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研究成果 1981 2020

2006
2 引文 (Scopus)

Ni/Au-gate in0.45Al0.55As/In0.53Ga 0.47As/InAlGaAs/GaAs metamorphic high-electron-mobility transistors

Lee, C. S., Hsu, W-C., Su, K. H., Huang, J. C., Huang, D. H. & Chen, Y. J., 2006 四月 1, 於 : Journal of the Korean Physical Society. 48, 4, p. 653-657 5 p.

研究成果: Article

high electron mobility transistors
current density
saturation
power gain
output
26 引文 (Scopus)

Performance improvement in tensile-strained In0.5 Al0.5As/InxGa1-xAs/ In0.5Al0.5As metamorphic HEMT

Hsu, W. C., Huang, D. H., Lin, Y. S., Chen, Y. J., Huang, J. C. & Wu, C. L., 2006 三月 1, 於 : IEEE Transactions on Electron Devices. 53, 3, p. 406-412 7 p.

研究成果: Article

Cutoff frequency
Transconductance
High electron mobility transistors
Thermodynamic stability

Single mode InGaAs photonic crystal vertical-cavity surface-emitting lasers

Chen, I. L., Hsu, I. C., Lai, F. I., Chiou, C. H., Kuo, H. C., Hsu, W-C., Lin, G., Yang, H. P. D. & Chi, J. Y., 2006 十二月 1, Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006. 4628735. (Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006).

研究成果: Conference contribution

Surface emitting lasers
Laser modes
Photonic crystals
surface emitting lasers
photonics

Single mode InGaAs photonic crystal vertical-cavity surface-emitting lasers

Chen, I. L., Hsu, I. C., Lai, F. I., Chiou, C. H., Kuo, H. C., Hsu, W-C., Lin, G., Yang, H. P. D. & Chi, J. Y., 2006 一月 1, Quantum Electronics and Laser Science Conference, QELS 2006. Optical Society of America, (Optics InfoBase Conference Papers).

研究成果: Conference contribution

Surface emitting lasers
Laser modes
Photonic crystals
surface emitting lasers
photonics
6 引文 (Scopus)

Strain-relaxed in0.1Al0.25Ga0.65As/In 0.22Ga0.78As/In0.1Al0.25Ga 0.65As HEMT

Huang, D. H., Hsu, W-C., Lin, Y. S., Huang, J. C. & Wu, C. L., 2006 十月 24, 於 : Journal of the Electrochemical Society. 153, 9

研究成果: Article

High electron mobility transistors
Lattice mismatch
Electron mobility
Drain current
Electric breakdown

Temperature-dependent characteristics and burn-in performance of GaAs-based long-wavelength vertical-cavity surface-emitting lasers emitting at 1.26 νm

Chen, I. L., Hsu, W-C., Lee, T. D., Su, K. H., Chiou, C. H. & Lin, G., 2006 七月 1, 於 : Semiconductor Science and Technology. 21, 7, p. 886-889 4 p., 011.

研究成果: Article

burn-in
Surface emitting lasers
surface emitting lasers
Wavelength
cavities
2005
40 引文 (Scopus)

Characteristics of In0.425Al0.575 As-InxGa1-xAs metamorphic HEMTs with pseudomorphic and symmetrically graded channels

Hsu, W. C., Chen, Y. J., Lee, C. S., Wang, T. B., Huang, J. C., Huang, D. H., Su, K. H., Lin, Y. S. & Wu, C. L., 2005 六月 1, 於 : IEEE Transactions on Electron Devices. 52, 6, p. 1079-1086 8 p.

研究成果: Article

High electron mobility transistors
Cutoff frequency
Transconductance
Molecular beam epitaxy
Electric potential
2 引文 (Scopus)
high electron mobility transistors
transconductance
valleys
asymmetry
current density
25 引文 (Scopus)

High-temperature thermal stability performance in δ-doped In0.425Al0.575As-In0.65 Ga0.35As metamorphic HEMT

Hsu, W. C., Chen, Y. J., Lee, C. S., Wang, T. B., Lin, Y. S. & Wu, C. L., 2005 二月 1, 於 : IEEE Electron Device Letters. 26, 2, p. 59-61 3 p.

研究成果: Article

High electron mobility transistors
Thermodynamic stability
Cutoff frequency
Transconductance
Electric potential
6 引文 (Scopus)
High electron mobility transistors
high electron mobility transistors
Positive temperature coefficient
composite materials
Electron mobility
8 引文 (Scopus)

InAlAs/InGaAs doped channel heterostructure for high-linearity, high-temperature and high-breakdown operations

Chen, Y. J., Hsu, W. C., Chen, Y. W., Lin, Y. S., Hsu, R. T. & Wu, Y. H., 2005 二月 1, 於 : Solid-State Electronics. 49, 2, p. 163-166 4 p.

