賴 韋志

Professor

  • 4449 引文
  • 33 h-指數
19982020
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研究成果 1998 2019

篩選
Article
2010
24 引文 (Scopus)

Inverted Al0.25 Ga0.75 N/GaN ultraviolet p-i-n photodiodes formed on p-GaN template layer grown by metalorganic vapor phase epitaxy

Chang, K. H., Sheu, J-K., Lee, M. L., Tu, S. J., Yang, C. C., Kuo, H. S., Yang, J. H. & Lai, W-C., 2010 七月 5, 於 : Applied Physics Letters. 97, 1, 013502.

研究成果: Article

vapor phase epitaxy
photodiodes
templates
aluminum
rejection
11 引文 (Scopus)

Very-high temperature (200°C) and high-speed operation of cascade GaN-based green light- Emitting diodes with an InGaN insertion layer

Shi, J. W., Huang, H. W., Kuo, F. M., Sheu, J. K., Lai, W. C. & Lee, M. L., 2010 七月 1, 於 : IEEE Photonics Technology Letters. 22, 14, p. 1033-1035 3 p., 5460921.

研究成果: Article

Light emitting diodes
insertion
cascades
light emitting diodes
high speed
2009
22 引文 (Scopus)

AlInN resistive ammonia gas sensors

Weng, W. Y., Chang, S. J., Hsueh, T. J., Hsu, C. L., Li, M. J. & Lai, W. C., 2009 六月 18, 於 : Sensors and Actuators, B: Chemical. 140, 1, p. 139-142 4 p.

研究成果: Article

Chemical sensors
Ammonia
ammonia
Gases
sensors
3 引文 (Scopus)

Characterization of gallium-doped zinc oxide contact on n-type gallium nitride epitaxial layers

Sheu, J-K., Chang, K. H., Lee, M. L., Huang, J. F., Kang, K. S., Wang, W. L., Lai, W-C. & Hsueh, T. H., 2009 七月 22, 於 : Journal of the Electrochemical Society. 156, 8

研究成果: Article

Zinc Oxide
Gallium nitride
Gallium
Epitaxial layers
Zinc oxide
58 引文 (Scopus)

Demonstration of GaN-based solar cells with GaN/InGaN superlattice absorption layers

Sheu, J-K., Yang, C. C., Tu, S. J., Chang, K. H., Lee, M. L., Lai, W-C. & Peng, L. C., 2009 一月 30, 於 : IEEE Electron Device Letters. 30, 3, p. 225-227 3 p.

研究成果: Article

Photovoltaic effects
Metallorganic vapor phase epitaxy
Open circuit voltage
Leakage currents
Short circuit currents
13 引文 (Scopus)
Epitaxial growth
Sapphire
Light emitting diodes
sapphire
light emitting diodes
1 引文 (Scopus)

GaN-based LEDs with GaN μ-pillars around mesa, patterned substrate, and reflector under pads

Peng, L. C., Lai, W-C., Chang, M. N., Shei, S. C. & Sheu, J-K., 2009 十一月 15, 於 : IEEE Photonics Technology Letters. 21, 22, p. 1659-1661 3 p.

研究成果: Article

mesas
reflectors
Light emitting diodes
light emitting diodes
Substrates
2 引文 (Scopus)

GaN-based LEDs with mesh ITO p-contact and nanopillars

Lai, W. C., Chen, P. H., Chang, L. C., Kuo, C. H., Sheu, J. K., Tun, C. J. & Shei, S. C., 2009 九月 15, 於 : IEEE Photonics Technology Letters. 21, 18, p. 1293-1295 3 p.

研究成果: Article

ITO (semiconductors)
Light emitting diodes
mesh
light emitting diodes
Aluminum Oxide
6 引文 (Scopus)

GaN-based LED with embedded microlens-like structure

Lai, W-C., Peng, L. C., Chang, M. N., Shei, S. C., Hsu, Y. P. & Sheu, J-K., 2009 十一月 10, 於 : Journal of the Electrochemical Society. 156, 12

研究成果: Article

Light emitting diodes
Metallorganic chemical vapor deposition
Electroluminescence
Ray tracing
Leakage currents
7 引文 (Scopus)

GaN-based power flip-chip LEDs with Cu submount

Chang, S-J., Chen, W. S., Shei, S. C., Shen, C. F., Ko, T. K., Tsai, J. M., Lai, W-C., Sheu, J-K., Lin, A. J. & Hung, S. C., 2009 三月 10, 於 : IEEE Journal on Selected Topics in Quantum Electronics. 15, 4, p. 1287-1291 5 p., 4796327.

