賴 韋志

Professor

  • 4449 引文
  • 33 h-指數
19982020
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研究成果 1998 2019

篩選
Article
Article
218 引文 (Scopus)

400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes

Chang, S. J., Kuo, C. H., Su, Y. K., Wu, L. W., Sheu, J. K., Wen, T. C., Lai, W. C., Chen, J. F. & Tsai, J. M., 2002 七月 1, 於 : IEEE Journal on Selected Topics in Quantum Electronics. 8, 4, p. 744-748 5 p.

研究成果: Article

Light emitting diodes
light emitting diodes
barrier layers
Vapor phase epitaxy
output

Abnormal unsaturated output characteristics in a-InGaZnO TFTs with light shielding layer

Chen, H. C., Zhou, K. J., Chen, P. H., Chen, G. F., Huang, S. P., Chen, J. J., Kuo, C. W., Tsao, Y. C., Tai, M. C., Chu, A. K., Lai, W. C. & Chang, T. C., 2019 八月, 於 : IEEE Electron Device Letters. 40, 8, p. 1281-1284 4 p., 8736827.

研究成果: Article

Thin film transistors
Shielding
Electric grounding
Threshold voltage
Computer aided design
5 引文 (Scopus)

AlGaN-based ultraviolet photodetector with micropillar structures

Lai, W-C., Peng, L. C., Chen, C. C., Sheu, J-K. & Shei, S. C., 2010 三月 26, 於 : Applied Physics Letters. 96, 10, 102104.

研究成果: Article

photometers
templates
cathodoluminescence
wavelengths
valleys
14 引文 (Scopus)

AlGaN ultraviolet metal-semiconductor-metal photodetectors grown on Si substrates

Chang, S-J., Ko, T. K., Sheu, J-K., Shei, S. C., Lai, W-C., Chiou, Y. Z., Lin, Y-C., Chang, C. S., Chen, W. S. & Shen, C. F., 2007 四月 15, 於 : Sensors and Actuators, A: Physical. 135, 2, p. 502-506 5 p.

研究成果: Article

Photodetectors
caps
photometers
Metals
Semiconductor materials
22 引文 (Scopus)

AlInN resistive ammonia gas sensors

Weng, W. Y., Chang, S. J., Hsueh, T. J., Hsu, C. L., Li, M. J. & Lai, W. C., 2009 六月 18, 於 : Sensors and Actuators, B: Chemical. 140, 1, p. 139-142 4 p.

研究成果: Article

Chemical sensors
Ammonia
ammonia
Gases
sensors
4 引文 (Scopus)
gallium nitrides
aluminum nitrides
photodiodes
dark current
rejection

An Energy-Band Model for Dual-Gate-Voltage Sweeping in Hydrogenated Amorphous Silicon Thin-Film Transistors

Chen, G. F., Chen, H. C., Chang, T. C., Huang, S. P., Chen, H. M., Liao, P. Y., Chen, J. J., Kuo, C. W., Lai, W. C., Chu, A. K., Lin, S. C., Yeh, C. Y., Chang, C. S., Tsai, C. M., Yu, M. C. & Zhang, S., 2019 六月, 於 : IEEE Transactions on Electron Devices. 66, 6, p. 2614-2619 6 p., 8689093.

研究成果: Article

Thin film transistors
Amorphous silicon
Band structure
Electric potential
Electrons
30 引文 (Scopus)

A novel method to realize InGaN self-assembled quantum dots by metalorganic chemical vapor deposition

Ji, L. W., Su, Y. K., Chang, S. J., Wu, L. W., Fang, T. H., Xue, Q. K., Lai, W. C. & Chiou, Y. Z., 2003 九月 1, 於 : Materials Letters. 57, 26-27, p. 4218-4221 4 p.