研究成果: Article

Transconductance
transconductance
linearity
Heterojunctions
breakdown
2 引文 (Scopus)

Investigations of δ-doped in0.52Al0.48As/ InxGai1-xAs/InP HEMTs with different channel structures

Lee, C. S., Chen, H. H., Huang, J. C., Hsu, W-C. & Chen, Y. J., 2005 十二月, 於 : Journal of the Korean Physical Society. 47, 6, p. 1046-1052 7 p.

研究成果: Article

high electron mobility transistors
electric potential
metalorganic chemical vapor deposition
low pressure
current density
2 引文 (Scopus)
High electron mobility transistors
high electron mobility transistors
Transistors
transistors
Carrier transport
5 引文 (Scopus)

Low-threshold-current-density, long-wavelength, highly strained ingaas laser grown by metalorganic chemical vapor deposition

Chen, I. L., Hsu, W-C., Kuo, H. C., Yu, H. C., Sung, C. P., Lu, C. M., Chiou, C. H., Wang, J. M., Chang, Y. H., Lee, T. D. & Wang, J. S., 2005 十月 11, 於 : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 44, 10, p. 7485-7487 3 p.

研究成果: Article

Threshold current density
Metallorganic chemical vapor deposition
threshold currents
Semiconductor quantum wells
metalorganic chemical vapor deposition
9 引文 (Scopus)

Monolithic AlAs-InGaAs-InGaP-GaAs HRT-FETS with PVCR of 960 at 300 K

Lee, C. S., Hsu, W. C., Huang, J. C., Chen, Y. J. & Chen, H. H., 2005 二月 1, 於 : IEEE Electron Device Letters. 26, 2, p. 50-52 3 p.

研究成果: Article

Resonant tunneling
Current density
High electron mobility transistors
Field effect transistors
Controllability
2004
4 引文 (Scopus)

Analytic modeling for current-voltage characteristics and drain-induced barrier-lowering (DIBL) phenomenon of the InGaP/InGaAs/GaAs PDCFET

Lee, C. S., Yang, W. L., Chen, H. H., Hsu, W-C., Chen, Y. J. & Huang, J. C., 2004 十二月 1, 於 : Journal of the Korean Physical Society. 45, SUPPL.

研究成果: Article

field effect transistors
electric potential
Newton methods
Poisson equation
nonlinear equations
4 引文 (Scopus)

Characteristics of GaAs-based long-wavelength, highly strained InGaAs quantum well vertical-cavity laser

Chen, I. L., Hsu, W-C., Lu, C. M., Chiou, C. H., Lee, Z. H. & Lee, T. D., 2004 六月 1, 於 : Japanese Journal of Applied Physics, Part 2: Letters. 43, 6 A

研究成果: Article

laser cavities
surface emitting lasers
quantum wells
cavities
wavelengths
27 引文 (Scopus)

Characteristics of In0.52Al0.48As/In x Ga 1-x As HEMT's with various In x Ga 1-x As channels

Chen, Y. W., Hsu, W-C., Hsu, R. T., Wu, Y. H. & Chen, Y. J., 2004 一月 1, 於 : Solid-State Electronics. 48, 1, p. 119-124 6 p.

研究成果: Article

Transconductance
High electron mobility transistors
high electron mobility transistors
Leakage currents
transconductance
3 引文 (Scopus)
Organic chemicals
Transconductance
High electron mobility transistors
high electron mobility transistors
Electric breakdown
7 引文 (Scopus)

Characteristics of spike-free single and double heterostructure-emitter bipolar transistors

Lin, Y. S., Hsu, W. C., Jong, F. C., Chiou, Y. Z., Chen, Y. J. & Tang, J. J., 2004 六月, 於 : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 43, 6 A, p. 3285-3288 4 p.

研究成果: Article

Bipolar transistors
Poisson equation
bipolar transistors
spikes
spacers
6 引文 (Scopus)
transconductance
high electron mobility transistors
plateaus
smoothing
spacers
3 引文 (Scopus)
Hot electrons
High electron mobility transistors
high electron mobility transistors
Threshold voltage
Tunnels
15 引文 (Scopus)

Gate-alloy-related kink effect for metamorphic high-electron-mobility transistors

Chen, Y. J., Hsu, W. C., Lee, C. S., Wang, T. B., Tseng, C. H., Huang, J. C., Huang, D. H. & Wu, C. L., 2004 十一月 1, 於 : Applied Physics Letters. 85, 21, p. 5087-5089 3 p.