研究成果: Article

Light emitting diodes
light emitting diodes
chips
Nitrides
nitrides

GaN MSM photodetectors with a semi-insulating alinn cap layer and sputtered ITO transparent electrodes

Weng, W. Y., Chuang, R. W., Chang, S. J., Lai, W. C., Hsueh, T. J., Shei, S. C., Zeng, X. F. & Wu, S. L., 2009 八月 24, 於 : Electrochemical and Solid-State Letters. 12, 10, p. H369-H372

研究成果: Article

Photodetectors
Tin oxides
caps
indium oxides
Indium
8 引文 (Scopus)

GaN MSM photodetectors with a semi-insulating Mg-doped AlInN cap layer

Weng, W. Y., Chang, S-J., Lai, W-C., Hsueh, T. J., Shei, S. C., Zeng, X. F., Wu, S. L. & Hung, S. C., 2009 四月 15, 於 : IEEE Photonics Technology Letters. 21, 8, p. 504-506 3 p.

研究成果: Article

MSM (semiconductors)
Photodetectors
caps
photometers
Metals
10 引文 (Scopus)

High-brightness InGaN-GaN power flip-chip LEDs

Chang, S-J., Chen, W. S., Shei, S. C., Kuo, C. T., Ko, T. K., Shen, C. F., Tsai, J. M., Lai, W-C., Sheu, J-K. & Lin, A. J., 2009 六月 15, 於 : Journal of Lightwave Technology. 27, 12, p. 1985-1989 5 p.

研究成果: Article

brightness
sapphire
light emitting diodes
chips
grinding
5 引文 (Scopus)

Improvement of the efficiency of InGaN-GaN quantum-well light-emitting diodes grown with a pulsed-trimethylindium flow process

Hsueh, T. H., Sheu, J-K., Lai, W-C., Wang, Y. T., Kuo, H. C. & Wang, S. C., 2009 四月 1, 於 : IEEE Photonics Technology Letters. 21, 7, p. 414-416 3 p.

研究成果: Article

Pulsatile flow
Semiconductor quantum wells
Light emitting diodes
light emitting diodes
quantum wells
5 引文 (Scopus)

Light output improvement of oxide-textured InGaN-based light-emitting diodes by bias-assisted photoelectrochemical oxidation with imprint technique

Yeh, C. Y., Lai, W-C., Hsueh, T. H., Yang, Y. Y., Sheu, J-K., Ringer, S. P. & Gault, B., 2009 六月 1, 於 : IEEE Photonics Technology Letters. 21, 11, p. 718-720 3 p.

研究成果: Article

Oxides
Light emitting diodes
light emitting diodes
Oxidation
oxidation
2 引文 (Scopus)

Nitride-based asymmetric two-step light-emitting diode with In 0.08Ga0.92N shallow step

Kuo, C. H., Fu, Y. K., Yeh, C. L., Tun, C. J., Chen, P. H., Lai, W-C. & Chang, S-J., 2009 三月 15, 於 : IEEE Photonics Technology Letters. 21, 6, p. 371-373 3 p.

研究成果: Article

Indium
Nitrides
nitrides
Light emitting diodes
light emitting diodes
4 引文 (Scopus)
Light emitting diodes
light emitting diodes
Electrodes
electrodes
augmentation
8 引文 (Scopus)

The structure of GaN-based transverse junction blue LED array for uniform distribution of injected current/carriers

Shi, J. W., Guol, S. H., Lin, C. S., Sheu, J-K., Chang, K. H., Lai, W-C., Kuo, C. H., Tun, C. J. & Chyi, J. I., 2009 五月 21, 於 : IEEE Journal on Selected Topics in Quantum Electronics. 15, 4, p. 1292-1297 6 p., 4957079.

研究成果: Article

Semiconductor quantum wells
Light emitting diodes
light emitting diodes
quantum wells
carrier injection
2008
3 引文 (Scopus)

Characterization of Mg-doped AlInN annealed in nitrogen and oxygen ambients

Cheng, A. T., Su, Y. K., Lai, W-C., Chen, Y. Z. & Kuo, S. Y., 2008 八月 1, 於 : Journal of Electronic Materials. 37, 8, p. 1070-1075 6 p.

