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查看斯高帕斯 (Scopus) 概要
李 文熙
教授
電機工程學系
電話
886 6 2757575 ext 62445
電子郵件
leewen
mail.ncku.edu
tw
網站
http://www.ee.ncku.edu.tw/subpage_div/teacher_new_2/index2.php?teacher_id=158
h-index
1852
引文
21
h-指數
按照存儲在普爾（Pure）的出版物數量及斯高帕斯（Scopus）引文計算。
2000
2022
每年研究成果
概覽
指紋
網路
專案
(34)
研究成果
(187)
類似的個人檔案
(6)
監製作品
(56)
指紋
查看啟用 Wen-Shi Lee 的研究主題。這些主題標籤來自此人的作品。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Material Science
Aluminum Oxide
11%
Annealing
39%
Capacitance
22%
Capacitor
15%
Capacitor Ceramics
25%
Chemical Mechanical Planarization
23%
Composite Material
12%
Corrosion
10%
Density
28%
Dielectric Film
11%
Dielectric Material
60%
Dielectric Property
53%
Dielectric Spectroscopy
9%
Doping (Additives)
19%
Dye-Sensitized Solar Cell
13%
Electrodeposition
19%
Electronic Circuit
13%
Electroplating
27%
Field Effect Transistor
10%
Film
100%
Germanium
10%
Grain Boundary
10%
Grain Size
15%
Indium
9%
Magnetic Property
12%
Manganese
8%
Multilayer
8%
Nanocomposite
28%
Nanoparticle
9%
Oxide Compound
17%
Permittivity
25%
Plating
18%
Polyimide
14%
Ruthenium
12%
Scanning Electron Microscopy
18%
Silicon
11%
Sintering
39%
Sintering Temperature
21%
Solar Cell
16%
Surface (Surface Science)
21%
Tantalum
7%
Thin Films
46%
Thin-Film Transistor
25%
Three Dimensional Printing
8%
Titanium Dioxide
23%
Titanium Oxide
13%
Tungsten
8%
Varistors
16%
X-Ray Diffraction
21%
ZnO
19%
Engineering
Annealing Process
9%
Annealing Temperature
12%
Antenna
8%
Barrier Layer
12%
Barrier Property
5%
Breakdown Voltage
7%
Chemical Mechanical Polishing
12%
Conversion Efficiency
8%
Copper (Cu)
8%
Crystalline Quality
5%
Cu Film
15%
Cu Surface
5%
Deposited Film
14%
Dielectrics
38%
Diffusion Barrier
7%
Dopant Activation
6%
Dopants
11%
Equivalent Circuit
6%
Field-Effect Transistor
5%
Film Resistor
5%
Flow Rate
7%
Flow Velocity
7%
Gate Dielectric
5%
Ge Crystal
5%
Glass Substrate
6%
Ion Implantation
7%
Low-Temperature
9%
Main Result
5%
Metallizations
5%
Nanocomposite
8%
Nitride
6%
Oxygen Partial Pressure
5%
Oxygen Vacancy
5%
Pentacene
6%
Polishing Slurry
5%
Porosity
9%
Raman Spectra
8%
Ray Diffraction
14%
Selective Laser Melting
5%
Shallow Junction
5%
Sheet Resistance
9%
Silicon Dioxide
7%
Sintering
11%
Sintering Temperature
5%
Solar Cell
15%
Solid Solubility Limit
5%
Surface Morphology
7%
Thermal Energy
5%
Thin Films
40%
Three Dimensional Printing
5%
Keyphrases
Annealing
7%
B2O3 Addition
5%
Barrier Film
5%
Chemical Mechanical Polishing
5%
Copper Indium Selenide
5%
Copper-manganese Alloy
5%
Cu Metallization
5%
Cu Seed
6%
CuInS2 Thin Films
5%
Dielectric Constant
5%
Dielectric Properties
7%
Dye-sensitized Solar Cells
6%
Electrical Properties
11%
Electroplating
5%
Ge Crystal
5%
Grain Size
5%
High Temperature Implantation
5%
Inner Electrode
8%
Iron-based Alloy Powder
5%
Mg-Zn
5%
Microstructure Properties
11%
Microwave Dielectric Properties
6%
Multilayer Ceramic Capacitor
10%
Organic Dyestuff
5%
Pentacene Field-effect Transistor
5%
Photo-assistance
5%
Plating Ability
5%
Reducing Atmosphere
8%
Resistors
6%
Ruthenium
8%
Sintering Temperature
7%
TaNx
5%
TiZr
6%
Varistor
10%
X Ray Diffraction
5%
