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研究成果 1981 2020

8 引文 (Scopus)

6-T SRAM cell design with gate-all-around silicon nanowire MOSFETs

Liao, Y. B., Chiang, M. H., Damrongplasit, N., Liu, T. J. K. & Hsu, W. C., 2013 八月 12, 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013. 6545631. (2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013).

研究成果: Conference contribution

Static random access storage
Nanowires
Silicon
Transistors
Tuning
2 引文 (Scopus)

6-T SRAM performance assessment with stacked silicon nanowire MOSFETs

Huang, Y. C., Chiang, M-H., Hsu, W-C. & Cheng, S. Y., 2015 四月 13, Proceedings of the 16th International Symposium on Quality Electronic Design, ISQED 2015. IEEE Computer Society, p. 610-614 5 p. 7085497. (Proceedings - International Symposium on Quality Electronic Design, ISQED; 卷 2015-April).

研究成果: Conference contribution

Static random access storage
Nanowires
Transistors
Silicon
2 引文 (Scopus)

A 26-38 GHz millimeter-wave band APDP sub-harmonic mixer

Yu, S. J., Huang, H. M., Lee, C. S., Wu, C. L. & Hsu, W-C., 2008 八月 1, 於 : Microwave and Optical Technology Letters. 50, 8, p. 2135-2138 4 p.

研究成果: Article

Millimeter waves
millimeter waves
radio frequencies
Diodes
diodes
4 引文 (Scopus)

A dual-phase charge pump regulator with nano-ampere switched-capacitor CMOS voltage reference for achieving low output ripples

Luo, Y. K., Chen, K. H. & Hsu, W. C., 2008 十二月 26, Proceedings of the 15th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2008. p. 446-449 4 p. 4674886. (Proceedings of the 15th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2008).

研究成果: Conference contribution

Capacitors
Pumps
Electric potential
Electric power utilization
Switches
4 引文 (Scopus)

A flat gain/power responses 6-18 GHz power amplifier MMIC with high pae by using transformer networks

Yu, S. J., Hsu, W. C., Lee, C. S., Chang, C. S., Wu, C. L. & Chang, C. H., 2008 一月 1, 於 : Microwave and Optical Technology Letters. 50, 1, p. 205-208 4 p.

研究成果: Article

power gain
Monolithic microwave integrated circuits
power amplifiers
Power amplifiers
transformers
1 引文 (Scopus)

A four-terminal gaas multiple-function transistor with a buried silicon-doping quantum well

Wu, C. L., Hsu, W. C., Tsai, M. S. & Shieh, H. M., 1994 十月, 於 : Japanese Journal of Applied Physics. 33, 10A, p. 1393-1395 3 p.

研究成果: Article

MESFET devices
Semiconductor quantum wells
Transistors
transistors
field effect transistors
3 引文 (Scopus)

A high-density SRAM design technique using silicon nanowire FETs

Liao, Y. B., Chiang, M. H., Kim, K. & Hsu, W. C., 2011 十二月 1, 2011 International Semiconductor Device Research Symposium, ISDRS 2011. 6135407. (2011 International Semiconductor Device Research Symposium, ISDRS 2011).

研究成果: Conference contribution

Static random access storage
Field effect transistors
Nanowires
Wire
Silicon
15 引文 (Scopus)

A High-Performance S-Doped GaAs/InxGa1_xAs Pseudomorphic High Electron Mobility Transistor Utilizing a Graded InxGaj_xAs Channel

Shieh, H. M., Hsu, W. C., Hsu, R. T., Wu, C. L. & Wu, T. S., 1993 十二月, 於 : IEEE Electron Device Letters. 14, 12, p. 581-583 3 p.

研究成果: Article

Transconductance
High electron mobility transistors
Low pressure chemical vapor deposition
Metallorganic chemical vapor deposition
Leakage currents
26 引文 (Scopus)

A High Performance Symmetric Double 6-Doped GaAs/InGaAs/GaAs Pseudomorphic HFET’s Grown by MOCVD

Hsu, W. C., Shieh, H. M., Wu, C. L. & Wu, T. S., 1994 三月, 於 : IEEE Transactions on Electron Devices. 41, 3, p. 456-457 2 p.

