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研究成果

1999
6 引文 斯高帕斯(Scopus)
1998

Electrical characteristics of heterostructure-emitter bipolar transistors using spacer layers

Lin, Y. S., Shieh, H. M., Hsu, W-C., Su, J. S., Huang, J. Z., Wu, Y. H., Ho, S. D. & Lin, W., 1998 五月 1, 於 : Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16, 3, p. 958-961 4 p.

研究成果: Article

11 引文 斯高帕斯(Scopus)
9 引文 斯高帕斯(Scopus)
2 引文 斯高帕斯(Scopus)
1997
27 引文 斯高帕斯(Scopus)
2 引文 斯高帕斯(Scopus)

Enhanced real-space transfer in δ-doped GaAs/In0.1Ga0.9AS/In0.25Ga0.75As two-step channel heterojunctions

Su, J. S., Hsu, W. C., Lin, W. & Lin, Y. S., 1997 十月 15, 於 : Journal of Applied Physics. 82, 8, p. 4076-4080 5 p.

研究成果: Article

4 引文 斯高帕斯(Scopus)
1996

Anomalous negative-differential-resistance (NDR) characteristics of n+ -GaAs/n- -GaAs/n+ -In0.2Ga0.8As/i-GaAs structure

Laih, L. W., Liu, W. C., Tsai, J. H., Hsu, W. C., Ting, Y. T. & Liu, R. C., 1996 六月, 於 : Superlattices and Microstructures. 20, 1, p. 7-13 7 p.

研究成果: Article

A novel InAlAs/InGaAs two-terminal real-space transfer diode

Su, J. S., Hsu, W-C., Lin, Y. S., Lin, W., Wu, C. L., Tsai, M. S. & Wu, Y. H., 1996 二月 1, 於 : IEEE Electron Device Letters. 17, 2, p. 43-45 3 p.

研究成果: Article

7 引文 斯高帕斯(Scopus)
27 引文 斯高帕斯(Scopus)

High-breakdown voltage Al0.66In0.34As0.85Sb0.15/In 0.75Ga0.25As/InP heterostructure field-effect transistors

Su, J. S., Hsu, W. C., Lin, D. T., Lin, W., Shiao, H. P., Lin, Y. S., Huang, J. Z. & Chou, P. J., 1996 十月 24, 於 : Electronics Letters. 32, 22, p. 2095-2097 3 p.

研究成果: Article

20 引文 斯高帕斯(Scopus)

Investigation of the electron transfer characteristics in multi-δ-doped GaAs FET's

Kao, M. J., Shieh, H. M., Hsu, W. C., Lin, T. Y., Wu, Y. H. & Hsu, R. T., 1996 十二月 1, 於 : IEEE Transactions on Electron Devices. 43, 8, p. 1181-1186 6 p.

研究成果: Article

19 引文 斯高帕斯(Scopus)

Photoinduced electron coupling in δ-doped GaAAs quantum wells

Lo, I., Kao, M. & Hsu, W., 1996 一月 1, 於 : Physical Review B - Condensed Matter and Materials Physics. 54, 7, p. 4774-4779 6 p.

研究成果: Article

13 引文 斯高帕斯(Scopus)
4 引文 斯高帕斯(Scopus)
1995
1 引文 斯高帕斯(Scopus)
29 引文 斯高帕斯(Scopus)

Characteristics of a GaAs-InGaAs quantum-well resonant-tunneling switch

Guo, D. F., Laih, L. W., Tsai, J. H., Liu, W. C. & Hsu, W. C., 1995 十二月 1, 於 : Journal of Applied Physics. 77, 6, p. 2782-2785 4 p.

研究成果: Article

2 引文 斯高帕斯(Scopus)
10 引文 斯高帕斯(Scopus)

Characteristics of graded-like multiple-delta-doped GaAs field effect transistors

Kao, M. J., Hsu, W. C., Hsu, R. T., Wu, Y. H., Lin, T. Y. & Chang, C. Y., 1995 十二月 1, 於 : Applied Physics Letters. 1 p.

