0.35-μm asymmetric and symmetric LDD device comparison using a reliability/speed/power methodology

Jone F. Chen, Jiang Tao, Peng Fang, Chenming Hu

研究成果: Article

12 引文 斯高帕斯(Scopus)

摘要

The reliability and performance of NMOSFET asymmetric LDD devices (with no LDD on the source side) are compared with that of conventional LDD devices. The results show that asymmetric LDD devices exhibit higher I dsat and larger I sub. To maintain the same hot-carrier lifetime, asymmetric LDD devices must operate at lower V dd. For the same hot-carrier lifetime, we show that ring oscillators with asymmetric LDD devices can achieve 5% (10% if PMOSFET also had asymmetric LDD) higher speed and 10% lower power.

原文English
頁(從 - 到)216-218
頁數3
期刊IEEE Electron Device Letters
19
發行號7
DOIs
出版狀態Published - 1998 七月 1

    指紋

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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