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查看斯高帕斯 (Scopus) 概要
李 文熙
教授
電機工程學系
電話
886 6 2757575 ext 62445
電子郵件
leewen
mail.ncku.edu
tw
網站
http://www.ee.ncku.edu.tw/subpage_div/teacher_new_2/index2.php?teacher_id=158
h-index
1791
引文
21
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
2000
2022
每年研究成果
概覽
指紋
網路
專案
(34)
研究成果
(187)
類似的個人檔案
(6)
監製作品
(56)
指紋
查看啟用 Wen-Shi Lee 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Material Science
Film
100%
Dielectric Material
60%
Dielectric Property
53%
Thin Films
46%
Sintering
39%
Annealing
39%
Density
28%
Nanocomposite
28%
Electroplating
27%
Permittivity
25%
Capacitor Ceramics
25%
Thin-Film Transistor
25%
Titanium Dioxide
23%
Chemical Mechanical Planarization
23%
Capacitance
22%
Surface (Surface Science)
21%
Sintering Temperature
21%
X-Ray Diffraction
21%
Doping (Additives)
19%
Electrodeposition
19%
ZnO
19%
Plating
18%
Scanning Electron Microscopy
18%
Oxide Compound
17%
Solar Cell
16%
Varistors
16%
Capacitor
15%
Grain Size
15%
Polyimide
14%
Titanium Oxide
13%
Dye-Sensitized Solar Cell
13%
Electronic Circuit
13%
Ruthenium
12%
Composite Material
12%
Magnetic Property
12%
Silicon
11%
Dielectric Film
11%
Aluminum Oxide
11%
Corrosion
10%
Grain Boundary
10%
Field Effect Transistor
10%
Germanium
10%
Nanoparticle
9%
Indium
9%
Dielectric Spectroscopy
9%
Tungsten
8%
Multilayer
8%
Three Dimensional Printing
8%
Manganese
8%
Tantalum
7%
Engineering
Thin Films
40%
Dielectrics
38%
Cu Film
15%
Solar Cell
15%
Ray Diffraction
14%
Deposited Film
14%
Annealing Temperature
12%
Barrier Layer
12%
Chemical Mechanical Polishing
12%
Dopants
11%
Sintering
11%
Sheet Resistance
9%
Porosity
9%
Low-Temperature
9%
Annealing Process
9%
Raman Spectra
8%
Copper (Cu)
8%
Conversion Efficiency
8%
Antenna
8%
Nanocomposite
8%
Diffusion Barrier
7%
Breakdown Voltage
7%
Flow Rate
7%
Flow Velocity
7%
Surface Morphology
7%
Silicon Dioxide
7%
Ion Implantation
7%
Dopant Activation
6%
Equivalent Circuit
6%
Pentacene
6%
Nitride
6%
Glass Substrate
6%
Metallizations
5%
Oxygen Vacancy
5%
Main Result
5%
Field-Effect Transistor
5%
Oxygen Partial Pressure
5%
Three Dimensional Printing
5%
Shallow Junction
5%
Polishing Slurry
5%
Thermal Energy
5%
Cu Surface
5%
Solid Solubility Limit
5%
Ge Crystal
5%
Sintering Temperature
5%
Crystalline Quality
5%
Gate Dielectric
5%
Film Resistor
5%
Selective Laser Melting
5%
Barrier Property
5%
Keyphrases
Electrical Properties
11%
Microstructure Properties
11%
Multilayer Ceramic Capacitor
10%
Varistor
10%
Inner Electrode
8%
Ruthenium
8%
Reducing Atmosphere
8%
Sintering Temperature
7%
Dielectric Properties
7%
Annealing
7%
Resistors
6%
Dye-sensitized Solar Cells
6%
TiZr
6%
Microwave Dielectric Properties
6%
Cu Seed
6%
X Ray Diffraction
5%
Electroplating
5%
Grain Size
5%
Cu Metallization
5%
Iron-based Alloy Powder
5%
Chemical Mechanical Polishing
5%
Plating Ability
5%
CuInS2 Thin Films
5%
Photo-assistance
5%
Mg-Zn
5%
Barrier Film
5%
Copper-manganese Alloy
5%
B2O3 Addition
5%
TaNx
5%
Ge Crystal
5%
High Temperature Implantation
5%
Pentacene Field-effect Transistor
5%
Organic Dyestuff
5%
Copper Indium Selenide
5%
Dielectric Constant
5%
