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查看斯高帕斯 (Scopus) 概要
陳 志方
教授
微電子工程研究所
電話
886 6 2757575 ext 62395
電子郵件
jfchen
mail.ncku.edu
tw
網站
http://www.ee.ncku.edu.tw/subpage_div/teacher_new_2/index2.php?teacher_id=62
h-index
2651
引文
27
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
1995 …
2025
每年研究成果
概覽
指紋
網路
專案
(22)
研究成果
(122)
類似的個人檔案
(10)
監製作品
(22)
指紋
查看啟用 Jone-Fang Chen 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Engineering & Materials Science
Hot carriers
100%
Degradation
45%
Transistors
45%
Metals
37%
Light emitting diodes
36%
Oxide semiconductors
36%
Oxides
33%
Electric potential
31%
MOSFET devices
31%
Interface states
21%
Photodetectors
18%
Annealing
18%
FinFET
17%
Leakage currents
17%
Tin oxides
17%
Semiconductor materials
16%
Electromigration
14%
Telegraph
14%
Substrates
14%
Doping (additives)
13%
Nitrides
13%
Electrons
13%
Computer aided design
13%
Gate dielectrics
12%
Carrier lifetime
10%
Dark currents
10%
Field effect transistors
9%
Electric breakdown
9%
Electron injection
9%
Photoluminescence
9%
Static random access storage
8%
Epitaxial films
8%
Nanowires
8%
Capacitors
7%
Semiconductor quantum wells
7%
Plasmas
7%
MOS devices
7%
Zinc Selenide
7%
Threshold voltage
7%
Plasma density
7%
Vapor deposition
7%
Surface cleaning
7%
Electric fields
7%
Nitridation
7%
Hot electrons
7%
Transconductance
6%
Metallizing
6%
Defects
6%
Physics & Astronomy
metal oxide semiconductors
41%
transistors
27%
degradation
23%
light emitting diodes
16%
field effect transistors
16%
high voltages
14%
tin oxides
12%
indium oxides
11%
photometers
11%
metals
10%
electric potential
9%
annealing
9%
leakage
9%
isolation
8%
oxides
8%
CMOS
7%
computer aided design
6%
dark current
6%
injection
6%
traps
6%
electrodes
6%
implantation
5%
nitrides
5%
capacitors
5%
characterization
5%
carrier lifetime
5%
Chemical Compounds
Voltage
23%
Leakage Current
21%
Interface State
19%
Charge Pumping
10%
Epitaxial Film
10%
Simulation
10%
Dielectric Material
9%
Annealing
9%
Oxide
9%
Tunneling
9%
Transconductance
8%
Field Effect
8%
Hot Electron
8%
Drain Current
8%
Reduction
6%
Parasitic
6%
Semiconductor
6%
Avalanche Breakdown
6%
Mechanical Stress
6%
Breakdown Voltage
6%
Impact Ionization
6%
Capacitor
5%
Liquid Film
5%
Electric Field
5%
Photoluminescence
5%
Electron Particle
5%
Trap Density Measurement
5%
Purity
5%
Electrical Property
5%
Nanowire
5%
Molecular Beam Epitaxy
5%