研究成果: Article

Metallorganic chemical vapor deposition
Transconductance
Current density
gallium arsenide
3 引文 (Scopus)

A Ku-band three-stage mmic low-noise amplifier with superiorly low thermal-sensitivity coefficients

Yu, S. J., Hsu, W. C., Lee, C. S., Chang, C. S., Wu, C. L. & Chang, C. H., 2007 七月 1, 於 : Microwave and Optical Technology Letters. 49, 7, p. 1637-1641 5 p.

研究成果: Article

Low noise amplifiers
Noise figure
low noise
amplifiers
sensitivity
Semiconductors
High electron mobility transistors
Passivation
Oxides
Metals
2 引文 (Scopus)
MOSFET devices
High electron mobility transistors
high electron mobility transistors
Ozone
ozone
開啟存取
Semiconductors
High electron mobility transistors
Electric breakdown
Oxides
Metals
5 引文 (Scopus)
Semiconductors
High electron mobility transistors
Oxides
Metals
Substrates
1 引文 (Scopus)

Al2O3-Dielectric InAlN/AlN/GaN Γ-Gate MOS-HFETs with Composite Al2O3/TiO2 passivation oxides

Lee, C. S., Yao, X. C., Huang, Y. P. & Hsu, W. C., 2018 一月 1, 於 : IEEE Journal of the Electron Devices Society. 6, p. 1142-1146 5 p., 8470934.

研究成果: Article

Semiconductors
High electron mobility transistors
Passivation
Oxides
Metals
17 引文 (Scopus)

Al2O3-passivated AlGaN/GaN HEMTs by using nonvacuum ultrasonic spray pyrolysis deposition technique

Chou, B. Y., Liu, H. Y., Hsu, W. C., Lee, C. S., Wu, Y. S., Sun, W. C., Wei, S. Y. & Yu, S. M., 2014 九月, 於 : IEEE Electron Device Letters. 35, 9, p. 903-905 3 p., 6853327.

研究成果: Article

Spray pyrolysis
High electron mobility transistors
Ultrasonics
Electric breakdown
Passivation
1 引文 (Scopus)
High electron mobility transistors
Electric breakdown
Hydrogen peroxide
Hydrogen Peroxide
Transconductance
8 引文 (Scopus)

Al2O3 passivation layer for InGaN/GaN LED deposited by ultrasonic spray pyrolysis

Liu, H. Y., Hsu, W-C., Chou, B. Y., Wang, Y. H., Sun, W. C., Wei, S. Y. & Yu, S. M., 2014 六月 15, 於 : IEEE Photonics Technology Letters. 26, 12, p. 1243-1246 4 p., 6805178.

研究成果: Article

Spray pyrolysis
Passivation
passivity
pyrolysis
Light emitting diodes
1 引文 (Scopus)

A LCD supplied by high integrated dual-side dual-output switched-capacitor regulator with only two flying capacitors

Shih, C. J., Lee, Y. H., Lin, Y. C., Fan, M. Y., Chen, K. H., Liu, S. F., Chiu, P. H., Chen, S., Shen, C. Y., Hsieh, M. T., Li, H. A., Luo, Y. K. & Hsu, W-C., 2011 十二月 1, 49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011. p. 1304-1307 4 p. (49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011; 卷 3).

研究成果: Conference contribution

Liquid crystal displays
Capacitors
Electric potential
Switches
Multiplexing

AlGaN/AlN/GaN MOS-HEMTs with Al2O3 gate dielectric formed by using ozone water oxidation technique

Lee, C. S., Liu, H. Y., Hsu, W-C., Wu, T. T., Huang, H. S., Chen, S. F., Yang, Y. C., Chiang, B. C. & Chang, H. C., 2015 八月 14, 2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015. Institute of Electrical and Electronics Engineers Inc., p. 194-196 3 p. 7203397. (Proceedings of the International Conference on Power Electronics and Drive Systems; 卷 2015-August).

