100-μm-wide silicon-on-insulator structures by Si molecular beam epitaxy growth on porous silicon

T. L. Lin, S. C. Chen, Y. C. Kao, K. L. Wang, S. Iyer

研究成果: Article同行評審

18 引文 斯高帕斯(Scopus)

摘要

100-μm silicon-on-insulator structures have been achieved by first utilizing silicon molecular beam epitaxial (Si MBE) growth on porous silicon and subsequently oxidizing the porous silicon through the patterned Si MBE film windows. A Si beam method is used for the low-temperature surface cleaning of porous silicon prior to Si MBE growth. By using a two-step growth technique, the Si MBE film shows good crystallinity checked by Rutherford backscattering channeling spectroscopy and cross-sectional transmission electron microscopy. An electron mobility of 1300 cm2 V-1 s -1 with a doping concentration of 6×10 15 cm-3 has been achieved.

原文English
頁(從 - 到)1793-1795
頁數3
期刊Applied Physics Letters
48
發行號26
DOIs
出版狀態Published - 1986

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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