1-nm-thick graphene tri-layer as the ultimate copper diffusion barrier

Ba Son Nguyen, Jen Fin Lin, Dung Ching Perng

研究成果: Article同行評審

55 引文 斯高帕斯(Scopus)

摘要

We demonstrate the thinnest ever reported Cu diffusion barrier, a 1-nm-thick graphene tri-layer. X-ray diffraction patterns and Raman spectra show that the graphene is thermally stable at up to 750 C against Cu diffusion. Transmission electron microscopy images show that there was no inter-diffusion in the Cu/graphene/Si structure. Raman analyses indicate that the graphene may have degraded into a nanocrystalline structure at 750 C. At 800 C, the perfect carbon structure was damaged, and thus the barrier failed. The results of this study suggest that graphene could be the ultimate Cu interconnect diffusion barrier.

原文English
文章編號082105
期刊Applied Physics Letters
104
發行號8
DOIs
出版狀態Published - 2014 1月 1

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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