研究成果: Article

Nitrogen
Heat treatment
Oxygen
nitrogen
Indium
32 引文 (Scopus)
Light emitting diodes
light emitting diodes
current distribution
chips
Electrodes
37 引文 (Scopus)
Electrostatic discharge
Light emitting diodes
endurance
light emitting diodes
electrostatics
38 引文 (Scopus)
gallium nitrides
reflectors
light emitting diodes
electric contacts
electrodes
light emitting diodes
quantum wells
silicon
profiles
excitation
2 引文 (Scopus)

Focused ion beam milled InGaN/GaN multiple quantum well nanopillars

Wu, S. E., Hsueh, T. H., Liu, C-P., Sheu, J-K., Lai, W-C. & Chang, S-J., 2008 四月 25, 於 : Japanese Journal of Applied Physics. 47, 4 PART 2, p. 3130-3133 4 p.

研究成果: Article

Focused ion beams
Semiconductor quantum wells
ion beams
quantum wells
Tuning

Four-wavelengths-mixed white light emitting diodes with dual-wavelength-pumped green and red phosphors

Lai, W. C., Sheu, J. K., Fu, Y. K., Kuo, C. H., Kuo, C. W., Tun, C. J., Pan, C. J. & Chi, G. C., 2008 八月 8, 於 : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 47, 8 PART 1, p. 6317-6319 3 p.

研究成果: Article

Phosphors
phosphors
Light emitting diodes
light emitting diodes
Wavelength
45 引文 (Scopus)
Plastic optical fibers
Semiconductor quantum wells
Light emitting diodes
Optical fiber communication
Doping (additives)
14 引文 (Scopus)
Nitrides
nitrides
Light emitting diodes
light emitting diodes
output
13 引文 (Scopus)

Linear cascade GaN-based green light-emitting diodes with invariant high-speed/power performance under high-temperature operation

Shi, J. W., Chen, P. Y., Chen, C. C., Sheu, J-K., Lai, W-C., Lee, Y. C., Lee, P. S., Yang, S. P. & Wu, M. L., 2008 十二月 1, 於 : IEEE Photonics Technology Letters. 20, 23, p. 1896-1898 3 p.

研究成果: Article

High temperature operations
Light emitting diodes
plastic fibers
cascades
light emitting diodes
28 引文 (Scopus)

Low operation voltage of nitride-based LEDs with Al-doped ZnO transparent contact layer

Kuo, C. H., Yeh, C. L., Chen, P. H., Lai, W-C., Tun, C. J., Sheu, J-K. & Chi, G. C., 2008 八月 4, 於 : Electrochemical and Solid-State Letters. 11, 9

研究成果: Article

Nitrides
nitrides
Light emitting diodes
light emitting diodes
Electric potential
4 引文 (Scopus)

Metalorganic vapor phase epitaxy growth of m-plane GaN using LiAlO 2 substrates

Cheng, A. T., Su, Y. K., Lai, W-C. & Chen, Y. Z., 2008 四月 25, 於 : Japanese Journal of Applied Physics. 47, 4 PART 2, p. 3074-3076 3 p.

研究成果: Article

Metallorganic vapor phase epitaxy
vapor phase epitaxy
Growth temperature
Buffer layers
purity
16 引文 (Scopus)

Phosphor-free GaN-based transverse junction white-light light-emitting diodes with regrown n-type regions

Shi, J. W., Chen, C. C., Wang, C. K., Lin, C. S., Sheu, J-K., Lai, W-C., Kuo, C. H., Tun, C. J., Yang, T. H., Tsao, F. C. & Chyi, J. I., 2008 三月 15, 於 : IEEE Photonics Technology Letters. 20, 6, p. 449-451 3 p.

研究成果: Article

Phosphors
phosphors
Light emitting diodes
light emitting diodes
p-n junctions
5 引文 (Scopus)

Self-assembled InN dots grown on GaN with an In0.08Ga0.92N intermediate layer by metal organic chemical vapor deposition

Fu, Y. K., Kuo, C. H., Tun, C. J., Kuo, C. W., Lai, W-C., Chi, G. C., Pan, C. J., Chen, M. C., Hong, H. F. & Lan, S. M., 2008 十月 1, 於 : Journal of Crystal Growth. 310, 20, p. 4456-4459 4 p.