研究成果: Conference contribution

Gate dielectrics
High electron mobility transistors
Ozone
Oxidation
Metals
3 引文 (Scopus)

AlGaN/GaN MOS-HEMTs with TiO 2 gate dielectric by using non-vacuum ultrasonic spray pyrolysis deposition

Liu, H. Y., Lee, C. S., Hsu, W-C., Wu, T. T., Huang, H. S., Chen, S. F., Yang, Y. C., Chiang, B. C. & Chang, H. C., 2015 八月 14, 2015 IEEE 11th International Conference on Power Electronics and Drive Systems, PEDS 2015. Institute of Electrical and Electronics Engineers Inc., p. 578-580 3 p. 7203398. (Proceedings of the International Conference on Power Electronics and Drive Systems; 卷 2015-August).

研究成果: Conference contribution

Spray pyrolysis
Gate dielectrics
High electron mobility transistors
Ultrasonics
Gates (transistor)
1 引文 (Scopus)
lightning
graphene
eigenvectors
Green's functions
transport properties
4 引文 (Scopus)

A metamorphic heterostructure field-effect transistor with a double delta-doped channel

Huang, D. H., Hsu, W-C., Lin, Y. S., Yeh, J. H. & Huang, J. C., 2007 七月 1, 於 : Semiconductor Science and Technology. 22, 7, p. 784-787 4 p., 018.

研究成果: Article

Drain current
Cutoff frequency
Transconductance
High electron mobility transistors
Wave functions
3 引文 (Scopus)

Amorphous TiO2-based thin-film phototransistor

Liu, H. Y., Huang, R. C., Li, Y. Y., Lee, C. S. & Hsu, W-C., 2017 六月 1, 於 : IEEE Electron Device Letters. 38, 6, p. 756-759 4 p., 7898432.

研究成果: Article

Phototransistors
Thin films
Gate dielectrics
Amorphous films
Field effect transistors
4 引文 (Scopus)

An alternative approach for improving performance of organic photovoltaics by light-enhanced annealing

Yao, E. P., Ho, C. S., Yu, C., Huang, E. L., Lai, Y. N. & Hsu, W. C., 2014 七月 9, 於 : International Journal of Photoenergy. 2014, 120693.

研究成果: Article

heterojunctions
Annealing
annealing
laser annealing
Heterojunctions

ANALYSIS OF EXPONENTIAL TRANSIENTS IN DEEP LEVEL PERIODIC TRANSIENT SPECTROSCOPY.

Chang, C. Y., Hsu, W-C., Chen, T. Y., Liu, W-C., Fang, Y. K. & Chen, R. M., 1982 十二月 1, 於 : Electrochemical Society Extended Abstracts. 82-2, p. 369-370 2 p.

研究成果: Conference article

Spectroscopy
4 引文 (Scopus)

Analytic modeling for current-voltage characteristics and drain-induced barrier-lowering (DIBL) phenomenon of the InGaP/InGaAs/GaAs PDCFET

Lee, C. S., Yang, W. L., Chen, H. H., Hsu, W-C., Chen, Y. J. & Huang, J. C., 2004 十二月 1, 於 : Journal of the Korean Physical Society. 45, SUPPL.

研究成果: Article

field effect transistors
electric potential
Newton methods
Poisson equation
nonlinear equations
6 引文 (Scopus)
Field effect transistors
field effect transistors
Newton-Raphson method
Nonlinear equations
Electric potential
2 引文 (Scopus)
Poisson equation
Current voltage characteristics
Field effect transistors
field effect transistors
Metals

A new In0.53Al0.22Ga0.25As/InP heterojunction bipolar transistor grown by LP-MOCVD

Wu, Y. H., Su, J. S., Hsu, W-C., Liu, W-C. & Lin, W., 1994 一月 1, European Solid-State Device Research Conference. Ashburn, P. & Hill, C. (編輯). IEEE Computer Society, p. 455-458 4 p. 5435758. (European Solid-State Device Research Conference).