研究成果: Article

Metallorganic chemical vapor deposition
Semiconductor quantum dots
metalorganic chemical vapor deposition
quantum dots
optoelectronic devices
8 引文 (Scopus)

Be diffusion in GaN

Chang, S-J., Lai, W-C., Chen, J-F., Chen, S. C., Huang, B. R., Liu, C. H. & Liaw, U. H., 2003 十一月 1, 於 : Materials Characterization. 49, 4, p. 337-341 5 p.

研究成果: Article

Beryllium
beryllium
Photoluminescence
photoluminescence
Temperature
6 引文 (Scopus)

Catalyst-free ZnO nanowires grown on a-plane GaN

Chen, C. W., Pan, C. J., Tsao, F. C., Liu, Y. L., Kuo, C. W., Kuo, C. H., Chi, G. C., Chen, P. H., Lai, W. C., Hsueh, T. H., Tun, C. J., Chang, C. Y., Pearton, S. J. & Ren, F., 2010 二月 4, 於 : Vacuum. 84, 6, p. 803-806 4 p.

研究成果: Article

Nanowires
Chemical vapor deposition
nanowires
templates
Organic Chemicals
16 引文 (Scopus)

Characteristics of InGaN-based concentrator solar cells operating under 150X solar concentration

Yang, C. C., Jang, C. H., Sheu, J-K., Lee, M. L., Tu, S. J., Huang, F. W., Yeh, Y. H. & Lai, W-C., 2011 七月 4, 於 : Optics Express. 19, 104, p. A695-A700

研究成果: Article

photovoltaic cells
concentrators
solar cells
sun
sapphire
3 引文 (Scopus)

Characterization of gallium-doped zinc oxide contact on n-type gallium nitride epitaxial layers

Sheu, J-K., Chang, K. H., Lee, M. L., Huang, J. F., Kang, K. S., Wang, W. L., Lai, W-C. & Hsueh, T. H., 2009 七月 22, 於 : Journal of the Electrochemical Society. 156, 8

研究成果: Article

Zinc Oxide
Gallium nitride
Gallium
Epitaxial layers
Zinc oxide
36 引文 (Scopus)

Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer

Lee, M. L., Sheu, J. K., Lai, W. C., Su, Y. K., Chang, S. J., Kao, C. J., Tun, C. J., Chen, M. G., Chang, W. H., Chi, G. C. & Tsai, J. M., 2003 八月 1, 於 : Journal of Applied Physics. 94, 3, p. 1753-1757 5 p.

研究成果: Article

caps
photometers
time constant
photodiodes
nitrides
3 引文 (Scopus)

Characterization of Mg-doped AlInN annealed in nitrogen and oxygen ambients

Cheng, A. T., Su, Y. K., Lai, W-C., Chen, Y. Z. & Kuo, S. Y., 2008 八月 1, 於 : Journal of Electronic Materials. 37, 8, p. 1070-1075 6 p.

研究成果: Article

Nitrogen
Heat treatment
Oxygen
nitrogen
Indium
6 引文 (Scopus)

Characterization of n-gan with naturally textured surface for photoelectrochemical hydrogen generation

Liu, S. Y., Sheu, J. K., Ye, J. C., Tu, S. J., Hsu, C. K., Lee, M. L., Kuo, C. H. & Lai, W. C., 2010 十一月 24, 於 : Journal of the Electrochemical Society. 157, 12, p. H1106-H1109

研究成果: Article

Hydrogen
hydrogen
Ohmic contacts
Epitaxial layers
electric contacts
25 引文 (Scopus)

Comparison of low-temperature GaN, SiO 2, and SiN x as gate insulators on AlGaNGaN heterostructure field-effect transistors

Kao, C. J., Chen, M. C., Tun, C. J., Chi, G. C., Sheu, J. K., Lai, W. C., Lee, M. L., Ren, F. & Pearton, S. J., 2005 九月 15, 於 : Journal of Applied Physics. 98, 6, 064506.

