• 709 引文
  • 14 h-指數
20062020

Research output per year

如果您對這些純文本內容做了任何改變,很快就會看到。

個人檔案

學歷

  • 2013 比利時KULeuven大學博士

研究專長

  • Semiconductor Physics and Devices

經歷

  • 2009-2013 比利時校際微電子中心博士研究員
  • 2014~present 國立成功大學電機系助理教授

指紋 查看啟用 Kuo-Hsing Kao 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。

  • 5 類似的個人檔案

網路 國家層面的近期外部共同作業。通過按一下圓點深入探索詳細資料。

專案

研究成果

A Comprehensive Kinetical Modeling of Polymorphic Phase Distribution of Ferroelectric-Dielectrics and Interfacial Energy Effects on Negative Capacitance FETs

Tang, Y. T., Fan, C. L., Kao, Y. C., Modolo, N., Su, C. J., Wu, T. L., Kao, K. H., Wu, P. J., Hsaio, S. W., Useinov, A., Su, P., Wu, W. F., Huang, G. W., Shieh, J. M., Yeh, W. K. & Wang, Y. H., 2019 六月, 2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., p. T222-T223 8776508. (Digest of Technical Papers - Symposium on VLSI Technology; 卷 2019-June).

研究成果: Conference contribution

  • Demonstration of annealing-free metal-insulator-semiconductor (mis) ohmic contacts on a gan substrate using low work-function metal ytterbium (yb) and al2o3 interfacial layer

    Wu, T. L., Tseng, Y. Y., Huang, C. F., Chen, Z. S., Lin, C. C., Chung, C. J., Huang, P. K. & Kao, K. H., 2019 五月, WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia. Institute of Electrical and Electronics Engineers Inc., 8760323. (WiPDA Asia 2019 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia).

    研究成果: Conference contribution

  • Fabrication of omega-gated negative capacitance finfets and SRAM

    Sung, P. J., Su, C. J., Lu, D. D., Luo, S. X., Kao, K. H., Ciou, J. Y., Jao, C. Y., Hsu, H. S., Wang, C. J., Hong, T. C., Liao, T. H., Fang, C. C., Wang, Y. S., Huang, H. F., Li, J. H., Huang, Y. C., Hsueh, F. K., Wu, C. T., Ma, W. C. Y., Huang, K. P. 及其他6, Lee, Y. J., Chao, T. S., Li, J. Y., Wu, W. F., Yeh, W. K. & Wang, Y. H., 2019 四月, 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019. Institute of Electrical and Electronics Engineers Inc., 8804663. (2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019).

    研究成果: Conference contribution

  • Impact of Semiconductor Permittivity Reduction on Electrical Characteristics of Nanoscale MOSFETs

    Chen, S. H., Lian, S. W., Wu, T. R., Chang, T. R., Liou, J. M., Lu, D. D., Kao, K. H., Chen, N. Y., Lee, W. J. & Tsai, J. H., 2019 六月, 於 : IEEE Transactions on Electron Devices. 66, 6, p. 2509-2512 4 p., 8704283.

    研究成果: Article

  • Voltage Transfer Characteristic Matching by Different Nanosheet Layer Numbers of Vertically Stacked Junctionless CMOS Inverter for SoP/3D-ICs applications

    Sung, P. J., Chang, C. Y., Chen, L. Y., Kao, K. H., Su, C. J., Liao, T. H., Fang, C. C., Wang, C. J., Hong, T. C., Jao, C. Y., Hsu, H. S., Luo, S. X., Wang, Y. S., Huang, H. F., Li, J. H., Huang, Y. C., Hsueh, F. K., Wu, C. T., Huang, Y. M., Hou, F. J. 及其他16, Luo, G. L., Huang, Y. C., Shen, Y. L., Ma, W. C. Y., Huang, K. P., Lin, K. L., Samukawa, S., Li, Y., Huang, G. W., Lee, Y. J., Li, J. Y., Wu, W. F., Shieh, J. M., Chao, T. S., Yeh, W. K. & Wang, Y. H., 2019 一月 16, 2018 IEEE International Electron Devices Meeting, IEDM 2018. Institute of Electrical and Electronics Engineers Inc., p. 21.4.1-21.4.4 8614553. (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2018-December).

    研究成果: Conference contribution

  • 3 引文 斯高帕斯(Scopus)

    論文

    Fabrication and characterization of IGZO thin film transistors

    作者: 俊成, 林., 2016 八月 23

    監督員: Kao, K. (Supervisor)

    學生論文: Master's Thesis

    Fermi-Level Pinning Effect Analysis and Simulation of Dopingless FETs with Metal-Insulator-Semiconductor Contacts

    作者: 亮瑜, 陳., 2018 六月 26

    監督員: Kao, K. (Supervisor)

    學生論文: Master's Thesis

    Gate Oxide scaling Effect on MOSFETs and TFETs by TCAD Simulations

    作者: 磊安, 尤., 2018 八月 15

    監督員: Kao, K. (Supervisor)

    學生論文: Master's Thesis

    Investigation on Surface Cleaning Interfacial Layer Formation and Ferroelectric Properties on Germanium Substrates

    作者: 昱舜, 王., 2018 九月 6

    監督員: Kao, K. (Supervisor)

    學生論文: Master's Thesis