β-Ga2O3 defect study by steady-state capacitance spectroscopy

Shin Sheng Huang, Roberto Lopez, Sanjoy Paul, Adam T. Neal, Shin Mou, Mau Phon Houng, Jian V. Li

研究成果: Article

5 引文 斯高帕斯(Scopus)

摘要

We use steady-state capacitance measurement originally intended for capacitance-voltage experiment to observe and characterize the electrical properties of deep defects in β-Ga2O3 semiconductors. We detect a deep level located 0.81 eV below the conduction band edge with a concentration of 1.2 ' 1016 cm%3 and a capture cross-section of 1.1 ' 10%14 cm2, making it potentially influential in determining the performance of β-Ga2O3 based power electronic and optoelectronic devices. This deep level may dominate the thermal activation of off-state drain current in β-Ga2O3 transistors at high temperatures and, together with another shallower level at 0.13 eV, may substantially lower the breakdown voltage in Schottky diodes.

原文English
文章編號091101
期刊Japanese Journal of Applied Physics
57
發行號9
DOIs
出版狀態Published - 2018 九月

    指紋

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

引用此