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研究成果 1981 2020

2009
9 引文 (Scopus)

Design optimization in write speed of multi-level cell application for phase change memory

Lin, J. T., Liao, Y. B., Chiang, M. H., Chiu, I. H., Lin, C. L., Hsu, W. C., Chiang, P. C., Sheu, S. S., Hsu, Y. Y., Liu, W. H., Su, K. L., Kao, M. J. & Tsai, M. J., 2009 十二月 1, 2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009. p. 525-528 4 p. 5394196. (2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009).

研究成果: Conference contribution

Phase change memory
Pulse code modulation
Quenching
Design optimization
Monolithic microwave integrated circuits
High electron mobility transistors
Frequency bands
Networks (circuits)
Electric potential
3 引文 (Scopus)

Improved white organic light-emitting diodes with modified dual-emission-layer designs

Lai, Y. N., Hsu, W. C., Lee, C. S., Wang, C. W., Yeh, S. W., Ho, C. S. & Lai, W. F., 2009 七月 1, 於 : Japanese journal of applied physics. 48, 7 PART 1, 072101.

研究成果: Article

Organic light emitting diodes (OLED)
light emitting diodes
Doping (additives)
Anthracene
Light emission
6 引文 (Scopus)
recesses
High electron mobility transistors
high electron mobility transistors
Passivation
passivity
14 引文 (Scopus)

Operation of multi-level phase change memory using various programming techniques

Lin, J. T., Liao, Y. B., Chiang, M-H. & Hsu, W-C., 2009 十二月 1, 2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009. p. 199-202 4 p. 5166295. (2009 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2009).

研究成果: Conference contribution

Phase change memory
Quenching
2 引文 (Scopus)

Optimal design and performance assessment of extremely-scaled Si nanowire FET on insulator

Chen, C. Y., Liao, Y. B., Chiang, M-H., Kim, K., Hsu, W-C. & Cheng, S. Y., 2009 十二月 28, 2009 IEEE International SOI Conference. 5318741. (Proceedings - IEEE International SOI Conference).

研究成果: Conference contribution

Field effect transistors
Nanowires
Wire
Optimal design
Design optimization
2008
2 引文 (Scopus)

A 26-38 GHz millimeter-wave band APDP sub-harmonic mixer

Yu, S. J., Huang, H. M., Lee, C. S., Wu, C. L. & Hsu, W-C., 2008 八月 1, 於 : Microwave and Optical Technology Letters. 50, 8, p. 2135-2138 4 p.

研究成果: Article

Millimeter waves
millimeter waves
radio frequencies
Diodes
diodes
4 引文 (Scopus)

A dual-phase charge pump regulator with nano-ampere switched-capacitor CMOS voltage reference for achieving low output ripples

Luo, Y. K., Chen, K. H. & Hsu, W. C., 2008 十二月 26, Proceedings of the 15th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2008. p. 446-449 4 p. 4674886. (Proceedings of the 15th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2008).

研究成果: Conference contribution

Capacitors
Pumps
Electric potential
Electric power utilization
Switches
4 引文 (Scopus)

A flat gain/power responses 6-18 GHz power amplifier MMIC with high pae by using transformer networks

Yu, S. J., Hsu, W. C., Lee, C. S., Chang, C. S., Wu, C. L. & Chang, C. H., 2008 一月 1, 於 : Microwave and Optical Technology Letters. 50, 1, p. 205-208 4 p.

研究成果: Article

power gain
Monolithic microwave integrated circuits
power amplifiers
Power amplifiers
transformers
3 引文 (Scopus)

Assessment of novel phase change memory programming techniques

Liao, Y. B., Lin, J. T., Chiang, M-H. & Hsu, W-C., 2008 十二月 1, 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC. 4760662. (2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC).

研究成果: Conference contribution

Phase change memory
Computer programming
Data storage equipment
5 引文 (Scopus)
high electron mobility transistors
linearity
power gain
high gain
indium
66 引文 (Scopus)

Improved hydrogen sensing characteristics of a Pt/SiO2/GaN Schottky diode

Tsai, T. H., Huang, J. R., Lin, K. W., Hsu, W-C., Chen, H-I. & Liu, W-C., 2008 一月 29, 於 : Sensors and Actuators, B: Chemical. 129, 1, p. 292-302 11 p.

