賴 韋志

Professor

  • 4449 引文
  • 33 h-指數
19982020
如果您對這些純文本內容做了任何改變,很快就會看到。

研究成果 1998 2019

篩選
Article
2006
46 引文 (Scopus)
light emitting diodes
interruption
metalorganic chemical vapor deposition
electric potential
3 引文 (Scopus)

Nitride-based flip-chip p-i-n photodiodes

Ko, T. K., Chang, S-J., Su, Y. K., Chiou, Y. Z., Chang, C. S., Shei, S. C., Sheu, J-K., Lai, W-C., Lin, Y-C., Chen, W. S. & Shen, C. F., 2006 八月 1, 於 : IEEE Transactions on Advanced Packaging. 29, 3, p. 483-487 5 p.

研究成果: Article

Photodiodes
Nitrides
Dark currents
Quantum efficiency
Wavelength
5 引文 (Scopus)

Nitride-based photodiode at 510-nm wavelength for plastic optical fiber communication

Shi, J. W., Huang, H. Y., Sheu, J-K., Hsieh, S. H., Wu, Y. S., Lu, J-Y., Huang, F. H. & Lai, W-C., 2006 十二月 1, 於 : IEEE Photonics Technology Letters. 18, 1, p. 283-285 3 p.

研究成果: Article

Optical fiber communication
Plastic optical fibers
plastic fibers
Photodiodes
Nitrides
20 引文 (Scopus)

Phosphor-free GaN-based transverse junction light emitting diodes for the generation of white light

Shi, J. W., Huang, H. Y., Wang, C. K., Sheu, J-K., Lai, W-C., Wu, Y. S., Chen, C. H., Chu, J. T., Kuo, H. C., Lin, W. P., Yang, T. H. & Chyi, J. I., 2006 十二月 15, 於 : IEEE Photonics Technology Letters. 18, 24, p. 2593-2595 3 p.

研究成果: Article

junction diodes
Phosphors
phosphors
Light emitting diodes
light emitting diodes
17 引文 (Scopus)

Rapid thermal annealed InGaN/GaN Flip-Chip LEDs

Chen, W. S., Shei, S. C., Chang, S-J., Su, Y. K., Lai, W-C., Kuo, C. H., Lin, Y-C., Chang, C. S., Ko, T. K., Hsu, Y. P. & Shen, C. F., 2006 一月 1, 於 : IEEE Transactions on Electron Devices. 53, 1, p. 32-36 5 p.

研究成果: Article

Light emitting diodes
Ohmic contacts
Contact resistance
Nitrides
Wavelength
34 引文 (Scopus)
Optical fiber communication
Plastic optical fibers
plastic fibers
Semiconductor quantum wells
Light emitting diodes
2005
4 引文 (Scopus)
gallium nitrides
aluminum nitrides
photodiodes
dark current
rejection
25 引文 (Scopus)

Comparison of low-temperature GaN, SiO 2, and SiN x as gate insulators on AlGaNGaN heterostructure field-effect transistors

Kao, C. J., Chen, M. C., Tun, C. J., Chi, G. C., Sheu, J. K., Lai, W. C., Lee, M. L., Ren, F. & Pearton, S. J., 2005 九月 15, 於 : Journal of Applied Physics. 98, 6, 064506.

研究成果: Article

field effect transistors
insulators
passivity
nitrides
surface layers
48 引文 (Scopus)
Schottky diodes
caps
leakage
vapor phase epitaxy
retarding
3 引文 (Scopus)
Vapors
Annealing
Temperature
Energy gap
Impurities
54 引文 (Scopus)

Enhanced output power in GaN-based LEDs with naturally textured surface grown by MOCVD

Tsai, C. M., Sheu, J. K., Lai, W. C., Hsu, Y. P., Wang, P. T., Kuo, C. T., Kuo, C. W., Chang, S. J. & Su, Y. K., 2005 七月 1, 於 : IEEE Electron Device Letters. 26, 7, p. 464-466 3 p.

研究成果: Article

Metallorganic chemical vapor deposition
Light emitting diodes
Magnesium
Surface treatment
Electric potential
28 引文 (Scopus)

InGaN-GaN MQW LEDs with Si treatment

Hsu, Y. P., Chang, S. J., Su, Y. K., Chen, S. C., Tsai, J. M., Lai, W. C., Kuo, C. H. & Chang, C. S., 2005 八月 1, 於 : IEEE Photonics Technology Letters. 17, 8, p. 1620-1622 3 p.