研究成果: Article

10 引文 斯高帕斯(Scopus)
7 引文 斯高帕斯(Scopus)
2 引文 斯高帕斯(Scopus)
17 引文 斯高帕斯(Scopus)

Depletion-MIS-like InGaAs/GaAs delta-doped structures with high breakdown voltage and large gate voltage swing

Wu, C. L., Hsu, W. C., Shieh, H. M. & Kao, M. J., 1995 二月, 於 : Solid State Electronics. 38, 2, p. 433-436 4 p.

研究成果: Article

1 引文 斯高帕斯(Scopus)
3 引文 斯高帕斯(Scopus)

Emitter edge-thinning effect on ingaas/inp double-heterostructure-emitter bipolar transistor

Wu, Y. H., Su, J. S., Hsu, W. C., Lin, W., Liu, W. C., Kao, M. J. & Hsu, R. T., 1995 十一月, 於 : Japanese Journal of Applied Physics. 34, 11R, p. 5908-5911 4 p.

研究成果: Article

3 引文 斯高帕斯(Scopus)
6 引文 斯高帕斯(Scopus)

Investigation of an InGaAsGaAs doped-channel MIS-like pseudomorphic transistor

Laih, L. W., Tsai, J. H., Liu, W-C., Hsu, W-C. & Lour, W. S., 1995 一月 1, 於 : Solid State Electronics. 38, 10, p. 1747-1753 7 p.

研究成果: Article

11 引文 斯高帕斯(Scopus)

Observation of the anomalous current-voltage characteristics of GaAs/n +-InGaAs/GaAs doped-channel structure

Liu, W-C., Laih, L. W., Tsai, J. H., Hsu, W-C., Wu, C. Z., Thei, K. B. & Lour, W. S., 1995 十二月 1, 於 : Applied Physics Letters. 67, 1 p.

研究成果: Article

5 引文 斯高帕斯(Scopus)
13 引文 斯高帕斯(Scopus)
10 引文 斯高帕斯(Scopus)
1994

A four-terminal gaas multiple-function transistor with a buried silicon-doping quantum well

Wu, C. L., Hsu, W. C., Tsai, M. S. & Shieh, H. M., 1994 十月, 於 : Japanese Journal of Applied Physics. 33, 10A, p. 1393-1395 3 p.

研究成果: Article

1 引文 斯高帕斯(Scopus)

A High Performance Symmetric Double 6-Doped GaAs/InGaAs/GaAs Pseudomorphic HFET’s Grown by MOCVD

Hsu, W. C., Shieh, H. M., Wu, C. L. & Wu, T. S., 1994 三月, 於 : IEEE Transactions on Electron Devices. 41, 3, p. 456-457 2 p.

研究成果: Article

26 引文 斯高帕斯(Scopus)

A new In0.53Al0.22Ga0.25As/InP heterojunction bipolar transistor grown by LP-MOCVD

Wu, Y. H., Su, J. S., Hsu, W-C., Liu, W-C. & Lin, W., 1994 一月 1, European Solid-State Device Research Conference. Ashburn, P. & Hill, C. (編輯). IEEE Computer Society, p. 455-458 4 p. 5435758. (European Solid-State Device Research Conference).

研究成果: Conference contribution

An Improved Inverted δ-Doped GaAs/InGaAs Pseudomorphic Heterostructure Grown by MOCVD

Wu, C. L., Hsu, W. C., Shieh, H. M. & Tsai, M. S., 1994 九月, 於 : IEEE Electron Device Letters. 15, 9, p. 330-332 3 p.

研究成果: Article

10 引文 斯高帕斯(Scopus)
10 引文 斯高帕斯(Scopus)

High carrier density and mobility in GaAs/InGaAs/GaAs double delta-doped channels heterostructures

Kao, M. J., Hsu, W. C., Liu, W. C. & Shieh, H. M., 1994 一月 1, European Solid-State Device Research Conference. Ashburn, P. & Hill, C. (編輯). IEEE Computer Society, p. 559-562 4 p. 5435780. (European Solid-State Device Research Conference).