研究成果: Article

MIS (semiconductors)
Schottky diodes
Hydrogen
Diodes
Metals

Improved white organic light-emitting devices with dual-emission-layer design

Hsu, W. C., Lai, Y. N., Lee, C. S., Yeh, S. W., Lai, W. F. & Lai, W. H., 2008 十二月 1, ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. p. 1017-1020 4 p. 4734725. (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT).

研究成果: Conference contribution

Organic light emitting diodes (OLED)
Color
light emitting diodes
Anthracene
Energy barriers
5 引文 (Scopus)

Investigations on highly stable thermal characteristics of a dilute In 0.2Ga0.8AsSb/GaAs doped-channel field-effect transistor

Su, K. H., Hsu, W-C., Lee, C. S., Hu, P. J., Wu, Y. H., Chang, L., Hsiao, R. S., Chen, J. F. & Chi, T. W., 2008 四月 1, 於 : Semiconductor Science and Technology. 23, 4, 045012.

研究成果: Article

Field effect transistors
field effect transistors
Cutoff frequency
Transconductance
Molecular beam epitaxy

Investigations on in0.2Ga0.8AsSb/GaAs high electron mobility transistors with gate passivations

Lee, C. S., He, C. S., Hsu, W-C., Su, K. H., Yang, P. C., Chou, B. I. & Kao, A. Y., 2008 十二月 1, ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. p. 1106-1109 4 p. 4734730. (International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT).

研究成果: Conference contribution

Gates (transistor)
High electron mobility transistors
high electron mobility transistors
Passivation
passivity
1 引文 (Scopus)
field effect transistors
electric potential
electrical faults
linearity
nitrides
Pixels
Networks (circuits)
Organic light emitting diodes (OLED)
Luminance
Aging of materials
2007
3 引文 (Scopus)

A Ku-band three-stage mmic low-noise amplifier with superiorly low thermal-sensitivity coefficients

Yu, S. J., Hsu, W. C., Lee, C. S., Chang, C. S., Wu, C. L. & Chang, C. H., 2007 七月 1, 於 : Microwave and Optical Technology Letters. 49, 7, p. 1637-1641 5 p.

研究成果: Article

Low noise amplifiers
Noise figure
low noise
amplifiers
sensitivity
4 引文 (Scopus)

A metamorphic heterostructure field-effect transistor with a double delta-doped channel

Huang, D. H., Hsu, W-C., Lin, Y. S., Yeh, J. H. & Huang, J. C., 2007 七月 1, 於 : Semiconductor Science and Technology. 22, 7, p. 784-787 4 p., 018.

研究成果: Article

Drain current
Cutoff frequency
Transconductance
High electron mobility transistors
Wave functions
1 引文 (Scopus)

An improved symmetrically-graded doped-channel heterostructure field-effect transistor

Su, K. H., Hsu, W. C., Hu, P. J., Chen, Y. J., Lee, C. S., Lin, Y. S. & Wu, C. L., 2007 六月, 於 : Journal of the Korean Physical Society. 50, 6, p. 1878-1882 5 p.

研究成果: Article

field effect transistors
threshold voltage
transconductance
electrical faults
confining
1 引文 (Scopus)

Annealing effect on the buffer layer of high-quality crystalline GaN

Wang, T. B., Hsu, W-C., Hsu, R. T., Wu, Y. H. & Lin, Y. S., 2007 十二月 1, Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B. p. 23-24 2 p. (AIP Conference Proceedings; 卷 893).

研究成果: Conference contribution

surface roughness
buffers
annealing
coalescing
metalorganic chemical vapor deposition
12 引文 (Scopus)

A novel dilute antimony channel In0.2Ga0.8AsSb/ GaAs HEMT

Su, K. H., Hsu, W. C., Lee, C. S., Wu, T. Y., Wu, Y. H., Chang, L., Hsiao, R. S., Chen, J. F. & Chi, W. C., 2007 二月 1, 於 : IEEE Electron Device Letters. 28, 2, p. 96-99 4 p.