研究成果: Article

field effect transistors
insulators
passivity
nitrides
surface layers
1 引文 (Scopus)

Controlling Surface Morphology and Circumventing Secondary Phase Formation in Non-polar m-GaN by Tuning Nitrogen Activity

Chang, C. W., Wadekar, P. V., Guo, S. S., Cheng, Y. J., Chou, M., Huang, H. C., Hsieh, W. C., Lai, W. C., Chen, Q. Y. & Tu, L. W., 2018 一月 1, 於 : Journal of Electronic Materials. 47, 1, p. 359-367 9 p.

研究成果: Article

Gallium nitride
gallium nitrides
Surface morphology
Nitrogen
Tuning
3 引文 (Scopus)

Conversion efficiency improvement of InGaN/GaN multiple-quantum-well solar cells with Ex Situ AlN nucleation layer

Yu, C. T., Lai, W. C., Yen, C. H., Chang, C. W., Tu, L. W. & Chang, S. J., 2015 五月 1, 於 : IEEE Transactions on Electron Devices. 62, 5, p. 1473-1477 5 p., 7078911.

研究成果: Article

Semiconductor quantum wells
Conversion efficiency
Solar cells
Nucleation
Sun
25 引文 (Scopus)
interlayers
solar cells
room temperature
volatile organic compounds
sulfonates
3 引文 (Scopus)

Cyclical Annealing Technique to Enhance Reliability of Amorphous Metal Oxide Thin Film Transistors

Chen, H. C., Chang, T. C., Lai, W. C., Chen, G. F., Chen, B. W., Hung, Y. J., Chang, K. J., Cheng, K. C., Huang, C. S., Chen, K. K., Lu, H. H. & Lin, Y. H., 2018 八月 8, 於 : ACS Applied Materials and Interfaces. 10, 31, p. 25866-25870 5 p.

研究成果: Article

Thin film transistors
Oxide films
Metals
Annealing
Zinc Oxide
4 引文 (Scopus)

DC characteristics improvement of recessed gate GaN-based HFETs grown by MOCVD

Cheng, A. T., Su, Y. K., Lai, W. C. & Huang, C. H., 2007 一月 1, 於 : Journal of Crystal Growth. 298, SPEC. ISS, p. 848-851 4 p.

研究成果: Article

Metallorganic chemical vapor deposition
High electron mobility transistors
metalorganic chemical vapor deposition
field effect transistors
direct current
58 引文 (Scopus)

Demonstration of GaN-based solar cells with GaN/InGaN superlattice absorption layers

Sheu, J-K., Yang, C. C., Tu, S. J., Chang, K. H., Lee, M. L., Lai, W-C. & Peng, L. C., 2009 一月 30, 於 : IEEE Electron Device Letters. 30, 3, p. 225-227 3 p.

研究成果: Article

Photovoltaic effects
Metallorganic vapor phase epitaxy
Open circuit voltage
Leakage currents
Short circuit currents
10 引文 (Scopus)

Design of Hole-Blocking and Electron-Blocking Layers in AlxGa1-xN-Based UV Light-Emitting Diodes

Shih, Y. H., Chang, J. Y., Sheu, J-K., Kuo, Y. K., Chen, F. M., Lee, M. L. & Lai, W-C., 2016 三月 1, 於 : IEEE Transactions on Electron Devices. 63, 3, p. 1141-1147 7 p., 7399737.

研究成果: Article

Diodes
Electrons
Light emitting diodes
Chemical analysis
Valence bands
1 引文 (Scopus)

Double superstructures in InGaN/GaN nano-pyramid arrays

Chang, C. Y., Li, H., Hong, K. B., Yang, Y. Y., Lai, W. C. & Lu, T. C., 2015 八月 11, 於 : Superlattices and Microstructures. 86, p. 275-279 5 p.