研究成果: Article

Organic Chemicals
Organic chemicals
Nitrides
Indium
nitrides
1 引文 (Scopus)
Metallorganic chemical vapor deposition
Growth temperature
surface properties
Surface properties
metalorganic chemical vapor deposition
2007
14 引文 (Scopus)

AlGaN ultraviolet metal-semiconductor-metal photodetectors grown on Si substrates

Chang, S-J., Ko, T. K., Sheu, J-K., Shei, S. C., Lai, W-C., Chiou, Y. Z., Lin, Y-C., Chang, C. S., Chen, W. S. & Shen, C. F., 2007 四月 15, 於 : Sensors and Actuators, A: Physical. 135, 2, p. 502-506 5 p.

研究成果: Article

Photodetectors
caps
photometers
Metals
Semiconductor materials
4 引文 (Scopus)

DC characteristics improvement of recessed gate GaN-based HFETs grown by MOCVD

Cheng, A. T., Su, Y. K., Lai, W. C. & Huang, C. H., 2007 一月 1, 於 : Journal of Crystal Growth. 298, SPEC. ISS, p. 848-851 4 p.

研究成果: Article

Metallorganic chemical vapor deposition
High electron mobility transistors
metalorganic chemical vapor deposition
field effect transistors
direct current
6 引文 (Scopus)

Effects of leakage current and Schottky-like ohmic contact on the characterization of Al0.17Ga0.83N/GaN HBTs

Hsueh, K. P., Hsin, Y. M., Sheu, J-K., Lai, W-C., Tun, C. J., Hsu, C. H. & Lin, B. H., 2007 七月 1, 於 : Solid-State Electronics. 51, 7, p. 1073-1078 6 p.

研究成果: Article

Ohmic contacts
Heterojunction bipolar transistors
bipolar transistors
Leakage currents
heterojunctions
86 引文 (Scopus)

Enhanced efficiency of GaN-based light-emitting diodes with periodic textured Ga-doped ZnO transparent contact layer

Sheu, J. K., Lu, Y. S., Lee, M. L., Lai, W. C., Kuo, C. H. & Tun, C. J., 2007 八月 2, 於 : Applied Physics Letters. 90, 26, 263511.

研究成果: Article

light emitting diodes
indium oxides
tin oxides
composite materials
augmentation
19 引文 (Scopus)

Highly reliable high-brightness GaN-based flip chip LEDs

Chang, S-J., Chen, W. S., Shei, S. C., Ko, T. K., Shen, C. F., Hsu, Y. P., Chang, C. S., Tsai, J. M., Lai, W-C. & Lin, A. J., 2007 十一月 1, 於 : IEEE Transactions on Advanced Packaging. 30, 4, p. 752-757 6 p.

研究成果: Article

Light emitting diodes
Luminance
Tin oxides
Indium
Ohmic contacts
22 引文 (Scopus)

High responsivity of GaN p-i-n photodiode by using low-temperature interlayer

Lin, J. C., Su, Y. K., Chang, S. J., Lan, W. H., Huang, K. C., Chen, W. R., Huang, C. Y., Lai, W. C., Lin, W. J. & Cheng, Y. C., 2007 十一月 1, 於 : Applied Physics Letters. 91, 17, 173502.

研究成果: Article

photodiodes
interlayers
ionization coefficients
gallium nitrides
dark current
4 引文 (Scopus)

Improving the luminescence of InGaN-GaN blue LEDs through selective ring-region activation of the Mg-doped GaN layer

Lin, R. M., Li, J. C., Chou, Y. L., Chen, K. H., Lin, Y. H., Lu, Y. C., Wu, M. C., Hung, H. & Lai, W. C., 2007 六月 15, 於 : IEEE Photonics Technology Letters. 19, 12, p. 928-930 3 p.

研究成果: Article

Titanium
Light emitting diodes
Luminescence
light emitting diodes
Chemical activation

InGaN/GaN MQW structures prepared with various In and Ga flow rates

Lai, W-C., Lam, K. T., Liu, C. H. & Chang, S-J., 2007 一月 1, 於 : International Journal of Electronics. 94, 1, p. 1-7 7 p.