研究成果: Article

high electron mobility transistors
metals
output
3 引文 (Scopus)
Electron mobility
Cutoff frequency
High electron mobility transistors
high electron mobility transistors
Surface roughness
6 引文 (Scopus)
Drain current
High electron mobility transistors
Current density
field effect transistors
Electron mobility

In0.425Al0.575As/In0.65Ga 0.35As metamorphic HEMT on GaAs

Chen, Y. J., Wang, Z. B., Su, K. H. & Hsu, W. C., 2004 十二月 1, IVESC2004 - 5th International Vacuum Electron Sources Conference Proceedings. p. 372-374 3 p. (IVESC2004 - 5th International Vacuum Electron Sources Conference Proceedings).

研究成果: Conference contribution

Transconductance
High electron mobility transistors
Electric breakdown
Energy gap
Current density

Investigation of step graded channel heterostructure field effect transistor with high gate voltage swing

Yu, S. J., Hsu, W-C., Li, Y. J. & Chen, Y. J., 2004 八月 16, Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004. Qu, X. P., Ru, G. P., Li, B. Z., Mizuno, B. & Iwai, H. (編輯). Institute of Electrical and Electronics Engineers Inc., 卷 4. p. 210-212 3 p.

研究成果: Conference contribution

Drain current
High electron mobility transistors
Current density
Electron mobility
Transconductance
2003
1 引文 (Scopus)
Two dimensional electron gas
Transconductance
High electron mobility transistors
transconductance
high electron mobility transistors
8 引文 (Scopus)
High electron mobility transistors
high electron mobility transistors
Electric breakdown
electrical faults
aluminum gallium arsenides
7 引文 (Scopus)

Investigation of InGaP/GaAs heterojunction bipolar transistor with doping graded base

Chen, Y. W., Hsu, W-C., Hsu, R. T., Wu, Y. H., Chen, Y. J. & Lin, Y. S., 2003 十一月 1, 於 : Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21, 6, p. 2555-2557 3 p.

研究成果: Article

Gallium arsenide
Heterojunction bipolar transistors
bipolar transistors
gallium
heterojunctions
2 引文 (Scopus)

Low dark current InGaAs(P)/InP p-i-n photodiodes

Chen, Y. W., Hsu, W. C. & Chen, Y. J., 2003 一月 1, Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003. Chan, K. T. & Kwok, H. S. (編輯). Institute of Electrical and Electronics Engineers Inc., p. 95-98 4 p. 1278173. (Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003).

研究成果: Conference contribution

Dark currents
Photodiodes
Energy gap
Epitaxial layers
Metallorganic chemical vapor deposition
8 引文 (Scopus)

Low dark current InGaAs(P)/InP p-i-n photodiodes

Chen, Y. W., Hsu, W-C., Hsu, R. T., Wu, Y. H. & Chen, Y. J., 2003 七月 1, 於 : Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 42, 7 A, p. 4249-4252 4 p.

研究成果: Article

Dark currents
dark current
Photodiodes
photodiodes
Energy gap
1 引文 (Scopus)
High electron mobility transistors
high electron mobility transistors
breakdown
Thermionic emission
Impact ionization
14 引文 (Scopus)
High electron mobility transistors
Buffer layers
aluminum gallium arsenides
Heterojunctions
heterojunctions
2002
6 引文 (Scopus)
Field effect transistors
field effect transistors
Newton-Raphson method
Nonlinear equations
Electric potential
8 引文 (Scopus)

Characteristics of δ-doped InP heterostructures using In 0.34Al 0.66As 0.85Sb 0.15 Schottky layer

Hsu, W. C., Lee, C. S. & Lin, Y. S., 2002 二月 1, 於 : Journal of Applied Physics. 91, 3, p. 1385-1390 6 p.

研究成果: Article

carrier mobility
secondary ion mass spectrometry
metalorganic chemical vapor deposition
energy bands
specifications
Superlattices
Current voltage characteristics
Field effect transistors
superlattices
field effect transistors
32 引文 (Scopus)

High breakdown characteristic δ-doped InGaP/InGaAs/AlGaAs tunneling real-space transfer HEMT

Chen, Y. W., Hsu, W. C., Shieh, H. M., Chen, Y. J., Lin, Y. S., Li, Y. J. & Wang, T. B., 2002 二月 1, 於 : IEEE Transactions on Electron Devices. 49, 2, p. 221-225 5 p.