研究成果: Article

Light emitting diodes
light emitting diodes
Organic Chemicals
Organic chemicals
Surface morphology
30 引文 (Scopus)

Nitride-based light-emitting diodes with p-AIInGaN surface layers

Kuo, C. H., Lin, C. C., Chang, S. J., Hsu, Y. P., Tsai, J. M., Lai, W. C. & Wang, P. T., 2005 十月 1, 於 : IEEE Transactions on Electron Devices. 52, 10, p. 2346-2349 4 p.

研究成果: Article

Nitrides
Light emitting diodes
Organic Chemicals
Organic chemicals
Lattice constants
Schottky diodes
caps
leakage
thermal stability
annealing
2004
8 引文 (Scopus)
caps
heterojunctions
field effect transistors
electrical resistivity
plasma etching
27 引文 (Scopus)

InGaN/GaN blue light-emitting diodes with self-assembled quantum dots

Su, Y. K., Chang, S-J., Ji, L. W., Chang, C. S., Wu, L. W., Lai, W-C., Fang, T. H. & Lam, K. T., 2004 三月 1, 於 : Semiconductor Science and Technology. 19, 3, p. 389-392 4 p.

研究成果: Article

Electroluminescence
blue shift
electroluminescence
Semiconductor quantum dots
Light emitting diodes
37 引文 (Scopus)

InGaN/GaN multi-quantum dot light-emitting diodes

Ji, L. W., Su, Y. K., Chang, S-J., Chang, C. S., Wu, L. W., Lai, W-C., Du, X. L. & Chen, H., 2004 三月 1, 於 : Journal of Crystal Growth. 263, 1-4, p. 114-118 5 p.

研究成果: Article

Semiconductor quantum dots
Light emitting diodes
light emitting diodes
quantum dots
Semiconductor quantum wells
102 引文 (Scopus)

Nitride-based LEDs with 800°C grown p-AlInGaN-GaN double-cap layers

Chang, S. J., Wu, L. W., Su, Y. K., Hsu, Y. P., Lai, W. C., Tsai, J. M., Sheu, J. K. & Lee, C. T., 2004 六月 1, 於 : IEEE Photonics Technology Letters. 16, 6, p. 1447-1449 3 p.

研究成果: Article

caps
Nitrides
nitrides
Light emitting diodes
light emitting diodes
69 引文 (Scopus)

Nitride-based LEDs with an SPS tunneling contact layer and an ITO transparent contact

Chang, S-J., Chang, C. S., Su, Y. K., Chuang, W-K., Lai, W-C., Kuo, C. H., Hsu, Y. P., Lin, Y-C., Shei, S. C., Lo, H. M., Ke, J. C. & Sheu, J-K., 2004 四月 1, 於 : IEEE Photonics Technology Letters. 16, 4, p. 1002-1004 3 p.

研究成果: Article

ITO (semiconductors)
Nitrides
nitrides
Light emitting diodes
light emitting diodes
35 引文 (Scopus)
Nitrides
nitrides
Light emitting diodes
light emitting diodes
Modulation
62 引文 (Scopus)

Nitride-Based LEDs With Textured Side Walls

Chang, C. S., Chang, S-J., Su, Y. K., Lee, C-T., Lin, Y-C., Lai, W-C., Shei, S. C., Ke, J. C. & Lo, H. M., 2004 三月 1, 於 : IEEE Photonics Technology Letters. 16, 3, p. 750-752 3 p.

研究成果: Article

Nitrides
nitrides
Light emitting diodes
light emitting diodes
Epitaxial layers
56 引文 (Scopus)

Nitride-based near-ultraviolet LEDs with an ITO transparent contact

Kuo, C. H., Chang, S. J., Su, Y. K., Chuang, R. W., Chang, C. S., Wu, L. W., Lai, W. C., Chen, J. F., Sheu, J. K., Lo, H. M. & Tsai, J. M., 2004 一月 15, 於 : Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 106, 1, p. 69-72 4 p.