研究成果: Conference contribution

Low pressure chemical vapor deposition
Metallorganic chemical vapor deposition
Heterojunction bipolar transistors
Valence bands
Conduction bands
1 引文 (Scopus)
bipolar transistors
heterojunctions
discontinuity
spike potentials
metalorganic chemical vapor deposition
1 引文 (Scopus)

A new δ-doped InGaAs/GaAs pseudomorphic high electron mobility transistor utilizing a strained superlattice spacer

Shieh, H. M., Hsu, W. C., Kao, M. J., Wu, C. L. & Wu, T. S., 1993 八月, 於 : Solid State Electronics. 36, 8, p. 1117-1119 3 p.

研究成果: Article

Organic chemicals
Transconductance
High electron mobility transistors
Current voltage characteristics
high electron mobility transistors
2 引文 (Scopus)

An improved In0.34Al0.66As0.85Sb0.15/InP heterostructure utilizing coupled δ-doping InP channel

Chen, Y. J., Chen, Y. W., Lin, Y. S., Yeh, C. Y., Li, Y. J. & Hsu, W-C., 2001 一月 15, 於 : Japanese Journal of Applied Physics, Part 2: Letters. 40, 1 A/B

研究成果: Article

High electron mobility transistors
Heterojunctions
field effect transistors
Doping (additives)
Electron mobility
27 引文 (Scopus)
Low pressure chemical vapor deposition
Bipolar transistors
Metallorganic chemical vapor deposition
bipolar transistors
Heterojunctions
10 引文 (Scopus)

An Improved Inverted δ-Doped GaAs/InGaAs Pseudomorphic Heterostructure Grown by MOCVD

Wu, C. L., Hsu, W-C., Shieh, H. M. & Tsai, M. S., 1994 一月 1, 於 : IEEE Electron Device Letters. 15, 9, p. 330-332 3 p.

研究成果: Article

Low pressure chemical vapor deposition
Metallorganic chemical vapor deposition
Transconductance
Secondary ion mass spectrometry
Leakage currents
1 引文 (Scopus)

An improved symmetrically-graded doped-channel heterostructure field-effect transistor

Su, K. H., Hsu, W. C., Hu, P. J., Chen, Y. J., Lee, C. S., Lin, Y. S. & Wu, C. L., 2007 六月, 於 : Journal of the Korean Physical Society. 50, 6, p. 1878-1882 5 p.

研究成果: Article

field effect transistors
threshold voltage
transconductance
electrical faults
confining
5 引文 (Scopus)

An investigation of organic photovoltaics improvement via extension of the exciton lifetime

Yao, E. P., Tsai, Y. J. & Hsu, W. C., 2015 二月, 於 : Physical Chemistry Chemical Physics. 17, 8, p. 5826-5831 6 p.

研究成果: Article

excitons
Heterojunctions
heterojunctions
life (durability)
atomic energy levels
1 引文 (Scopus)

Annealing effect on the buffer layer of high-quality crystalline GaN

Wang, T. B., Hsu, W-C., Hsu, R. T., Wu, Y. H. & Lin, Y. S., 2007 十二月 1, Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B. p. 23-24 2 p. (AIP Conference Proceedings; 卷 893).

研究成果: Conference contribution

surface roughness
buffers
annealing
coalescing
metalorganic chemical vapor deposition

Anomalous negative-differential-resistance (NDR) characteristics of n+ -GaAs/n- -GaAs/n+ -In0.2Ga0.8As/i-GaAs structure

Laih, L. W., Liu, W. C., Tsai, J. H., Hsu, W. C., Ting, Y. T. & Liu, R. C., 1996 六月, 於 : Superlattices and Microstructures. 20, 1, p. 7-13 7 p.

研究成果: Article

Field effect transistors
Electric potential
field effect transistors
gallium arsenide
electric potential
12 引文 (Scopus)

A novel dilute antimony channel In0.2Ga0.8AsSb/ GaAs HEMT

Su, K. H., Hsu, W. C., Lee, C. S., Wu, T. Y., Wu, Y. H., Chang, L., Hsiao, R. S., Chen, J. F. & Chi, W. C., 2007 二月 1, 於 : IEEE Electron Device Letters. 28, 2, p. 96-99 4 p.