研究成果: Article

Antimony
High electron mobility transistors
Electron transport properties
Atoms
Cutoff frequency
1 引文 (Scopus)

A novel parameter extraction method for HEMT models by using generic algorithms

He, C. S., Yang, W. Y., Cheng, M. B., Su, K. H., Yu, S. J., Hsu, W. C. & Lee, C. S., 2007 十二月 1, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007. p. 241-245 5 p. 4450107. (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007).

研究成果: Conference contribution

Parameter extraction
High electron mobility transistors
Equivalent circuits
61 引文 (Scopus)
Schottky diodes
Hydrogen
Diodes
atmospheres
air
12 引文 (Scopus)

Comparison of Al0.32 Ga0.68 NGaN heterostructure field-effect transistors with different channel thicknesses

Wang, T. B., Hsu, W. C., Su, J. L., Hsu, R. T., Wu, Y. H., Lin, Y. S. & Su, K. H., 2007 二月 19, 於 : Journal of the Electrochemical Society. 154, 3, p. H131-H133

研究成果: Article

High electron mobility transistors
field effect transistors
Low pressure chemical vapor deposition
Electron mobility
Drain current
3 引文 (Scopus)

Highly stable thermal characteristics of a novel in0.3Ga 0.7As0.99N0.01(Sb)/GaAs high-electron-mobility transistor

Su, K. H., Hsu, W-C., Lee, C. S., Hu, P. J., Hsiao, R. S., Chen, J. F. & Chi, T. W., 2007 四月 24, 於 : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 46, 4 B, p. 2344-2347 4 p.

研究成果: Article

High electron mobility transistors
transconductance
high electron mobility transistors
linearity
molecular beam epitaxy

High performance GaN-based hydrogen sensors

Hsu, W. C., Huang, J. R., Lin, K. W., Chen, H. I. & Liu, W. C., 2007 十二月 1, ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface. 2 編輯 p. 163-182 20 p. (ECS Transactions; 卷 6, 編號 2).

研究成果: Conference contribution

Hydrogen
Sensors
Diodes
High temperature operations
Low temperature operations
4 引文 (Scopus)

High-power-density and high-gain δ-doped In0.425Al 0.575As/In0.425Ga0.575As low-voltage for operation

Huang, J. C., Hsu, W. C., Lee, C. S., Huang, D. H. & Yang, Y. C., 2007 二月 19, 於 : Journal of the Electrochemical Society. 154, 3, p. H185-H190

研究成果: Article

high gain
low voltage
radiant flux density
Intermodulation distortion
Impact ionization
16 引文 (Scopus)

Improved hydrogen-sensing properties of a Pt SiO2 GaN schottky diode

Tsai, T. H., Huang, J. R., Lin, K. W., Hung, C. W., Hsu, W-C., Chen, H-I. & Liu, W-C., 2007 十月 22, 於 : Electrochemical and Solid-State Letters. 10, 12

研究成果: Article

Schottky diodes
Hydrogen
Diodes
MIS (semiconductors)
MIS devices

Investigations of δ-doped inxAl1-xAs/In yGa1-yAs MHEMTs characteristics with different channel compositions

Chian, C. J., He, C. S., Su, K. H., Yu, S. J., Chou, B. I., Kao, A. Y., Hsu, W. C. & Lee, C. S., 2007 十二月 1, IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007. p. 745-748 4 p. 4450233. (IEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007).

研究成果: Conference contribution

Indium
High electron mobility transistors
Electric potential
Chemical analysis
gallium arsenide
6 引文 (Scopus)

Low threshold current density, highly strained InGaAs laser grown by MOCVD

Chen, I. L., Hsu, W. C., Lee, T. D. & Chiou, C. H., 2007 三月 26, 於 : Thin Solid Films. 515, 10, p. 4522-4525 4 p.

研究成果: Article

Organic Chemicals
Threshold current density
Organic chemicals
threshold currents
metalorganic chemical vapor deposition
3 引文 (Scopus)

Single-mode InGaAs photonic crystal vertical-cavity surface-emitting lasers emitting at 1170 nm

Wang, T. B., Hsu, W-C., Chen, I. L., Lee, T. D., Su, K. H., Yang, H. P. D. & Chiou, C. H., 2007 四月 10, 於 : Journal of the Electrochemical Society. 154, 5

研究成果: Article

Surface emitting lasers
Laser modes
Photonic crystals
surface emitting lasers
Protons
10 引文 (Scopus)

Temperature-dependent characteristics of enhancement-/depletion-mode double δ-doped AlGaAs/InGaAs pHEMTs and their monolithic DCFL integrations

Huang, J. C., Hsu, W. C., Lee, C. S., Huang, D. H. & Huang, M. F., 2007 六月 1, 於 : Solid-State Electronics. 51, 6, p. 882-887 6 p.