研究成果: Article

High electron mobility transistors
Electric breakdown
Organic Chemicals
Hot electrons
Organic chemicals

High breakdown InGaP/InGaAs tunneling real space transfer HEMT

Chen, Y. W. & Hsu, W-C., 2002 一月 1, 2002 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2002 - Proceedings. Gal, M. (編輯). Institute of Electrical and Electronics Engineers Inc., p. 401-404 4 p. 1237275. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD; 卷 2002-January).

研究成果: Conference contribution

High electron mobility transistors
Electric breakdown
Organic Chemicals
Hot electrons
Organic chemicals
2001
2 引文 (Scopus)
Poisson equation
Current voltage characteristics
Field effect transistors
field effect transistors
Metals
2 引文 (Scopus)

An improved In0.34Al0.66As0.85Sb0.15/InP heterostructure utilizing coupled δ-doping InP channel

Chen, Y. J., Chen, Y. W., Lin, Y. S., Yeh, C. Y., Li, Y. J. & Hsu, W-C., 2001 一月 15, 於 : Japanese Journal of Applied Physics, Part 2: Letters. 40, 1 A/B

研究成果: Article

High electron mobility transistors
Heterojunctions
field effect transistors
Doping (additives)
Electron mobility
6 引文 (Scopus)
High electron mobility transistors
high electron mobility transistors
spacers
Two dimensional electron gas
Electron mobility
2000
6 引文 (Scopus)

High-temperature breakdown characteristics of δ-doped In0.49Ga0.51P/GaAs/In0.25Ga0.75As/AlGaAs high electron mobility transistor

Lee, C. S., Hsu, W. C., Chen, Y. W., Chen, Y. C. & Shieh, H. M., 2000 十月 15, 於 : Japanese journal of applied physics. 39, 10 B, p. L1029-L1031

研究成果: Article

High electron mobility transistors
high electron mobility transistors
Electric breakdown
electrical faults
aluminum gallium arsenides
16 引文 (Scopus)

In0.34Al0.66As0.85Sb 0.15/δ(n+)-InP heterostructure field-effect transistors

Lin, Y. S., Hsu, W. C., Yeh, C. Y. & Shieh, H. M., 2000 五月 22, 於 : Applied Physics Letters. 76, 21, p. 3124-3126 3 p.

研究成果: Article

electrical faults
field effect transistors
heterojunctions
discontinuity
conduction bands
2 引文 (Scopus)

Investigation of a graded channel InGaAs/GaAs heterostructure transistor

Li, Y. J., Su, J. S., Lin, Y. S. & Hsu, W. C., 2000 七月, 於 : Unknown Journal. 28, 1, p. 47-54 8 p.

研究成果: Article

Electron mobility
Transconductance
Heterojunctions
Chemical vapor deposition
Buffers
4 引文 (Scopus)

Novel dual-mode In0.34Al0.66As0.85Sb0.15/In0.75Ga0.25As/InP inverted δ-doped heterostructure field-effect transistor

Lee, C. S., Hsu, W-C., Shieh, H. M., Su, J. S., Jain, S. Y. & Lin, W., 2000 九月 1, 於 : Solid-State Electronics. 44, 9, p. 1635-1640 6 p.

研究成果: Article

High electron mobility transistors
field effect transistors
Field effect transistors
Low pressure chemical vapor deposition
Ohmic contacts
1999
18 引文 (Scopus)

High breakdown voltage symmetric double δ-doped In0.49Ga0.51P/In0.25Ga0.75As/GaAs high electron mobility transistor

Lin, Y. S., Hsu, W-C., Wu, C. H., Lin, W. & Hsu, R. T., 1999 九月 13, 於 : Applied Physics Letters. 75, 11, p. 1616-1618 3 p.

研究成果: Article

high electron mobility transistors
electrical faults
augmentation
electric potential
2 引文 (Scopus)

Improved double delta-doped InGaAs/GaAs heterostructures with symmetric graded channel

Li, Y. J., Shieh, H. M., Su, J. S., Kao, M. J. & Hsu, W. C., 1999 十一月 1, 於 : Materials Chemistry and Physics. 61, 3, p. 266-269 4 p.

研究成果: Article

Two dimensional electron gas
Organic chemicals
Transconductance
Field effect transistors
Heterojunctions
7 引文 (Scopus)

Improved heterojunction-emitter bipolar transistor using δ-doped and spacer layers

Lin, Y. S., Hsu, W-C., Lu, S. Y., Su, J. S. & Lin, W., 1999 四月 30, 於 : Materials Chemistry and Physics. 59, 1, p. 91-95 5 p.

研究成果: Article

Bipolar transistors
bipolar transistors
spacers
Heterojunctions
heterojunctions