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研究成果 1980 2019

篩選
Paper
Paper
1 引文 (Scopus)

Analytic model for asymmetric trapezoidal-gate MOSFET

Kao, C. H., Cho, S. K., Wei, C. T., Wong, S. C., Houng, M. & Wang, Y-H., 1998 十二月 1, p. 420-423. 4 p.

研究成果: Paper

Capacitance
Drain current
Poisson equation
Green's function
Polynomials

Depletion-mode GaAs MOSFET with a low temperature selective grown oxide gate

Wu, J. Y., Wang, H. H., Sze, P. W., Wang, Y. H. & Houng, M. P., 2000 十二月 1, p. 149-154. 6 p.

研究成果: Paper

Masks
Oxidation
Oxides
Cutoff frequency
Transconductance
1 引文 (Scopus)
Semiconductor quantum wells
Modulators
Electric potential
Insertion losses
Electric fields

GROWTH AND PROPERTIES OF GaP/Si DEVICE BY MOCVD.

Su, Y. K., Chang, C. Y., Wu, T. S., Lee, M. K., Houng, M. & Chen, L. G., 1981 十二月 1, p. 387-392. 6 p.

研究成果: Paper

Gallium phosphide
Metallorganic chemical vapor deposition
Heterojunctions
Chemical vapor deposition
Single crystals
3 引文 (Scopus)

InGaP/InGaAs/GaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor with a liquid phase oxidized InGaP gate

Lee, K. W., Lin, Y. J., Yang, N. Y., Lee, Y. C., Sze, P. W., Wang, Y-H. & Houng, M., 2004 十二月 1, p. 2301-2304. 4 p.

研究成果: Paper

High electron mobility transistors
Liquids
Metals
Gate dielectrics
Electric breakdown
Resonant tunneling
Carrier transport
Current voltage characteristics
indium arsenide