γ- and X-state influences on resonant tunneling current in single- and double-barrier GaAs/AlAs structures

Kenneth V. Rousseau, K. L. Wang, J. N. Schulman

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31 引文 斯高帕斯(Scopus)

摘要

We have calculated the resonant tunneling current of electrons in single- and double-barrier GaAs-AlAs heterostructures in the (001) direction. A ten-band empirical tight-binding model is used in which the wave function is propagated through the structure from atom to atom using transfer matrices. We find that electrons generally follow a Γ-Γ-Γ-Γ-Γ or Γ-X-X-X-Γ path through the double-barrier devices, and present curves that show Γ resonances and X resonances as distinct peaks in the transmission coefficient. The tunneling current is calculated and the influence of the different types of resonances is discussed for a double-barrier device. The existence of resonances in the AlAs barriers suggests that negative differential resistance effects can exist in single-barrier devices.

原文English
頁(從 - 到)1341-1343
頁數3
期刊Applied Physics Letters
54
發行號14
DOIs
出版狀態Published - 1989

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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