研究成果: Article

Tin oxides
Nitrides
ultraviolet radiation
indium oxides
Indium
34 引文 (Scopus)
Dark currents
Photodetectors
Leakage currents
Wavelength
Temperature
2003
30 引文 (Scopus)

A novel method to realize InGaN self-assembled quantum dots by metalorganic chemical vapor deposition

Ji, L. W., Su, Y. K., Chang, S. J., Wu, L. W., Fang, T. H., Xue, Q. K., Lai, W. C. & Chiou, Y. Z., 2003 九月 1, 於 : Materials Letters. 57, 26-27, p. 4218-4221 4 p.

研究成果: Article

Metallorganic chemical vapor deposition
Semiconductor quantum dots
metalorganic chemical vapor deposition
quantum dots
optoelectronic devices
8 引文 (Scopus)

Be diffusion in GaN

Chang, S-J., Lai, W-C., Chen, J-F., Chen, S. C., Huang, B. R., Liu, C. H. & Liaw, U. H., 2003 十一月 1, 於 : Materials Characterization. 49, 4, p. 337-341 5 p.

研究成果: Article

Beryllium
beryllium
Photoluminescence
photoluminescence
Temperature
36 引文 (Scopus)

Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer

Lee, M. L., Sheu, J. K., Lai, W. C., Su, Y. K., Chang, S. J., Kao, C. J., Tun, C. J., Chen, M. G., Chang, W. H., Chi, G. C. & Tsai, J. M., 2003 八月 1, 於 : Journal of Applied Physics. 94, 3, p. 1753-1757 5 p.

研究成果: Article

caps
photometers
time constant
photodiodes
nitrides
44 引文 (Scopus)

GaN Schottky barrier photodetectors with a low-temperature GaN cap layer

Lee, M. L., Sheu, J. K., Lai, W. C., Chang, S. J., Su, Y. K., Chen, M. G., Kao, C. J., Chi, G. C. & Tsai, J. M., 2003 四月 28, 於 : Applied Physics Letters. 82, 17, p. 2913-2915 3 p.

研究成果: Article

gallium nitrides
caps
photometers
dark current
photodiodes
28 引文 (Scopus)

High Brightness InGaN Green LEDs with an ITO on n++ -SPS Upper Contact

Chang, C. S., Chang, S-J., Su, Y. K., Kuo, C. H., Lai, W-C., Lin, Y-C., Hsu, Y. P., Shei, S. C., Tsai, J. M., Lo, H. M., Ke, J. C. & Sheu, J-K., 2003 十一月 1, 於 : IEEE Transactions on Electron Devices. 50, 11, p. 2208-2212 5 p.

研究成果: Article

Tin oxides
Indium
Light emitting diodes
Luminance
Contact resistance
60 引文 (Scopus)

In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer

Wu, L. W., Chang, S. J., Su, Y. K., Chuang, R. W., Hsu, Y. P., Kuo, C. H., Lai, W. C., Wen, T. C., Tsai, J. M. & Sheu, J. K., 2003 十一月 1, 於 : Solid-State Electronics. 47, 11, p. 2027-2030 4 p.

研究成果: Article

caps
Light emitting diodes
light emitting diodes
Hole concentration
Epitaxial layers

InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer

Wu, L. W., Chang, S-J., Su, Y. K., Tsai, T. Y., Wen, T. C., Kuo, C. H., Lai, W-C., Sheu, J-K., Tsai, J. M., Chen, S. C. & Huang, B. R., 2003 一月 1, 於 : Journal of Electronic Materials. 32, 5, p. 411-414 4 p.

研究成果: Article

Light emitting diodes
light emitting diodes
Contact resistance
contact resistance
Electric potential
8 引文 (Scopus)

InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping

Wen, T. C., Chang, S-J., Su, Y. K., Wu, L. W., Kuo, C. H., Lai, W-C., Sheu, J-K. & Tsai, T. Y., 2003 一月 1, 於 : Journal of Electronic Materials. 32, 5, p. 419-422 4 p.

研究成果: Article

Semiconductor quantum wells
Light emitting diodes
light emitting diodes
quantum wells
barrier layers
22 引文 (Scopus)

Nitride-based blue LEDs with GaN/SiN double buffer layers

Kuo, C. H., Chang, S. J., Su, Y. K., Wang, C. K., Wu, L. W., Sheu, J. K., Wen, T. C., Lai, W. C., Tsai, J. M. & Lin, C. C., 2003 十一月 1, 於 : Solid-State Electronics. 47, 11, p. 2019-2022 4 p.