研究成果: Article

Semiconductor quantum wells
Flow rate
Metallorganic vapor phase epitaxy
Photoluminescence
Wavelength
19 引文 (Scopus)

Linear cascade arrays of GaN-based green light-emitting diodes for high-speed and high-power performance

Shi, J. W., Sheu, J. K., Wang, C. K., Chen, C. C., Hsieh, C. H., Chyi, J. I. & Lai, W. C., 2007 九月 15, 於 : IEEE Photonics Technology Letters. 19, 18, p. 1368-1370 3 p.

研究成果: Article

Light emitting diodes
cascades
light emitting diodes
high speed
Bias currents
4 引文 (Scopus)

MOVPE growth of InGaN/GaN multiple quantum wells for the blue laser diode applications

Cheng, A. T., Su, Y. K. & Lai, W. C., 2007 一月 1, 於 : Journal of Crystal Growth. 298, SPEC. ISS, p. 508-510 3 p.

研究成果: Article

Metallorganic vapor phase epitaxy
Semiconductor quantum wells
Semiconductor lasers
semiconductor lasers
quantum wells
9 引文 (Scopus)

Nitride-based dual-stage MQW LEDs

Chang, S. J., Wei, S. C., Su, Y. K. & Lai, W. C., 2007 八月 31, 於 : Journal of the Electrochemical Society. 154, 10, p. H871-H874

研究成果: Article

Nitrides
nitrides
Light emitting diodes
light emitting diodes
Electrostatic discharge
1 引文 (Scopus)

Nitride-based high power flip-chip near-UV LEDs with reflective submount

Shen, C. F., Chang, S. J., Ko, T. K., Shei, S. C., Lai, W. C., Chang, C. S., Chen, W. S., Huang, S. P., Ku, Y. W. & Horng, R. H., 2007 九月 11, 於 : IET Optoelectronics. 1, 1, p. 27-30 4 p.

研究成果: Article

Nitrides
ultraviolet radiation
nitrides
Light emitting diodes
light emitting diodes
15 引文 (Scopus)

Temperature-dependent study of n-ZnO/p-GaN diodes

Hsueh, K. P., Huang, S. C., Li, C. T., Hsin, Y. M., Sheu, J. K., Lai, W. C. & Tun, C. J., 2007 四月 8, 於 : Applied Physics Letters. 90, 13, 132111.

研究成果: Article

diodes
junction diodes
temperature dependence
annealing
temperature
2006
33 引文 (Scopus)
Electroluminescence
Semiconductor quantum wells
Light emitting diodes
light emitting diodes
quantum wells
7 引文 (Scopus)

Flip-chip p(GaN)-i(GaN)-n(AlGaN) narrowband UV-A photosensors

Ko, T. K., Shei, S. C., Chang, S-J., Su, Y. K., Chiou, Y. Z., Lin, Y-C., Chang, C. S., Chen, W. S., Wang, C. K., Sheu, J-K. & Lai, W-C., 2006 八月 1, 於 : IEEE Sensors Journal. 6, 4, p. 964-968 5 p., 1661579.

研究成果: Article

photosensors
narrowband
chips
Wavelength
Dark currents
26 引文 (Scopus)

GaN-based p-i-n sensors with ITO contacts

Chang, S-J., Ko, T. K., Su, Y. K., Chiou, Y. Z., Chang, C. S., Shei, S. C., Sheu, J-K., Lai, W-C., Lin, Y-C., Chen, W. S. & Shen, C. F., 2006 四月 1, 於 : IEEE Sensors Journal. 6, 2, p. 406-409 4 p.

研究成果: Article

ITO (semiconductors)
sensors
Sensors
Dark currents
dark current
65 引文 (Scopus)

High efficiency and improved ESD characteristics of GaN-based LEDs with naturally textured surface grown by MOCVD

Tsai, C-M., Sheu, J-K., Wang, P. T., Lai, W-C., Shei, S. C., Chang, S-J., Kuo, C. H., Kuo, C. W. & Su, Y. K., 2006 六月 1, 於 : IEEE Photonics Technology Letters. 18, 11, p. 1213-1215 3 p.

研究成果: Article

Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
Light emitting diodes
light emitting diodes
Growth temperature