Kuo-Hsing Kao

Tang, Y. T., Fan, C. L., Kao, Y. C., Modolo, N., Su, C. J., Wu, T. L., Kao, K. H., Wu, P. J., Hsaio, S. W., Useinov, A., Su, P., Wu, W. F., Huang, G. W., Shieh, J. M., Yeh, W. K. & Wang, Y. H., 2019 六月, 2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., p. T222-T223 8776508. (Digest of Technical Papers - Symposium on VLSI Technology; 卷 2019-June).

研究成果: Conference contribution

Field effect transistors

Interfacial energy

Ferroelectricity

Ferroelectric materials

Capacitance

Demonstration of annealing-free metal-insulator-semiconductor (mis) ohmic contacts on a gan substrate using low work-function metal ytterbium (yb) and al₂o₃ interfacial layer

Wu, T. L., Tseng, Y. Y., Huang, C. F., Chen, Z. S., Lin, C. C., Chung, C. J., Huang, P. K. & Kao, K. H., 2019 五月 1, WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia. Institute of Electrical and Electronics Engineers Inc., 8760323. (WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia).

研究成果: Conference contribution

Ytterbium

Ohmic contacts

Demonstrations

Metals

Annealing

Impact of Semiconductor Permittivity Reduction on Electrical Characteristics of Nanoscale MOSFETs

Chen, S. H., Lian, S. W., Wu, T. R., Chang, T-R., Liou, J. M., Lu, D., Kao, K-H., Chen, N. Y., Lee, W. J. & Tsai, J. H., 2019 六月 1, 於 : IEEE Transactions on Electron Devices. 66, 6, p. 2509-2512 4 p., 8704283.

研究成果: Article

Permittivity

Semiconductor materials

Poisson equation

Threshold voltage

Screening

Voltage Transfer Characteristic Matching by Different Nanosheet Layer Numbers of Vertically Stacked Junctionless CMOS Inverter for SoP/3D-ICs applications

Sung, P. J., Chang, C. Y., Chen, L. Y., Kao, K. H., Su, C. J., Liao, T. H., Fang, C. C., Wang, C. J., Hong, T. C., Jao, C. Y., Hsu, H. S., Luo, S. X., Wang, Y. S., Huang, H. F., Li, J. H., Huang, Y. C., Hsueh, F. K., Wu, C. T., Huang, Y. M., Hou, F. J. 及其他16, Luo, G. L., Huang, Y. C., Shen, Y. L., Ma, W. C. Y., Huang, K. P., Lin, K. L., Samukawa, S., Li, Y., Huang, G. W., Lee, Y. J., Li, J. Y., Wu, W. F., Shieh, J. M., Chao, T. S., Yeh, W. K. & Wang, Y. H., 2019 一月 16, 2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., p. 21.4.1-21.4.4 8614553. (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2018-December).

研究成果: Conference contribution

Nanosheets

inverters

CMOS

Electric potential

electric potential

2 引文 (Scopus)

A comprehensive study of polymorphic phase distribution of ferroelectric-dielectrics and interfacial layer effects on negative capacitance FETs for Sub-5 nm node

Tang, Y. T., Su, C. J., Wang, Y. S., Kao, K. H., Wu, T. L., Sung, P. J., Hou, F. J., Wang, C. J., Yeh, M. S., Lee, Y. J., Wu, W. F., Huang, G. W., Shieh, J. M., Yeh, W. K. & Wang, Y. H., 2018 十月 25, 2018 IEEE Symposium on VLSI Technology, VLSI Technology 2018. Institute of Electrical and Electronics Engineers Inc., p. 45-46 2 p. 8510696. (Digest of Technical Papers - Symposium on VLSI Technology; 卷 2018-June).

研究成果: Conference contribution

Field effect transistors

Ferroelectric materials

Capacitance

Depolarization

Tensors