研究成果: Article

Epitaxial layers
Buffer layers
Nitrides
nitrides
Light emitting diodes
24 引文 (Scopus)

Nitride-based green light-emitting diodes with high temperature GaN barrier layers

Wu, L. W., Chang, S-J., Su, Y. K., Chuang, W-K., Wen, T. C., Kuo, C. H., Lai, W-C., Chang, C. S., Tsai, J. M. & Sheu, J-K., 2003 八月 1, 於 : IEEE Transactions on Electron Devices. 50, 8, p. 1766-1770 5 p.

研究成果: Article

barrier layers
Nitrides
nitrides
Light emitting diodes
light emitting diodes
2 引文 (Scopus)

Nitride-based near-ultraviolet multiple-quantum well light-emitting diodes with AlGaN barrier layers

Kuo, C. H., Chang, S-J., Su, Y. K., Wu, L. W., Sheu, J-K., Wen, T. C., Lai, W-C., Tsai, J. M. & Chen, S. C., 2003 一月 1, 於 : Journal of Electronic Materials. 32, 5, p. 415-418 4 p.

研究成果: Article

barrier layers
Nitrides
Semiconductor quantum wells
nitrides
Light emitting diodes
10 引文 (Scopus)

Nitride-based ultraviolet metal-semiconductor-metal photodetectors with a low-temperature GaN layer

Sheu, J-K., Kao, C. J., Lee, M. L., Lai, W-C., Yeh, L. S., Chi, G. C., Chang, S-J., Su, Y. K. & Tsai, J. M., 2003 一月 1, 於 : Journal of Electronic Materials. 32, 5, p. 400-402 3 p.

研究成果: Article

Photodetectors
Nitrides
nitrides
photometers
Metals
28 引文 (Scopus)

Si and Zn co-doped InGaN-GaN white light-emitting diodes

Chang, S. J., Wu, L. W., Su, Y. K., Kuo, C. H., Lai, W. C., Hsu, Y. P., Sheu, J. K., Chen, J. F. & Tsai, J. M., 2003 二月 1, 於 : IEEE Transactions on Electron Devices. 50, 2, p. 519-521 3 p.

研究成果: Article

Light emitting diodes
light emitting diodes
Semiconductor quantum wells
quantum wells
Color
579 引文 (Scopus)

White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors

Sheu, J-K., Chang, S-J., Kuo, C. H., Su, Y. K., Wu, L. W., Lin, Y-C., Lai, W-C., Tsai, J. M., Chi, G. C. & Wu, R. K., 2003 一月 1, 於 : IEEE Photonics Technology Letters. 15, 1, p. 18-20 3 p.

研究成果: Article

Light emission
Phosphors
phosphors
Light emitting diodes
light emission
2002
218 引文 (Scopus)

400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes

Chang, S. J., Kuo, C. H., Su, Y. K., Wu, L. W., Sheu, J. K., Wen, T. C., Lai, W. C., Chen, J. F. & Tsai, J. M., 2002 七月 1, 於 : IEEE Journal on Selected Topics in Quantum Electronics. 8, 4, p. 744-748 5 p.

研究成果: Article

Light emitting diodes
light emitting diodes
barrier layers
Vapor phase epitaxy
output
94 引文 (Scopus)

GaN metal-semiconductor-metal ultraviolet sensors with various contact electrodes

Su, Y. K., Chang, S-J., Chen, C. H., Chen, J-F., Chi, G. C., Sheu, J-K., Lai, W-C. & Tsai, J. M., 2002 十二月 1, 於 : IEEE Sensors Journal. 2, 4, p. 366-370 5 p.

研究成果: Article

MSM (semiconductors)
Tin oxides
indium oxides
Indium
tin oxides
94 引文 (Scopus)

Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes

Wu, L. W., Chang, S. J., Wen, T. C., Su, Y. K., Chen, J. F., Lai, W. C., Kuo, C. H., Chen, C. H. & Sheu, J. K., 2002 五月 1, 於 : IEEE Journal of Quantum Electronics. 38, 5, p. 446-450 5 p.

