Kao-Shuo Chang

查看斯高帕斯 (Scopus) 概要

電話886 6 2757575 ext 62922
電子郵件kschangmail.ncku.edutw
網站https://ctrl2010.wixsite.com/44806

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每年研究成果

75 Article
7 Conference contribution
3 Conference article
2 Editorial
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7結果

篩選

2008
Combinatorial methodology for the exploration of metal gate electrodes on HfO₂ for the advanced gate stack
Chang, K. S., Green, M. L., Suehle, J., Hattrick-Simpersb, J., Takeuchi, I., Ohmori, K., Chikyow, T., De Gendt, S. & Majhi, P., 2008, ECS Transactions - Dielectrics for Nanosystems 3: Materials Science, Processing, Reliability, and Manufacturing. 2 編輯 p. 151-159 9 p. (ECS Transactions; 卷 13, 編號 2).
研究成果: Conference contribution
2007
Combinatorial methodologies applied to the advanced CMOS gate stack
Chang, K. S., Bassim, N. D., Schenck, P. K., Suehle, J., Takeuchi, I. & Green, M. L., 2007, CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2007 International Conference on Frontiers of Characterization and Metrology. p. 297-302 6 p. (AIP Conference Proceedings; 卷 931).
研究成果: Conference contribution

開啟存取
2006
A combinatorial study of metal gate/HfO₂ MOSCAPS
Green, M. L., Chang, K. S., Takeuchi, I. & Chikyow, T., 2006, Physics and Technology of High-k Gate Dielectrics 4. 3 編輯 Electrochemical Society Inc., p. 341-350 10 p. (ECS Transactions; 卷 3, 編號 3).
研究成果: Conference contribution
Controllability of flatband voltage in high-k gate stack structures - Remarkable advantages of la₂O₃ over HfO₂
Ohmori, K., Ahmet, P., Shiraishi, K., Yamabe, K., Watanabe, H., Akasaka, Y., Umezawa, N., Nakajima, K., Yoshitake, M., Nakayama, T., Chang, K. S., Kakushima, K., Nara, Y., Green, M. L., Iwai, H., Yamada, K. & Chikyow, T., 2006 1月 1, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society, p. 376-379 4 p. 4098113. (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).
研究成果: Conference contribution
1 引文斯高帕斯（Scopus）
Influences of annealing conditions on flatband voltage properties using continuously workfunction-tuned metal electrodes
Ohmori, K., Ahmet, P., Shiraishi, K., Watanabe, H., Akasaka, Y., Yamabe, K., Yoshitake, M., Chang, K. S., Green, M. L., Yamada, K. & Chikyow, T., 2006, 1st IEEE International Workshop on Nano CMOS, IEEE IWNC 2006. p. 160-162 3 p. 4570988. (2006 International Workshop on Nano CMOS - Proceedings, IWNC).
研究成果: Conference contribution
Wide controllability of flatband voltage in la₂O₃ gate stack structures - Remarkable advantages of la₂O₃ over HfO₂ -
Ohmori, K., Ahmet, P., Shiraishi, K., Yamabe, K., Watanabe, H., Akasaka, Y., Umezawa, N., Nakajima, K., Yoshitake, M., Nakayama, T., Chang, K. S., Kakushima, K., Nara, Y., Green, M. L., Iwai, H., Yamada, K. & Chikyow, T., 2006, Physics and Technology of High-k Gate Dielectrics 4. 3 編輯 Electrochemical Society Inc., p. 351-362 12 p. (ECS Transactions; 卷 3, 編號 3).
研究成果: Conference contribution
1 引文斯高帕斯（Scopus）
2003
Exploration of magnetoelectric thin-film sensors using superlattice composition spreads
Chang, K. S., Aronova, M. A., Gao, C., Lin, C. L., Simpers, J. H., Murakami, M. & Takeuchi, I., 2003, 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 286 1 p. 1272099. (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings).
研究成果: Conference contribution

張 高碩

研究成果

搜尋結果

Combinatorial methodology for the exploration of metal gate electrodes on HfO2 for the advanced gate stack

Combinatorial methodologies applied to the advanced CMOS gate stack

A combinatorial study of metal gate/HfO2 MOSCAPS

Controllability of flatband voltage in high-k gate stack structures - Remarkable advantages of la2O3 over HfO2

Influences of annealing conditions on flatband voltage properties using continuously workfunction-tuned metal electrodes

Wide controllability of flatband voltage in la2O3 gate stack structures - Remarkable advantages of la2O3 over HfO2 -

Exploration of magnetoelectric thin-film sensors using superlattice composition spreads

張高碩

Combinatorial methodology for the exploration of metal gate electrodes on HfO₂ for the advanced gate stack

A combinatorial study of metal gate/HfO₂ MOSCAPS

Controllability of flatband voltage in high-k gate stack structures - Remarkable advantages of la₂O₃ over HfO₂

Wide controllability of flatband voltage in la₂O₃ gate stack structures - Remarkable advantages of la₂O₃ over HfO₂ -