研究成果: Article

aluminum gallium arsenides
depletion
augmentation
Temperature
temperature
Drain current
Transconductance
High electron mobility transistors
transconductance
field effect transistors
4 引文 (Scopus)

δ-doped InGaP/GaAs heterostructure-emitter bipolar transistor grown by metalorganic chemical vapor deposition

Lin, Y. S., Huang, D. H., Chen, Y. W., Huang, J. C. & Hsu, W. C., 2007 二月 26, 於 : Thin Solid Films. 515, 7-8, p. 3978-3981 4 p.

研究成果: Article

Bipolar transistors
Metallorganic chemical vapor deposition
bipolar transistors
metalorganic chemical vapor deposition
Heterojunctions
2006
11 引文 (Scopus)

Characteristics of δ-doped InAlAs/InGaAs/InP high electron mobility transistors with a linearly graded InxGa1-xAs channel

Huang, J. C., Hsu, W. C., Lee, C. S., Huang, D. H. & Huang, M. F., 2006 五月 1, 於 : Semiconductor Science and Technology. 21, 5, p. 619-625 7 p.

研究成果: Article

High electron mobility transistors
high electron mobility transistors
Carrier transport
output
Cutoff frequency
4 引文 (Scopus)

Comparative studies of δ -doped In0.45 Al0.55 as in0.53 Ga0.47 AsGaAs metamorphic HEMTs with Au, TiAu, NiAu, and PtAu gates

Su, K. H., Hsu, W. C., Lee, C. S., Chen, I. L., Chen, Y. J. & Wu, C. L., 2006 十月 17, 於 : Journal of the Electrochemical Society. 153, 11, p. G996-G1000 065611JES.

研究成果: Article

High electron mobility transistors
Impact ionization
7 引文 (Scopus)

Comparative study of In0.52Al0.48As/In xGa1-xAs/InP high-electron-mobility transistors with a symmetrically graded and an inversely graded channel

Huang, D. H., Hsu, W. C., Lin, Y. S., Wu, Y. H., Hsu, R. T., Huang, J. C. & Liao, Y. K., 2006 六月 1, 於 : Semiconductor Science and Technology. 21, 6, p. 781-785 5 p.

研究成果: Article

High electron mobility transistors
high electron mobility transistors
Heterojunctions
heterojunctions
discontinuity
65 引文 (Scopus)

Comparison of hydrogen sensing characteristics for Pd/GaN and Pd/Al0.3Ga0.7As Schottky diodes

Huang, J. R., Hsu, W. C., Chen, Y. J., Wang, T. B., Lin, K. W., Chen, H. I. & Liu, W. C., 2006 九月 12, 於 : Sensors and Actuators, B: Chemical. 117, 1, p. 151-158 8 p.

研究成果: Article

Schottky diodes
Hydrogen
Diodes
hydrogen
Adsorption

Effect of annealing on low-threshold-current large-wavelength InGaAs quantum well vertical-cavity laser

Chen, I. L., Hsu, W. C., Kuo, H. C., Sung, C. P., Chiou, C. H., Wang, J. M., Chang, Y. H., Yu, H. C. & Lee, T. D., 2006 二月 8, 於 : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 45, 2 A, p. 770-773 4 p.

研究成果: Article

Distributed Bragg reflectors
Laser resonators
Growth temperature
Bragg reflectors
laser cavities
14 引文 (Scopus)

Enhancing the current gain in InP/InGaAs double heterojunction bipolar transistors using emitter edge thinning

Lin, Y. S., Huang, D. H., Hsu, W-C., Su, K. H. & Wang, T. B., 2006 三月 1, 於 : Semiconductor Science and Technology. 21, 3, p. 303-305 3 p.