研究成果: Article

pyramids
Semiconductor quantum wells
Stark effect
Indium
Quantum confinement
6 引文 (Scopus)

Dual-wavelength GaN-based LEDs grown on truncated hexagonal pyramids formed by selective-area regrowth on si-implanted GaN templates

Lee, M. L., Yeh, Y. H., Tu, S. J., Chen, P. C., Wu, M. J., Lai, W. C. & Sheu, J. K., 2013 九月 9, 於 : Optics Express. 21, 105, p. A864-A871

研究成果: Article

pyramids
light emitting diodes
templates
wavelengths
cathodoluminescence
8 引文 (Scopus)
caps
heterojunctions
field effect transistors
electrical resistivity
plasma etching
48 引文 (Scopus)
Schottky diodes
caps
leakage
vapor phase epitaxy
retarding
32 引文 (Scopus)
Light emitting diodes
light emitting diodes
current distribution
chips
Electrodes
37 引文 (Scopus)
Electrostatic discharge
Light emitting diodes
endurance
light emitting diodes
electrostatics
spacers
Semiconductor quantum wells
Light emitting diodes
light emitting diodes
quantum wells
12 引文 (Scopus)
light emitting diodes
injection
electrons
output
power efficiency
6 引文 (Scopus)
Aluminum Oxide
Sapphire
Light emitting diodes
sapphire
light emitting diodes
6 引文 (Scopus)

Effects of leakage current and Schottky-like ohmic contact on the characterization of Al0.17Ga0.83N/GaN HBTs

Hsueh, K. P., Hsin, Y. M., Sheu, J-K., Lai, W-C., Tun, C. J., Hsu, C. H. & Lin, B. H., 2007 七月 1, 於 : Solid-State Electronics. 51, 7, p. 1073-1078 6 p.

研究成果: Article

Ohmic contacts
Heterojunction bipolar transistors
bipolar transistors
Leakage currents
heterojunctions
3 引文 (Scopus)
Vapors
Annealing
Temperature
Energy gap
Impurities

Efficiency enhancement of III-nitride light-emitting diodes with strain-compensated thin-barrier InGaN/AlN/GaN multiple quantum wells

Tsai, C. M., Chang, C. S., Xu, Z., Huang, W. P., Lai, W-C. & Bow, J. S., 2019 四月 15, 於 : OSA Continuum. 2, 4, p. 1207-1214 8 p.

研究成果: Article

Gallium nitride
Indium
Aluminum nitride
gallium nitrides
aluminum nitrides

Efficiency improvement of short-period InGaN/GaN multiple-quantum well solar cells with H2 in the GaN cap layer

Lai, W-C., Yang, Y. Y. & Horng, R. H., 2013 十二月 2, 於 : IEEE/OSA Journal of Display Technology. 9, 12, p. 953-956 4 p., 6542659.

研究成果: Article

caps
Semiconductor quantum wells
Solar cells
solar cells
quantum wells
7 引文 (Scopus)
fullerenes
heterojunctions
solar cells
methylidyne
electrodes
4 引文 (Scopus)

Electrical properties of multiple high-dose Si implantation in p-GaN

Lai, W-C., Yokoyama, M., Tsai, C. C., Chang, C. S., Guo, J. D., Tsang, J. S., Chan, S. H. & Chang, C. Y., 1999 一月 1, 於 : Japanese Journal of Applied Physics, Part 2: Letters. 38, 7 B

研究成果: Article

Ion implantation
implantation
Electric properties
electrical properties
Annealing
3 引文 (Scopus)

Electrical properties of the Si implantation in Mg doped p-GaN

Lai, W-C., Yokoyama, M., Tsai, C. C., Chang, C. S., Guo, J. D., Tsang, J. S. & Chan, S. H., 1999 一月 1, 於 : Physica Status Solidi (B) Basic Research. 216, 1, p. 561-565 5 p.

研究成果: Article

implantation
Electric properties
electrical properties
Annealing
Activation energy
7 引文 (Scopus)

Electroluminescence of ZnO nanocrystal in sputtered ZnO-SiO2 nanocomposite light-emitting devices

Chen, J. T., Lai, W-C., Chen, C. H., Yang, Y. Y., Sheu, J-K. & Lai, L. W., 2011 六月 6, 於 : Optics Express. 19, 12, p. 11873-11879 7 p.

