Lin, C. H. & Lee, C. T., 2022 2月 1, 於: IEEE Transactions on Electron Devices. 69, 2, p. 500-506 7 p.研究成果: Article › 同行評審
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Mg-doped beta-Ga2O3 films deposited by plasma-enhanced atomic layer deposition system for metal-semiconductor-metal ultraviolet C photodetectors
Chu, S. Y., Yeh, T. H., Lee, C. T. & Lee, H. Y., 2022 5月, 於: Materials Science in Semiconductor Processing. 142, 106471.研究成果: Article › 同行評審
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Performance comparison of lattice-matched alinn/gan/algan/gan double-channel metal–oxide–semiconductor high-electron mobility transistors with planar channel and multiple-mesa-fin-channel array
Lee, H. Y., Ju, Y. H., Chyi, J. I. & Lee, C. T., 2022 1月 1, 於: Materials. 15, 1, 42.研究成果: Article › 同行評審
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AlGaN/GaN Enhancement-Mode MOSHEMTs Utilizing Hybrid Gate-Recessed Structure and Ferroelectric Charge Trapping/Storage Stacked LiNbO3/HfO2/Al2O3Structure
Lee, H. Y., Lin, C. H., Wei, C. C., Yang, J. C., Chang, E. Y. & Lee, C. T., 2021 8月, 於: IEEE Transactions on Electron Devices. 68, 8, p. 3768-3774 7 p., 9466375.研究成果: Article › 同行評審
3 引文 斯高帕斯（Scopus） -
AlGaN/GaN Metal-Oxide-Semiconductor High-Electron Mobility Transistors Using Ga2O3 Gate Dielectric Layer Grown by Vapor Cooling Condensation System
Lee, H. Y., Chang, T. W. & Lee, C. T., 2021 6月, 於: Journal of Electronic Materials. 50, 6, p. 3748-3753 6 p.研究成果: Article › 同行評審
4 引文 斯高帕斯（Scopus）