研究成果: Article

Antimony
High electron mobility transistors
Electron transport properties
Atoms
Cutoff frequency
7 引文 (Scopus)

A novel InAlAs/InGaAs two-terminal real-space transfer diode

Su, J. S., Hsu, W-C., Lin, Y. S., Lin, W., Wu, C. L., Tsai, M. S. & Wu, Y. H., 1996 二月 1, 於 : IEEE Electron Device Letters. 17, 2, p. 43-45 3 p.

研究成果: Article

Low pressure chemical vapor deposition
Charge injection
Ohmic contacts
Sewers
Metallorganic chemical vapor deposition
1 引文 (Scopus)

A novel parameter extraction method for HEMT models by using generic algorithms

He, C. S., Yang, W. Y., Cheng, M. B., Su, K. H., Yu, S. J., Hsu, W. C. & Lee, C. S., 2007 十二月 1, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007. p. 241-245 5 p. 4450107. (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007).

研究成果: Conference contribution

Parameter extraction
High electron mobility transistors
Equivalent circuits
8 引文 (Scopus)

A novel transparent AZO-gated Al0.2Ga0.8As/In 0.2Ga0.8As pHEMT and photosensing characteristics thereof

Lee, C. S., Chou, B. Y. & Hsu, W. C., 2011 三月 1, 於 : IEEE Transactions on Electron Devices. 58, 3, p. 725-731 7 p., 5699355.

研究成果: Article

High electron mobility transistors
Photovoltaic effects
Opacity
Electric potential
Infrared radiation
29 引文 (Scopus)
Low pressure chemical vapor deposition
Charge injection
Metallorganic chemical vapor deposition
Buffer layers
Transistors

An RRAM with a 2D material embedded double switching layer for neuromorphic computing

Chen, P. A., Ge, R. J., Lee, J. W., Hsu, C. H., Hsu, W. C., Akinwande, D. & Chiang, M. H., 2019 一月 8, 2018 IEEE 13th Nanotechnology Materials and Devices Conference, NMDC 2018. Institute of Electrical and Electronics Engineers Inc., 8605915. (2018 IEEE 13th Nanotechnology Materials and Devices Conference, NMDC 2018).

研究成果: Conference contribution

random access memory
oxygen ions
plastic properties
Plasticity
Ions
1 引文 (Scopus)

Application Of Doping-Superlattice Collector Structure For Gaas Bipolar Transistor

Liu, W. C., Sun, C. Y., Hsu, W. C. & Guo, D. F., 1993 四月, 於 : Japanese Journal of Applied Physics. 32, 4 R, p. 1575-1582 8 p.

研究成果: Article

Bipolar transistors
bipolar transistors
accumulators
Transistors
transistors

A pragmatic design methodology using proper isolation and doping for bulk FinFETs

Liao, Y. B., Chiang, M-H., Lai, Y. S. & Hsu, W-C., 2013 五月 13, 於 : Solid-State Electronics. 85, p. 48-53 6 p.

研究成果: Article

isolation
Doping (additives)
methodology
Oxides
Substrates
6 引文 (Scopus)
Organic Chemicals
Organic chemicals
Field effect transistors
Semiconductor quantum wells
metalorganic chemical vapor deposition
8 引文 (Scopus)
Deep level transient spectroscopy
personal computers
Semiconductor devices
semiconductor devices
Personal computers
25 引文 (Scopus)

A simple gate-dielectric fabrication process for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

Liu, H. Y., Chou, B. Y., Hsu, W. C., Lee, C. S. & Ho, C. S., 2012 六月 14, 於 : IEEE Electron Device Letters. 33, 7, p. 997-999 3 p., 6213490.

研究成果: Article

Aluminum Oxide
Gate dielectrics
High electron mobility transistors
Metals
Aluminum