1-eV InGaAsN/GaAs quantum well structure for high efficiency solar application grown by MOVPE

T. H. Wu, Y. K. Su, R. W. Chuang, C. Y. Huang, H. J. Wu, Y. C. Lin

研究成果: Article

7 引文 斯高帕斯(Scopus)

摘要

In this article, we have demonstrated 1-eV energy band gap In 0.22GaAsNy/GaAs multi-quantum well (MQW) solar cells grown by a metal organic vapor phase epitaxy (MOVPE) system. With nitrogen incorporation, the equivalent band gap energy of quantum well structure will decrease and reach near 1 eV. The structures of In0.22GaAsN y/GaAs MQWs were inserted into an intrinsic absorption layer for absorbing the incident light in the longer wavelength region. From the measurement results, the absorption band edge of In0.22GaAsN y/GaAs MQW solar cells is extended over 1300 nm. On the other hand, in order to improve the device performance pre-deteriorated by nitrogen incorporation, a hybrid structure which consists of In0.22GaAs/GaAs and In0.22GaAsN0.043/GaAs quantum wells is adopted; with this hybrid quantum well structure as the absorption layer, consequently the short circuit current is enhanced from 10.85 to 15.29 mA/cm2.

原文English
頁(從 - 到)236-239
頁數4
期刊Journal of Crystal Growth
370
DOIs
出版狀態Published - 2013 五月 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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