研究成果: Article

Semiconductor quantum wells
Light emitting diodes
light emitting diodes
barrier layers
Doping (additives)
54 引文 (Scopus)

InGaN/GaN tunnel-injection blue light-emitting diodes

Wen, T. C., Chang, S. J., Wu, L. W., Su, Y. K., Lai, W. C., Kuo, C. H., Chen, C. H., Sheu, J. K. & Chen, J. F., 2002 六月 1, 於 : IEEE Transactions on Electron Devices. 49, 6, p. 1093-1095 3 p.

研究成果: Article

Light emitting diodes
Tunnels
Electrons
Nitrides
Electric potential
247 引文 (Scopus)

InGaN-GaN multiquantum-well blue and green light-emitting diodes

Chang, S-J., Lai, W-C., Su, Y. K., Chen, J-F., Liu, C. H. & Liaw, U. H., 2002 三月 1, 於 : IEEE Journal on Selected Topics in Quantum Electronics. 8, 2, p. 278-283 6 p.

研究成果: Article

Light emitting diodes
light emitting diodes
Electroluminescence
electroluminescence
Photoluminescence
2001
108 引文 (Scopus)

InGaN-AlInGaN multiquantum-well LEDs

Lai, W-C., Chang, S-J., Yokoyam, M., Sheu, J-K. & Chen, J-F., 2001 六月 1, 於 : IEEE Photonics Technology Letters. 13, 6, p. 559-561 3 p.

研究成果: Article

Light emitting diodes
light emitting diodes
Electroluminescence
electroluminescence
Photoluminescence
129 引文 (Scopus)

Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In0.3Ga0.7N/GaN short-period superlattice tunnelling contact layer

Sheu, J. K., Tsai, J. M., Shei, S. C., Lai, W. C., Wen, T. C., Kou, C. H., Su, Y. K., Chang, S. J. & Chi, G. C., 2001 十月 1, 於 : IEEE Electron Device Letters. 22, 10, p. 460-462 3 p.

研究成果: Article

Light emitting diodes
Ohmic contacts
Electric potential
Metallorganic vapor phase epitaxy
Tunnel junctions
2000
18 引文 (Scopus)

Optical and electrical characteristics of CO2-laser-treated Mg-doped GaN film

Lai, W. C., Yokoyama, M., Chang, S. J., Guo, J. D., Sheu, C. H., Chen, T. Y., Tsai, W. C., Tsang, J. S., Chan, S. H. & Sze, S. M., 2000 十一月 15, 於 : Japanese journal of applied physics. 39, 11 B, p. L1138-L1140

研究成果: Article

laser annealing
Lasers
Annealing
lasers
Hole concentration
1999
4 引文 (Scopus)

Electrical properties of multiple high-dose Si implantation in p-GaN

Lai, W-C., Yokoyama, M., Tsai, C. C., Chang, C. S., Guo, J. D., Tsang, J. S., Chan, S. H. & Chang, C. Y., 1999 一月 1, 於 : Japanese Journal of Applied Physics, Part 2: Letters. 38, 7 B

研究成果: Article

Ion implantation
implantation
Electric properties
electrical properties
Annealing
3 引文 (Scopus)

Electrical properties of the Si implantation in Mg doped p-GaN

Lai, W-C., Yokoyama, M., Tsai, C. C., Chang, C. S., Guo, J. D., Tsang, J. S. & Chan, S. H., 1999 一月 1, 於 : Physica Status Solidi (B) Basic Research. 216, 1, p. 561-565 5 p.

研究成果: Article

implantation
Electric properties
electrical properties
Annealing
Activation energy
1998
5 引文 (Scopus)

Epitaxial growth of the GaN film by remote-plasma metalorganic chemical vapor deposition

Lai, W-C., Chang, C. Y., Yokoyama, M., Guo, J. D., Tsang, J. S., Chan, S. H., Bow, J. S., Wei, S. C., Hong, R. H. & Sze, S. M., 1998 十月 1, 於 : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 37, 10, p. 5465-5469 5 p.

研究成果: Article

Metallorganic chemical vapor deposition
Epitaxial growth
metalorganic chemical vapor deposition
Plasmas
Nitrogen