研究成果: Article

electroluminescence
nanocomposites
nanocrystals
distributing
radiative recombination
33 引文 (Scopus)
Electroluminescence
Semiconductor quantum wells
Light emitting diodes
light emitting diodes
quantum wells
86 引文 (Scopus)

Enhanced efficiency of GaN-based light-emitting diodes with periodic textured Ga-doped ZnO transparent contact layer

Sheu, J. K., Lu, Y. S., Lee, M. L., Lai, W. C., Kuo, C. H. & Tun, C. J., 2007 八月 2, 於 : Applied Physics Letters. 90, 26, 263511.

研究成果: Article

light emitting diodes
indium oxides
tin oxides
composite materials
augmentation
6 引文 (Scopus)

Enhanced internal quantum efficiency in graphene/InGaN multiple-quantum- well hybrid structures

Huang, H. M., Chang, C. Y., Hsu, Y. S., Lu, T. C., Lan, Y. P. & Lai, W. C., 2012 八月 6, 於 : Applied Physics Letters. 101, 6, 061905.

研究成果: Article

hybrid structures
quantum efficiency
graphene
quantum wells
radiative recombination
8 引文 (Scopus)

Enhanced light output of GaN-based light-emitting diodes with embedded voids formed on Si-implanted GaN layers

Sheu, J-K., Tu, S. J., Lee, M. L., Yeh, Y. H., Yang, C. C., Huang, F. W., Lai, W-C., Chen, C. W. & Chi, G. C., 2011 十月 1, 於 : IEEE Electron Device Letters. 32, 10, p. 1400-1402 3 p., 5967887.

研究成果: Article

Light emitting diodes
Air
Epitaxial layers
Photons
54 引文 (Scopus)

Enhanced output power in GaN-based LEDs with naturally textured surface grown by MOCVD

Tsai, C. M., Sheu, J. K., Lai, W. C., Hsu, Y. P., Wang, P. T., Kuo, C. T., Kuo, C. W., Chang, S. J. & Su, Y. K., 2005 七月 1, 於 : IEEE Electron Device Letters. 26, 7, p. 464-466 3 p.

研究成果: Article

Metallorganic chemical vapor deposition
Light emitting diodes
Magnesium
Surface treatment
Electric potential
6 引文 (Scopus)

Enhanced output power of GaN-based LEDs with embedded AlGaN pyramidal shells

Tu, S. J., Sheu, J-K., Lee, M. L., Yang, C. C., Chang, K. H., Yeh, Y. H., Huang, F. W. & Lai, W-C., 2011 六月 20, 於 : Optics Express. 19, 13, p. 12719-12726 8 p.

研究成果: Article

light emitting diodes
output
templates
ray tracing
escape
38 引文 (Scopus)
gallium nitrides
reflectors
light emitting diodes
electric contacts
electrodes
27 引文 (Scopus)

Enhancement of the conversion efficiency of GaN-based photovoltaic devices with AlGaN/InGaN absorption layers

Yang, C. C., Sheu, J-K., Liang, X. W., Huang, M. S., Lee, M. L., Chang, K. H., Tu, S. J., Huang, F. W. & Lai, W-C., 2010 七月 12, 於 : Applied Physics Letters. 97, 2, 021113.

研究成果: Article

augmentation
electric fields
air masses
volatile organic compounds
barrier layers
5 引文 (Scopus)

Epitaxial growth of the GaN film by remote-plasma metalorganic chemical vapor deposition

Lai, W-C., Chang, C. Y., Yokoyama, M., Guo, J. D., Tsang, J. S., Chan, S. H., Bow, J. S., Wei, S. C., Hong, R. H. & Sze, S. M., 1998 十月 1, 於 : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 37, 10, p. 5465-5469 5 p.

研究成果: Article

Metallorganic chemical vapor deposition
Epitaxial growth
metalorganic chemical vapor deposition
Plasmas
Nitrogen
light emitting diodes
quantum wells
silicon
profiles
excitation