δ-doped In0.25Ga0.75As/GaAs pseudomorphic high electron mobility transistor structures prepared by low-pressure metal organic chemical vapor deposition

C. Y. Chang, W. Lin, W. C. Hsu, T. S. Wu, S. Z. Chang, C. Wang

研究成果: Article同行評審

28 引文 斯高帕斯(Scopus)

指紋

深入研究「δ-doped In0.25Ga0.75As/GaAs pseudomorphic high electron mobility transistor structures prepared by low-pressure metal organic chemical vapor deposition」主題。共同形成了獨特的指紋。

Engineering & Materials Science

Physics & Astronomy