研究成果: Article

Heterojunction bipolar transistors
bipolar transistors
heterojunctions
emitters
accumulators
1 引文 (Scopus)

Growth of highly strained InGaAs quantum wells by metalorganic chemical vapor deposition with application to vertical-cavity surface-emitting laser

Chen, I. L., Hsu, W-C., Lee, T. D., Kuo, H. C., Ke-Hua, S. U., Chiou, C. H., Wang, J. M. & Chang, Y. H., 2006 一月 31, 於 : Japanese Journal of Applied Physics, Part 2: Letters. 45, 1-3

研究成果: Article

surface emitting lasers
metalorganic chemical vapor deposition
quantum wells
cavities
wavelengths
17 引文 (Scopus)

High power and high breakdown δ-doped In0.35Al 0.65As/In0.35Ga0.65As metamorphic HEMT

Yu, S. J., Hsu, W. C., Chen, Y. J. & Wu, C. L., 2006 二月 1, 於 : Solid-State Electronics. 50, 2, p. 291-296 6 p.

研究成果: Article

High electron mobility transistors
high electron mobility transistors
breakdown
Impact ionization
Noise figure
1 引文 (Scopus)

High-temperature characteristics of a symmetrically-graded InAlAs/In xGa1-xAs/GaAs MHEMT

Lee, C. S., Hsu, W. C., Su, K. H., Huang, J. C. & Liao, C. H., 2006 一月 1, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. IEEE Computer Society, p. 878-880 3 p. 4098263. (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

研究成果: Conference contribution

High electron mobility transistors
Temperature
Integrated circuits
Hot Temperature
18 引文 (Scopus)

High-temperature threshold characteristics of a symmetrically graded InAlAs/InxGa1-xAsGaAs metamorphic high electron mobility transistor

Lee, C. S., Chen, Y. J., Hsu, W. C., Su, K. H., Huang, J. C., Huang, D. H. & Wu, C. L., 2006 五月 29, 於 : Applied Physics Letters. 88, 22, 223506.

研究成果: Article

high electron mobility transistors
thresholds
coefficients
linearity
polarity
5 引文 (Scopus)

Improved high-temperature characteristics of a symmetrically graded AlGaAs/InxGa1-xAs/AlGaAs pHEMT

Huang, J. C., Hsu, W-C., Lee, C. S., Chang, W. C. & Huang, D. H., 2006 十二月 1, 於 : Semiconductor Science and Technology. 21, 12, p. 1675-1680 6 p., 029.

研究成果: Article

High electron mobility transistors
high electron mobility transistors
aluminum gallium arsenides
Electric potential
electric potential
7 引文 (Scopus)

Improved InAlGaP-based heterostructure field-effect transistors

Lin, Y. S., Huang, D. H., Hsu, W. C., Wang, T. B., Su, K. H., Huang, J. C. & Ho, C. H., 2006 四月 1, 於 : Semiconductor Science and Technology. 21, 4, p. 540-543 4 p.

研究成果: Article

High electron mobility transistors
field effect transistors
Indium
Metallorganic chemical vapor deposition
Transconductance
1 引文 (Scopus)
Inductively coupled plasma
mesas
Light emitting diodes
light emitting diodes
Plasmas
4 引文 (Scopus)

Magnetotransport study on the defect levels of delta-doped in 0.22Ga0.78As/GaAs quantum wells

Lo, I., Lian, J. R., Wang, H. Y., Gau, M. H., Tsai, J. K., Chiang, J. C., Li, Y. J. & Hsu, W. C., 2006 十月 9, 於 : Journal of Applied Physics. 100, 6, 063712.

研究成果: Article

quantum wells
defects
binding energy
photoconductivity
electronics
3 引文 (Scopus)

N+-GaAs/p+-InAlGaP/n+-InAlGaP camel-gate high-electron mobility transistors

Lin, Y. S., Huang, D. H., Hsu, W. C., Wang, T. B., Hsu, R. T. & Wu, Y. H., 2006 四月 10, 於 : Electrochemical and Solid-State Letters. 9, 2, p. G37-G39

研究成果: Article

High electron mobility transistors
high electron mobility transistors
Computer aided manufacturing
Metals
computer aided manufacturing