β-Ga2O3 defect study by steady-state capacitance spectroscopy

Shin Sheng Huang, Roberto Lopez, Sanjoy Paul, Adam T. Neal, Shin Mou, Mau Phon Houng, Jian V. Li

研究成果: Article

4 引文 (Scopus)

摘要

We use steady-state capacitance measurement originally intended for capacitance-voltage experiment to observe and characterize the electrical properties of deep defects in β-Ga2O3 semiconductors. We detect a deep level located 0.81 eV below the conduction band edge with a concentration of 1.2 ' 1016 cm%3 and a capture cross-section of 1.1 ' 10%14 cm2, making it potentially influential in determining the performance of β-Ga2O3 based power electronic and optoelectronic devices. This deep level may dominate the thermal activation of off-state drain current in β-Ga2O3 transistors at high temperatures and, together with another shallower level at 0.13 eV, may substantially lower the breakdown voltage in Schottky diodes.

原文English
文章編號091101
期刊Japanese Journal of Applied Physics
57
發行號9
DOIs
出版狀態Published - 2018 九月

指紋

Capacitance measurement
Drain current
Power electronics
Conduction bands
Electric breakdown
Optoelectronic devices
Transistors
Diodes
Electric properties
Capacitance
capacitance
Chemical activation
Spectroscopy
Semiconductor materials
Defects
defects
Electric potential
spectroscopy
Experiments
optoelectronic devices

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

引用此文

Huang, Shin Sheng ; Lopez, Roberto ; Paul, Sanjoy ; Neal, Adam T. ; Mou, Shin ; Houng, Mau Phon ; Li, Jian V. / β-Ga2O3 defect study by steady-state capacitance spectroscopy. 於: Japanese Journal of Applied Physics. 2018 ; 卷 57, 編號 9.
@article{973d777dded942e58c97f91055843b3d,
title = "β-Ga2O3 defect study by steady-state capacitance spectroscopy",
abstract = "We use steady-state capacitance measurement originally intended for capacitance-voltage experiment to observe and characterize the electrical properties of deep defects in β-Ga2O3 semiconductors. We detect a deep level located 0.81 eV below the conduction band edge with a concentration of 1.2 ' 1016 cm{\%}3 and a capture cross-section of 1.1 ' 10{\%}14 cm2, making it potentially influential in determining the performance of β-Ga2O3 based power electronic and optoelectronic devices. This deep level may dominate the thermal activation of off-state drain current in β-Ga2O3 transistors at high temperatures and, together with another shallower level at 0.13 eV, may substantially lower the breakdown voltage in Schottky diodes.",
author = "Huang, {Shin Sheng} and Roberto Lopez and Sanjoy Paul and Neal, {Adam T.} and Shin Mou and Houng, {Mau Phon} and Li, {Jian V.}",
year = "2018",
month = "9",
doi = "10.7567/JJAP.57.091101",
language = "English",
volume = "57",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "9",

}

β-Ga2O3 defect study by steady-state capacitance spectroscopy. / Huang, Shin Sheng; Lopez, Roberto; Paul, Sanjoy; Neal, Adam T.; Mou, Shin; Houng, Mau Phon; Li, Jian V.

於: Japanese Journal of Applied Physics, 卷 57, 編號 9, 091101, 09.2018.

研究成果: Article

TY - JOUR

T1 - β-Ga2O3 defect study by steady-state capacitance spectroscopy

AU - Huang, Shin Sheng

AU - Lopez, Roberto

AU - Paul, Sanjoy

AU - Neal, Adam T.

AU - Mou, Shin

AU - Houng, Mau Phon

AU - Li, Jian V.

PY - 2018/9

Y1 - 2018/9

N2 - We use steady-state capacitance measurement originally intended for capacitance-voltage experiment to observe and characterize the electrical properties of deep defects in β-Ga2O3 semiconductors. We detect a deep level located 0.81 eV below the conduction band edge with a concentration of 1.2 ' 1016 cm%3 and a capture cross-section of 1.1 ' 10%14 cm2, making it potentially influential in determining the performance of β-Ga2O3 based power electronic and optoelectronic devices. This deep level may dominate the thermal activation of off-state drain current in β-Ga2O3 transistors at high temperatures and, together with another shallower level at 0.13 eV, may substantially lower the breakdown voltage in Schottky diodes.

AB - We use steady-state capacitance measurement originally intended for capacitance-voltage experiment to observe and characterize the electrical properties of deep defects in β-Ga2O3 semiconductors. We detect a deep level located 0.81 eV below the conduction band edge with a concentration of 1.2 ' 1016 cm%3 and a capture cross-section of 1.1 ' 10%14 cm2, making it potentially influential in determining the performance of β-Ga2O3 based power electronic and optoelectronic devices. This deep level may dominate the thermal activation of off-state drain current in β-Ga2O3 transistors at high temperatures and, together with another shallower level at 0.13 eV, may substantially lower the breakdown voltage in Schottky diodes.

UR - http://www.scopus.com/inward/record.url?scp=85053384586&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85053384586&partnerID=8YFLogxK

U2 - 10.7567/JJAP.57.091101

DO - 10.7567/JJAP.57.091101

M3 - Article

AN - SCOPUS:85053384586

VL - 57

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 9

M1 - 091101

ER -