研究成果: Conference contribution

High performance three-terminal δ-doped GaAs negative resistance field-effect transistor based on real-space transfer

Wu, C. L., Hsu, W. C., Tsai, M. S. & Shieh, H. M., 1994 一月 1, 於 : Electronics Letters. 30, 18, p. 1537-1539 3 p.

研究成果: Article

2 引文 斯高帕斯(Scopus)

Mobility enhancement in a highly strained δ-doped In0.9 Ga0.1 P/In0.75 Ga0.25 As/In0.53 Ga0.47 As/InP heterostructure

Hsu, R. T., Lin, W., Kao, M. J., Wu, Y. H. & Hsu, W. C., 1994 六月 1, 於 : Thin Solid Films. 245, 1-2, p. 164-166 3 p.

研究成果: Article

12 引文 斯高帕斯(Scopus)
4 引文 斯高帕斯(Scopus)
1993

A High-Performance S-Doped GaAs/InxGa1_xAs Pseudomorphic High Electron Mobility Transistor Utilizing a Graded InxGaj_xAs Channel

Shieh, H. M., Hsu, W. C., Hsu, R. T., Wu, C. L. & Wu, T. S., 1993 十二月, 於 : IEEE Electron Device Letters. 14, 12, p. 581-583 3 p.

研究成果: Article

15 引文 斯高帕斯(Scopus)

A new δ-doped InGaAs/GaAs pseudomorphic high electron mobility transistor utilizing a strained superlattice spacer

Shieh, H. M., Hsu, W. C., Kao, M. J., Wu, C. L. & Wu, T. S., 1993 八月, 於 : Solid State Electronics. 36, 8, p. 1117-1119 3 p.

研究成果: Article

1 引文 斯高帕斯(Scopus)

Application Of Doping-Superlattice Collector Structure For Gaas Bipolar Transistor

Liu, W. C., Sun, C. Y., Hsu, W. C. & Guo, D. F., 1993 四月, 於 : Japanese Journal of Applied Physics. 32, 4 R, p. 1575-1582 8 p.

研究成果: Article

1 引文 斯高帕斯(Scopus)

A tristate switching device with double delta-doped quantum well structure

Hsu, W. C., Guo, D. F., Liu, W. C. & Lour, W. S., 1993 八月, 於 : Solid State Electronics. 36, 8, p. 1089-1092 4 p.

研究成果: Article

3 引文 斯高帕斯(Scopus)

Broad transconductance plateau region and high current GaAs/InGaAs pseudomorphic HENT's utilizing a graded InxGa1-xAs channel

Hsu, W. C., Shieh, H. M., Wu, Y. H. & Hsu, R. T., 1993 一月 1, ESSDERC 1993 - Proceedings of the 23rd European Solid State Device Research Conference. Noblanc, J. P., Gentil, P., Verdone, M., Borel, J. & Nouailhat, A. (編輯). IEEE Computer Society, p. 761-764 4 p. 5435602. (European Solid-State Device Research Conference).

研究成果: Conference contribution

Characteristics of a GaAs-InGaAs delta-doped quantum-well switch

Hsu, W-C., Guo, D. F., Liu, W-C. & Lour, W. S., 1993 十二月 1, 於 : Journal of Applied Physics. 73, 12, p. 8615-8617 3 p.

研究成果: Article

2 引文 斯高帕斯(Scopus)

Comparison of droplet combustion models in spray combustion

Jiang, T-L. & Hsu, W-C., 1993 一月 1, 於 : Journal of Propulsion and Power. 9, 4, p. 644-646 3 p.

研究成果: Comment/debate

3 引文 斯高帕斯(Scopus)

Enhanced current driving capability GaAs/graded InxGa1-xAs/GaAs high electron mobility transistor

Hsu, R. T., Shieh, H. M., Hsu, W. C. & Wu, T. S., 1993 八月, 於 : Solid State Electronics. 36, 8, p. 1143-1146 4 p.

研究成果: Article

1 引文 斯高帕斯(Scopus)