δ-doped In0.25Ga0.75As/GaAs pseudomorphic high electron mobility transistor structures prepared by low-pressure metal organic chemical vapor deposition
- C. Y. Chang
- , W. Lin
- , W. C. Hsu
- , T. S. Wu
- , S. Z. Chang
- , C. Wang
研究成果: Article › 同行評審
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引文
斯高帕斯（Scopus）