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查看斯高帕斯 (Scopus) 概要
李 清庭
Visiting Chair Professor
光電科學與工程學系
電話
886 6 2757575 ext 62393
電子郵件
ctlee
ee.ncku.edu
tw
h-index
7402
引文
40
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1982 …
2024
每年研究成果
概覽
指紋
網路
專案
(3)
研究成果
(508)
類似的個人檔案
(12)
指紋
查看啟用 Ching-Ting Lee 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Engineering & Materials Science
Aluminum oxide
19%
Annealing
31%
Buffer layers
43%
Cable television systems
23%
Chemical sensors
19%
Chemical vapor deposition
24%
Condensation
27%
Conversion efficiency
25%
Cooling
19%
Diodes
23%
Electric potential
19%
Electric properties
19%
Electrodes
23%
Heterojunctions
33%
High electron mobility transistors
100%
Lasers
30%
Leakage currents
24%
Light emitting diodes
63%
Metals
93%
Modulators
19%
Molecular beam epitaxy
24%
Nanoclusters
31%
Nanorods
73%
Nitrides
20%
Ohmic contacts
45%
Oxidation
31%
Oxide films
45%
Oxide semiconductors
68%
Oxides
35%
Passivation
26%
Photodetectors
76%
Photoluminescence
41%
Plasma enhanced chemical vapor deposition
19%
Semiconductor materials
42%
Semiconductor quantum wells
19%
Silicon
22%
Solar cells
23%
Substrates
50%
Temperature
32%
Thin film transistors
40%
Thin films
29%
Tin oxides
31%
Transconductance
26%
Vapors
29%
Waveguides
42%
Wavelength
33%
Zinc oxide
51%
Physics & Astronomy
annealing
20%
augmentation
18%
buffers
26%
cable television
25%
condensation
23%
conformal mapping
16%
contact resistance
19%
cooling
18%
defects
13%
electric contacts
56%
electric potential
12%
electrodes
15%
electroluminescence
12%
fibers
13%
field effect transistors
22%
gratings
12%
high electron mobility transistors
30%
indium
13%
indium oxides
22%
lasers
17%
light emitting diodes
57%
metal oxide semiconductors
28%
metalorganic chemical vapor deposition
15%
metals
33%
modulators
18%
MSM (semiconductors)
17%
nanoclusters
14%
nanorods
40%
oxidation
18%
oxide films
23%
passivity
16%
performance
54%
photoelectron spectroscopy
13%
photoluminescence
17%
photometers
47%
propagation
12%
quantum dots
14%
radio frequencies
13%
Schottky diodes
14%
sensors
26%
solar cells
23%
surface treatment
13%
thin films
32%
tin oxides
17%
transistors
25%
vapor deposition
11%
vapors
22%
waveguides
43%
wavelengths
14%
zinc oxides
35%
Chemical Compounds
Annealing
24%
Atomic Layer Epitaxy
8%
Band Gap
14%
Behavior as Electrode
15%
Breakdown Voltage
12%
Buffer Solution
21%
Chemical Passivation
13%
Compound Mobility
34%
Condensation
18%
Contact Resistance
22%
Cooling
22%
Dielectric Material
13%
Dioxygen
9%
Electrical Property
14%
Electroluminescence
12%
Electromagnetic Field
11%
Electron Mobility
34%
Epitaxial Film
12%
Etching
13%
Fiber
11%
Field Effect
18%
Flicker Noise
16%
Gas Sensor
10%
Interface State
8%
Leakage Current
27%
Liquid Film
52%
Metal
11%
Molecular Beam Epitaxy
13%
Nanorod
31%
Nitride
10%
Nonconductor
19%
Optical Property
9%
Oxidation Reaction
12%
Oxide
22%
Pentacene
9%
Photoluminescence
10%
Plasma Enhanced Chemical Vapour Deposition
11%
Quantum Dot
12%
Schottky Barrier
23%
Schottky Contact
33%
Semiconductor
12%
Solar Cell
17%
Surface
19%
Surface State
11%
Transconductance
36%
Voltage
38%
Wavelength
24%
White
11%
Zinc Oxide
19%
