TY - JOUR
T1 - 1-eV InGaAsN/GaAs quantum well structure for high efficiency solar application grown by MOVPE
AU - Wu, T. H.
AU - Su, Y. K.
AU - Chuang, R. W.
AU - Huang, C. Y.
AU - Wu, H. J.
AU - Lin, Y. C.
PY - 2013/5/1
Y1 - 2013/5/1
N2 - In this article, we have demonstrated 1-eV energy band gap In 0.22GaAsNy/GaAs multi-quantum well (MQW) solar cells grown by a metal organic vapor phase epitaxy (MOVPE) system. With nitrogen incorporation, the equivalent band gap energy of quantum well structure will decrease and reach near 1 eV. The structures of In0.22GaAsN y/GaAs MQWs were inserted into an intrinsic absorption layer for absorbing the incident light in the longer wavelength region. From the measurement results, the absorption band edge of In0.22GaAsN y/GaAs MQW solar cells is extended over 1300 nm. On the other hand, in order to improve the device performance pre-deteriorated by nitrogen incorporation, a hybrid structure which consists of In0.22GaAs/GaAs and In0.22GaAsN0.043/GaAs quantum wells is adopted; with this hybrid quantum well structure as the absorption layer, consequently the short circuit current is enhanced from 10.85 to 15.29 mA/cm2.
AB - In this article, we have demonstrated 1-eV energy band gap In 0.22GaAsNy/GaAs multi-quantum well (MQW) solar cells grown by a metal organic vapor phase epitaxy (MOVPE) system. With nitrogen incorporation, the equivalent band gap energy of quantum well structure will decrease and reach near 1 eV. The structures of In0.22GaAsN y/GaAs MQWs were inserted into an intrinsic absorption layer for absorbing the incident light in the longer wavelength region. From the measurement results, the absorption band edge of In0.22GaAsN y/GaAs MQW solar cells is extended over 1300 nm. On the other hand, in order to improve the device performance pre-deteriorated by nitrogen incorporation, a hybrid structure which consists of In0.22GaAs/GaAs and In0.22GaAsN0.043/GaAs quantum wells is adopted; with this hybrid quantum well structure as the absorption layer, consequently the short circuit current is enhanced from 10.85 to 15.29 mA/cm2.
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U2 - 10.1016/j.jcrysgro.2012.07.027
DO - 10.1016/j.jcrysgro.2012.07.027
M3 - Article
AN - SCOPUS:84901622988
SN - 0022-0248
VL - 370
SP - 236
EP - 239
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
ER -