• 2587 引文
  • 26 h-指數
1980 …2020

Research output per year

如果您對這些純文本內容做了任何改變,很快就會看到。

研究成果

2001
3 引文 斯高帕斯(Scopus)
5 引文 斯高帕斯(Scopus)

Electrical properties and modeling of ultrathin impurity-doped silicon dioxides

Chang, W. J., Houng, M. P. & Wang, Y. H., 2001 十一月 15, 於 : Journal of Applied Physics. 90, 10, p. 5171-5179 9 p.

研究成果: Article

11 引文 斯高帕斯(Scopus)
8 引文 斯高帕斯(Scopus)

GaAs MOSFET's fabrication with a selective liquid phase oxidized gate

Wu, J. Y., Wang, H. H., Wang, Y. H. & Houng, M. P., 2001 四月 1, 於 : IEEE Transactions on Electron Devices. 48, 4, p. 634-637 4 p.

研究成果: Article

22 引文 斯高帕斯(Scopus)

Properties of GaAs MOSFET with gate dielectric grown by liquid-phase selective oxidation method

Wu, J. Y., Sze, P. W., Deng, Y. M., Huang, G. W., Wang, Y. H. & Houng, M. P., 2001 五月 1, 於 : Solid-State Electronics. 45, 5, p. 635-638 4 p.

研究成果: Article

2 引文 斯高帕斯(Scopus)
20 引文 斯高帕斯(Scopus)

Temperature effect on gate leakage currents in gate dielectric films of GaAs MOSFET

Wu, J. Y., Sze, P. W., Wang, Y. H. & Houng, M. P., 2001 十二月 1, 於 : Solid-State Electronics. 45, 12, p. 1999-2003 5 p.

研究成果: Article

6 引文 斯高帕斯(Scopus)
2 引文 斯高帕斯(Scopus)
2000

A GaAs device isolation technique by liquid phase chemical-enhanced oxidation

Wang, H. H., Chou, D. W., Wu, J. Y., Wang, Y-H. & Houng, M., 2000, ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference. IEEE Computer Society, p. 432-435 4 p. 1503737

研究成果: Conference contribution

Depletion-mode GaAs MOSFET with a low temperature selective grown oxide gate

Wu, J. Y., Wang, H. H., Sze, P. W., Wang, Y. H. & Houng, M. P., 2000 十二月 1, p. 149-154. 6 p.

研究成果: Paper

Effect of crystal orientation and doping on the activation energy for GaAs oxide growth by liquid phase method

Wang, H. H., Chou, D. W., Wu, J. Y., Wang, Y. H. & Houng, M. P., 2000 三月, 於 : Journal of Applied Physics. 87, 5, p. 2629-2633 5 p.

研究成果: Article

17 引文 斯高帕斯(Scopus)
3 引文 斯高帕斯(Scopus)

Heat generation approximation in modulation-doped field-effect transistors by the energy relaxation between carriers and phonons

Houng, M. P., Wang, Y. H., Chong, K. K., Chu, C. H., Hung, C. I. & Miaw, J. W., 2000 九月 1, 於 : Journal of Applied Physics. 88, 5, p. 2553-2559 7 p.

研究成果: Article

3 引文 斯高帕斯(Scopus)

Quality optimization of liquid phase deposition SiO2 films on gallium arsenide

Houng, M. P., Wang, Y. H., Huang, C. J., Huang, S. P. & Horng, J. H., 2000 十一月 1, 於 : Solid-State Electronics. 44, 11, p. 1917-1923 7 p.

研究成果: Article

44 引文 斯高帕斯(Scopus)
9 引文 斯高帕斯(Scopus)
1999
5 引文 斯高帕斯(Scopus)
91 引文 斯高帕斯(Scopus)
10 引文 斯高帕斯(Scopus)
26 引文 斯高帕斯(Scopus)
5 引文 斯高帕斯(Scopus)
35 引文 斯高帕斯(Scopus)
5 引文 斯高帕斯(Scopus)
2 引文 斯高帕斯(Scopus)
22 引文 斯高帕斯(Scopus)

Properties of GaAs Oxides Prepared by Liquid Phase Chemical-Enhanced Technique

Wang, H. H., Chou, D. W., Wang, Y. H. & Houng, M. P., 1999 十二月 1, 於 : Physica Scripta T. 79, p. 239-242 4 p.

