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查看斯高帕斯 (Scopus) 概要
王 水進
教授
微電子工程研究所
電話
886 6 2757575 ext 62351
電子郵件
sjwang
mail.ncku.edu
tw
網站
http://www.ee.ncku.edu.tw/subpage_div/teacher_new_2/index2.php?teacher_id=46
h-index
2015
引文
24
h-指數
按照存儲在普爾(Pure)的出版物數量及斯高帕斯(Scopus)引文計算。
1984 …
2024
每年研究成果
概覽
指紋
網路
專案
(41)
研究成果
(284)
類似的個人檔案
(6)
監製作品
(37)
指紋
查看啟用 Shui-Jinn Wang 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Engineering & Materials Science
Thin film transistors
100%
Zinc oxide
98%
Light emitting diodes
93%
Gate dielectrics
87%
Nanowires
76%
Annealing
52%
Substrates
50%
Oxide films
49%
Oxides
47%
Electric potential
37%
Heterojunctions
37%
Metals
37%
Threshold voltage
37%
Diodes
35%
Temperature
34%
Leakage currents
34%
Nanosheets
32%
Sputtering
31%
Amorphous films
31%
Etching
30%
Hole mobility
29%
Diffusion barriers
28%
Ohmic contacts
28%
Excimer lasers
27%
Silicon
27%
Metallizing
25%
Rapid thermal annealing
24%
Molecular beam epitaxy
23%
Nanostructures
23%
Nickel
22%
Lasers
21%
pH sensors
20%
Photodetectors
20%
Polysilicon
19%
Plasmas
19%
Schottky barrier diodes
18%
Transistors
17%
Atmospheric pressure
17%
Electrodes
17%
Thermodynamic stability
16%
Electric properties
16%
Doping (additives)
15%
Resonant tunneling diodes
15%
Ions
15%
Physics & Astronomy
light emitting diodes
76%
zinc oxides
54%
transistors
41%
nanowires
41%
thin films
32%
output
31%
performance
28%
indium oxides
26%
gallium oxides
24%
etching
22%
electric potential
21%
metals
21%
indium
21%
fabrication
18%
annealing
18%
field effect transistors
17%
electric contacts
17%
nickel
16%
electroplating
15%
conduction
15%
preparation
15%
tungsten oxides
15%
barrier layers
14%
diodes
14%
sensors
13%
photometers
13%
Schottky diodes
13%
heterojunctions
12%
oxide films
11%
silicon
11%
threshold voltage
11%
lasers
10%
nanotubes
10%
very large scale integration
10%
sputtering
9%
light emission
9%
low voltage
9%
boron
9%
field emission
9%
transconductance
9%
CMOS
8%
oxygen
8%
molecular beam epitaxy
8%
tungsten carbides
8%
electrodes
8%
tunnels
8%
hafnium oxides
8%
nickel oxides
8%
augmentation
8%
atmospheric pressure
7%
Chemical Compounds
Voltage
41%
Work Function
31%
Dielectric Material
29%
Zinc Oxide
27%
Liquid Film
27%
Oxide
25%
Nanowire
24%
Leakage Current
22%
Compound Mobility
21%
Diffusion Barrier
20%
Annealing
20%
Rapid Thermal Annealing
19%
Etching
18%
Amorphous Material
17%
Excimer
13%
Spreading
12%
Hole Mobility
12%
Semiconductor
12%
Sputtering
12%
Surface
11%
Simulation
11%
Nanomaterial
11%
Plasma
11%
Nanosheet
11%
Laser Annealing
10%
Electron Mobility
10%
Electrical Property
10%
Field Effect
10%
Molecular Beam Epitaxy
10%
Thermal Stability
9%
Diffusion
9%
Metal
9%
Length
9%
Optoelectronics
9%
Tungsten Carbide
8%
Metal Oxide
7%
Hydrothermal Method
7%
Epitaxial Growth
7%
Tungsten Oxide
7%
Grain Boundary
7%
Dioxygen
7%
Transconductance
6%
Interface State
6%
Jet
6%
Oxalonitrile
6%
Electrodeposition
6%
Plasma Enhanced Chemical Vapour Deposition
6%
Solid Phase Epitaxy
5%
Pressure
5%