研究成果: Article

15 引文 斯高帕斯(Scopus)
1998

A DC model for asymmetric trapezoidal gate MOSFET's in strong inversion

Wong, S. C., Hsu, S. Y., Wang, Y. H., Houng, M. P. & Cho, S. K., 1998 十二月 1, 於 : IEEE Transactions on Electron Devices. 45, 7, p. 1459-1467 9 p.

研究成果: Article

7 引文 斯高帕斯(Scopus)

Analytic model for asymmetric trapezoidal-gate MOSFET

Kao, C. H., Cho, S. K., Wei, C. T., Wong, S. C., Houng, M. & Wang, Y-H., 1998 十二月 1, p. 420-423. 4 p.

研究成果: Paper

1 引文 斯高帕斯(Scopus)

An analytical subthreshold current model for GaAs Mesfet's

Chiang, T. K., Wang, Y. H. & Houng, M. P., 1998 十月 1, 於 : Solid-State Electronics. 42, 10, p. 1767-1773 7 p.

研究成果: Article

9 引文 斯高帕斯(Scopus)
2 引文 斯高帕斯(Scopus)

Improved formation of silicon dioxide films in liquid phase deposition

Huang, C. J., Houng, M., Wang, Y-H., Wang, N. F. & Chen, J. R., 1998 一月 1, 於 : Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 16, 4, p. 2646-2652 7 p.

研究成果: Article

31 引文 斯高帕斯(Scopus)
52 引文 斯高帕斯(Scopus)
20 引文 斯高帕斯(Scopus)
1997

A model for heterostructure-emitter bipolar transistors

Lew, K. L., Chiang, T. K., Wang, Y. H. & Houng, M. P., 1997 九月, 於 : Solid-State Electronics. 41, 9, p. 1337-1344 8 p.

研究成果: Article

2 引文 斯高帕斯(Scopus)

Effects of substrate preheating for the growth of ZnxCd1 - XTe/(1 0 0)GaAs by MOCVD

Sze, P. W., Wang, N. F., Houng, M. P., Wang, Y. H., Hwang, J. S., Chou, W. Y., Cherng, Y. T., Wang, C. H. & Chiang, C. D., 1997 九月, 於 : Journal of Crystal Growth. 180, 2, p. 177-184 8 p.

研究成果: Article

6 引文 斯高帕斯(Scopus)

Extremely low temperature formation of silicon dioxide on gallium arsenide

Houng, M. P., Huang, C. J., Wang, Y. H., Wang, N. F. & Chang, W. J., 1997 十二月 1, 於 : Journal of Applied Physics. 82, 11, p. 5788-5792 5 p.

研究成果: Article

31 引文 斯高帕斯(Scopus)
3 引文 斯高帕斯(Scopus)
18 引文 斯高帕斯(Scopus)
1996

Characteristics of ZnCdTe grown on (100) GaAs substrate by MOCVD

Sze, P. W., Wang, N. F., Houng, M. P., Wang, Y. H., Cherng, Y. T. & Wang, C. H., 1996 十一月, 於 : Journal of Crystal Growth. 169, 1, p. 27-32 6 p.

研究成果: Article

4 引文 斯高帕斯(Scopus)
5 引文 斯高帕斯(Scopus)
2 引文 斯高帕斯(Scopus)
1995

Broadening factor due to electron-phonon collisions in semiconductor quantum wells

Houng, M. P., Wang, Y. H. & Chu, C. H., 1995 十二月 1, 於 : Journal of Applied Physics. 77, 12, p. 6338-6344 7 p.

研究成果: Article

8 引文 斯高帕斯(Scopus)

Characteristics of MOCVD-grown high-quality CdTe layers on GaAs substrates

Sze, P. W., Yarn, K. F., Wang, Y-H., Houng, M. & Chen, G. L., 1995 一月 1, 於 : Active and Passive Electronic Components. 18, 4, p. 247-258 12 p.

研究成果: Article

3 引文 斯高帕斯(Scopus)
3 引文 斯高帕斯(Scopus)

The effects of biaxial strain on the optical properties of quantum well structures

Houng, M. P., Wang, Y. H., Chong, K. K., Liu, S. S. & Hsu, J. S., 1995 十一月 30, 於 : Materials Chemistry & Physics. 42, 3, p. 195-200 6 p.

研究成果: Article

1 引文 斯高帕斯(Scopus)